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    2SJ54 Search Results

    2SJ54 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SJ548-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -15A 95Mohm To-220Fm Visit Renesas Electronics Corporation
    2SJ540-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -12A 150Mohm To-220Ab Visit Renesas Electronics Corporation
    2SJ547-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -10A 210Mohm To-220Fm Visit Renesas Electronics Corporation
    2SJ549STL-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -12A 150Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    2SJ543-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -20A 55Mohm To-220Ab Visit Renesas Electronics Corporation
    SF Impression Pixel

    2SJ54 Price and Stock

    Rochester Electronics LLC 2SJ542-E

    MOSFET N-CH 60V 18A TO220AB
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    DigiKey 2SJ542-E Bulk 125
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    Renesas Electronics Corporation 2SJ542-E

    Trans MOSFET P-CH Si 60V 18A 3-Pin(3+Tab) TO-220AB Tube
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    Verical 2SJ542-E 1,523 139
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    Rochester Electronics 2SJ542-E 1,523 1
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    Avnet Silica 2SJ542-E 28 Weeks 6,000
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    Renesas Electronics Corporation 2SJ545-E

    2SJ545 - Power Field-Effect Transistor, 12A, 60V, P-Channel MOSFET '
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    Rochester Electronics 2SJ545-E 168 1
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    Renesas Electronics Corporation 2SJ546-E

    2SJ546 - Power Field-Effect Transistor, 15A, 60V, P-Channel MOSFET
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    Rochester Electronics 2SJ546-E 87 1
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    Renesas Electronics Corporation 2SJ542E

    SILICON P CHANNEL MOS FET Power Field-Effect Transistor, 18A I(D), 60V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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    ComSIT USA 2SJ542E 911
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    Find more 2SJ54 price and stock on Findchips.com

    2SJ54 Datasheets (62)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ54 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SJ54 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SJ540 Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF
    2SJ540 Hitachi Semiconductor Silicon P Channel MOS FET High Speed Power Switching Original PDF
    2SJ540 Renesas Technology Silicon P Channel MOS FET Original PDF
    2SJ540 Renesas Technology Silicon P Channel MOS FET High Speed Power Switching Original PDF
    2SJ540-E Renesas Technology Silicon P Channel MOS FET Original PDF
    2SJ541 Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF
    2SJ541 Hitachi Semiconductor Silicon P Channel MOS FET High Speed Power Switching Original PDF
    2SJ541 Renesas Technology FET Transistor, Silicon P Channel MOS FET High Speed Power Switching Original PDF
    2SJ541 Renesas Technology Silicon P Channel MOS FET Original PDF
    2SJ541-E Renesas Technology Silicon P Channel MOS FET Original PDF
    2SJ542 Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF
    2SJ542 Renesas Technology FET Transistor, Silicon P Channel MOS FET High Speed Power Switching Original PDF
    2SJ542 Renesas Technology Silicon P Channel MOS FET Original PDF
    2SJ542-E Renesas Technology Silicon P Channel MOS FET Original PDF
    2SJ543 Hitachi Semiconductor Silicon P Channel MOS FET High Speed Power Switching Original PDF
    2SJ543 Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF
    2SJ543 Renesas Technology Silicon P Channel MOS FET High Speed Power Switching Original PDF
    2SJ543 Renesas Technology Silicon P Channel MOS FET Original PDF

    2SJ54 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SJ544

    Abstract: DSA003643
    Text: 2SJ544 Silicon P Channel MOS FET High Speed Power Switching ADE-208-648A Z 2nd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220AB D G 1


    Original     		PDF 2SJ544 ADE-208-648A 220AB 2SJ544 DSA003643

    2SJ545

    Abstract: DSA003643 Hitachi 2SJ
    Text: 2SJ545 Silicon P Channel MOS FET High Speed Power Switching ADE-208-643A Z 2nd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.11 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline TO–220CFM D G 1 2


    Original     		PDF 2SJ545 ADE-208-643A 220CFM 2SJ545 DSA003643 Hitachi 2SJ

    Hitachi 2SJ

    Abstract: Hitachi DSA002757
    Text: 2SJ548 Silicon P Channel MOS FET High Speed Power Switching ADE-208-639A Z 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline 2SJ548 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ548 ADE-208-639A Hitachi 2SJ Hitachi DSA002757

    Hitachi DSA002751

    Abstract: Diode 10a
    Text: 2SJ543 Silicon P Channel MOS FET High Speed Power Switching ADE-208-652B Z 3rd. Edition June 1, 1998 Features • Low on-resistance R DS(on) = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220AB D


    Original     		PDF 2SJ543 ADE-208-652B 220AB D-85622 Hitachi DSA002751 Diode 10a

    Hitachi 2SJ

    Abstract: Hitachi DSA002757
    Text: 2SJ541 Silicon P Channel MOS FET High Speed Power Switching ADE-208-590B Z 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline 2SJ541 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ541 ADE-208-590B Hitachi 2SJ Hitachi DSA002757

    2SJ540

    Abstract: Hitachi DSA00337
    Text: 2SJ540 Silicon P Channel MOS FET High Speed Power Switching ADE-208-642A Z 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.11 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline TO–220AB D G 1 2


    Original     		PDF 2SJ540 ADE-208-642A 220AB 2SJ540 Hitachi DSA00337

    ADE-208-642A

    Abstract: No abstract text available
    Text: 2SJ540 Silicon P Channel MOS FET REJ03G0887-0300 Previous: ADE-208-642A Rev.3.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.11 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching


    Original     		PDF 2SJ540 REJ03G0887-0300 ADE-208-642A) PRSS0004AC-A O-220AB) ADE-208-642A

    2SJ541

    Abstract: 2SJ541-E PRSS0004AC-A
    Text: 2SJ541 Silicon P Channel MOS FET REJ03G0888-0400 Previous: ADE-208-590B Rev.4.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.


    Original     		PDF 2SJ541 REJ03G0888-0400 ADE-208-590B) PRSS0004AC-A O-220AB) 2SJ541 2SJ541-E PRSS0004AC-A

    Hitachi 2SJ

    Abstract: Hitachi DSA002757
    Text: 2SJ545 Silicon P Channel MOS FET High Speed Power Switching ADE-208-643A Z 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.11 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline 2SJ545 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ545 ADE-208-643A Hitachi 2SJ Hitachi DSA002757

    Hitachi 2SJ

    Abstract: Hitachi DSA002757
    Text: 2SJ540 Silicon P Channel MOS FET High Speed Power Switching ADE-208-642A Z 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.11 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline 2SJ540 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ540 ADE-208-642A Hitachi 2SJ Hitachi DSA002757

    2SJ543

    Abstract: Hitachi 2SJ DSA003643
    Text: 2SJ543 Silicon P Channel MOS FET High Speed Power Switching ADE-208-652B Z 3rd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220AB D G 1


    Original     		PDF 2SJ543 ADE-208-652B 220AB 2SJ543 Hitachi 2SJ DSA003643

    2SJ548

    Abstract: 2SJ548-E PRSS0003AD-A
    Text: 2SJ548 Silicon P Channel MOS FET REJ03G0895-0300 Previous: ADE-208-639A Rev.3.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.


    Original     		PDF 2SJ548 REJ03G0895-0300 ADE-208-639A) PRSS0003AD-A O-220FM) 2SJ548 2SJ548-E PRSS0003AD-A

    2SJ544

    Abstract: DSA003784 Hitachi DSA003784
    Text: 2SJ544 Silicon P Channel MOS FET High Speed Power Switching ADE-208-648A Z 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220AB D G 1


    Original     		PDF 2SJ544 ADE-208-648A 220AB 2SJ544 DSA003784 Hitachi DSA003784

    2SJ546

    Abstract: Hitachi DSA00395
    Text: 2SJ546 Silicon P Channel MOS FET High Speed Power Switching ADE-208-638A Z 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220CFM D G 1 2


    Original     		PDF 2SJ546 ADE-208-638A 220CFM 2SJ546 Hitachi DSA00395

    2SJ540

    Abstract: 2SJ540-E PRSS0004AC-A
    Text: 2SJ540 Silicon P Channel MOS FET REJ03G0887-0400 Rev.4.00 Jun 05, 2006 Description High speed power switching Features • Low on-resistance RDS on = 0.11 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching Outline RENESAS Package code: PRSS0004AC-A


    Original     		PDF 2SJ540 REJ03G0887-0400 PRSS0004AC-A O-220AB) 2SJ540 2SJ540-E PRSS0004AC-A

    2SJ546

    Abstract: 2SJ546-E PRSS0003AE-A
    Text: 2SJ546 Silicon P Channel MOS FET REJ03G0893-0300 Previous: ADE-208-638A Rev.3.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.


    Original     		PDF 2SJ546 REJ03G0893-0300 ADE-208-638A) PRSS0003AE-A O-220C 2SJ546 2SJ546-E PRSS0003AE-A

    2SJ540

    Abstract: Hitachi 2SJ DSA003643
    Text: 2SJ540 Silicon P Channel MOS FET High Speed Power Switching ADE-208-642A Z 2nd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.11 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline TO–220AB D G 1 2


    Original     		PDF 2SJ540 ADE-208-642A 220AB 2SJ540 Hitachi 2SJ DSA003643

    2SJ541

    Abstract: DSA003643
    Text: 2SJ541 Silicon P Channel MOS FET High Speed Power Switching ADE-208-590B Z 3rd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220AB D G 1


    Original     		PDF 2SJ541 ADE-208-590B 220AB 2SJ541 DSA003643

    2SJ541

    Abstract: Hitachi DSA00400 Hitachi DSA0040
    Text: 2SJ541 Silicon P Channel MOS FET High Speed Power Switching ADE-208-590B Z 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220AB D G 1


    Original     		PDF 2SJ541 ADE-208-590B 220AB 2SJ541 Hitachi DSA00400 Hitachi DSA0040

    2SJ543

    Abstract: Hitachi DSA00396
    Text: 2SJ543 Silicon P Channel MOS FET High Speed Power Switching ADE-208-652B Z 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220AB D G 1


    Original     		PDF 2SJ543 ADE-208-652B 220AB 2SJ543 Hitachi DSA00396

    2SJ547

    Abstract: Hitachi DSA00396
    Text: 2SJ547 Silicon P Channel MOS FET High Speed Power Switching ADE-208-658A Z 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.16 Ω typ. • 4 V gete drive devices • High speed switching Outline TO–220FM D G 1 2 S 1. Gate 2. Drain 3. Source


    Original     		PDF 2SJ547 ADE-208-658A 220FM 2SJ547 Hitachi DSA00396

    Hitachi DSA00280

    Abstract: No abstract text available
    Text: 2SJ542 Silicon P Channel MOS FET High Speed Power Switching ADE-208-591B Z 3rd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220AB D G 1


    Original     		PDF 2SJ542 ADE-208-591B 220AB D-85622 Hitachi DSA00280

    2SJ545

    Abstract: 2SJ545-E PRSS0003AE-A
    Text: 2SJ545 Silicon P Channel MOS FET REJ03G0892-0400 Rev.4.00 Jun 05, 2006 Description High speed power switching Features • Low on-resistance RDS on = 0.11 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching Outline RENESAS Package code: PRSS0003AE-A


    Original     		PDF 2SJ545 REJ03G0892-0400 PRSS0003AE-A O-220C 2SJ545 2SJ545-E PRSS0003AE-A

    Untitled

    Abstract: No abstract text available
    Text: 2SJ543 Silicon P Channel MOS FET High Speed Power Switching HITACHI Features • Low on-resistance Rds oii = 0.042i2 typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline T O -2 2 0 A B 1. G ate 2. Drain (Flange) 3. S ource


    OCR Scan     		PDF 2SJ543 042i2 ADE-208-652B