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irf234 n Abstract: TA17413 Text: IRF234, IRF235, IRF236, IRF237 S E M I C O N D U C T O R 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power	Original	PDF	IRF234, IRF235, IRF236, IRF237 TA17413. irf234 n TA17413
irf234 n Abstract: irf*234 n IRF236 IRF234 IRF237 IRF235 TB334 Text: IRF234, IRF235, IRF236, IRF237 Semiconductor 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power	Original	PDF	IRF234, IRF235, IRF236, IRF237 irf234 n irf*234 n IRF236 IRF234 IRF237 IRF235 TB334
Untitled Abstract: No abstract text available Text: IRF234, IRF235, IRF236, IRF237 h a r r is SEUIC0NDUCT0R 8.1 A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1 A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power	OCR Scan	PDF	IRF234, IRF235, IRF236, IRF237 1RF234, RF236, RF237
irf*234 n Abstract: TA17413 Text: IRF234, IRF235, IRF236, IRF237 h a r r is 8.1 A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1 A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power	OCR Scan	PDF	IRF234, IRF235, IRF236, IRF237 TA17413. andRF234, RF236, RF237 irf*234 n TA17413