HIGH CURRENT SMD TRANSISTOR Search Results

Contextual Info: SMD Type Type SMD Transistors IC Product specification 2SC5069 Features High current capacity. Adoption of MBIT process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

smd marking wc

Contextual Info: SMD Type Type SMD Transistors IC Product specification 2SC5214 Features High fT fT=100MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1.5A. Small package for mounting. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage

Contextual Info: SMD Type Type SMD Transistors IC Product specification 2SC5212 Features Low collector saturation voltage VCE sat =0.2V typ. High fT fT=180MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1A. Small package for mounting. Absolute Maximum Ratings Ta = 25

P1M marking code sot 223

Abstract: marking codes transistors sot-223 sot-89 marking code 5A SMD CODE SOT89 lc MARKING 5A SOT-89 sot-23 marking LC smd marking rc SOT23 SOT89 MARKING CODE 5A SMD transistors marking code 2.F AS3 SOT223
Contextual Info: 11 SMD Darlington Transistors SMD® Darlington Transistors Description Mechanical Data Philips Components Darlington transistors provide high input impedance and thus high gain by virtue of two seriesintegrated transistors on a single chip. High current versions

SMD Code 12W SOT23

Abstract: 12W SMD MARKING CODE smd 2n2907a 2n2222a SOT223 2N2222A smd 6E SMD CODE MPSA42 SMD SMD MARKING CODE 12w smd npn darlington SMD CODE SOT89 lc
Contextual Info: SMD Transistors SOT-89 Case 1.2W TYPE NO. CBCX68 CBCX69 CXT2222A CXT2907A CXT3019 CXT3904 CXT3906 CXT4033 CXT5401 CXT5551 CXTA14 CXTA42 CXTA64 CXTA92 DESCRIPTION NPN HIGH CURRENT PNP HIGH CURRENT NPN AMPL'SWITCH PNP AMPt/SWITCH NPN HIGH CURRENT NPN AM PL/SWITCH

SMD BR 17

Abstract: SMD BR 2SC3443 2SA1363 smd transistor 2A transistor smd marking SMD BR 42
Contextual Info: Transistors SMD Type High Current Drive Applications 2SA1363 Features High hFE : hFE = 150 to 800 High Collector Current IC = -2A High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3443 Absolute Maximum Ratings Ta = 25 Symbol

MARKING SMD npn TRANSISTOR 1a

Abstract: MARKING SMD NPN TRANSISTOR BR transistor smd marking cu 2SC5069 SMD TRANSISTOR 1A NPN VEBO-15V
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC5069 Features High current capacity. Adoption of MBIT process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

Contextual Info: BCU86-SMD BCU87-SMD MECHANICAL DATA Dimensions in mm NPN/PNP EPITAXIAL PLANAR SILICON TRANSISTOR 4 .5 1 .6 1 .5 FEATURES 2 .5 1 .0 4 .2 5 m a x . Ideal For High current Switching Application • LOW VCE SAT 0 .4 0 0 .4 0 • HIGH CURRENT CAPACITY AND WIDE ASO

SMD transistor code NC

Abstract: DIODE smd marking CODE WA TRANSISTOR SMD MARKING CODE transistor SMD MARKING CODE nx smd marking NX transistor smd code marking nc 2n7002 smd SMD Transistor nc TRANSISTOR SMD MARKING CODE PD smd diode 2n7002 marking code
Contextual Info: SMD Signal DMOS Transistor N-Channel 2N7002 SMD Signal DMOS Transistor (N-Channel) Features • • • • • Voltage Controlled Small Signal Switch High Density Cell Design for Low RDS(ON) Rugged and Reliable High Saturation Current Capablity RoHS Compliance

fast switching pnp transistor 3A 60V

Abstract: magnatec 1455 BCU86 BCU86-SMD BCU87 BCU87-SMD
Contextual Info: BCU86-SMD BCU87-SMD MECHANICAL DATA Dimensions in mm NPN/PNP EPITAXIAL PLANAR SILICON TRANSISTOR 4 .5 1 .6 1 .5 FEATURES 2 .5 1 .0 4 .2 5 m a x . Ideal For High current Switching Application • LOW VCE SAT 0 .4 0 0 .4 0 • HIGH CURRENT CAPACITY AND WIDE ASO

2SA1945

Abstract: marking z*d
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1945 Features High voltage VCEO=-50V High fT: fT=150MHz typ Excellent linearity of DC forward current gain High collector current Icm=600mA Small package for mounting Absolute Maximum Ratings Ta = 25 Parameter

6a smd transistor

Abstract: fzt851 npn smd 2a smd transistor 2A smd transistor MARKING 2A npn transistor smd 6a transistor marking 6A smd 6a transistor
Contextual Info: Transistors SMD Type NPN Silicon Planar High Current High Performance Transistor FZT851 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Extremely low equivalent on-resistance; RCE(sat)44mÙ at 5A. +0.1 3.00-0.1 6 Amps continuous current, up to 20 Amps peak current.

SMD 6b

Abstract: marking 6a 6B smd marking AF KC817-25 KC817-40 smd marking 6c
Contextual Info: Transistors SMD Type NPN Silicon AF Transistors KC817W Features For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit

smd transistor wc

Abstract: smd marking wd wc smd transistor smd marking wc SMD TRANSISTOR MARKING BR marking wc 2SC5214 smd transistor wc dc
Contextual Info: Transistors SMD Type Small Signal Transistor 2SC5214 Features High fT fT=100MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1.5A. Small package for mounting. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage

ABE smd

Abstract: SMD BR 2SA1947 marking abc vce 25 icm 1 hFE CLASSIFICATION Marking marking ABE
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1947 Features High fT: fT=100MHz typ Excellent linearity of DC forward current gain High collector current Icm=-1.5A Small package for mounting Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage

marking al

Abstract: 200a smd 2sA1766
Contextual Info: Transistors IC SMD Type PNP Epitaxial Planar Silicon 2SA1766 Features Adoption of FBET, MBIT processes. High DC current gain hFE=500 to 1200 . Large current capacity. Low collector-to-emitter saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25

FZT949

Abstract: smd transistor 2A 1V100
Contextual Info: Transistors SMD Type PNP Silicon Planar High Current High Performance Transistor FZT949 SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 0.1max +0.05 0.90-0.05 Extremely low equivalent on-resistance; RCE(sat). 6 Amps continuous current. +0.1 3.00-0.1 Up to 20 Amps peak current.

Contextual Info: Transistors SMD Type PNP Silicon Planar High Current High Performance Transistor FZT949 SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 0.1max +0.05 0.90-0.05 Extremely low equivalent on-resistance; RCE(sat). 6 Amps continuous current. +0.1 3.00-0.1 Up to 20 Amps peak current.

SMD BR

Abstract: 2sc3438 2sc343 2SA1368 smd b_r
Contextual Info: Transistors SMD Type High Voltage Drive Applications 2SA1368 Features High Voltage VCEO = -100V High Collector Current ICM = -800mA High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3438 Absolute Maximum Ratings Ta = 25

VEBO-15V

Abstract: 2SC4390 npn smd 2a
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4390 Features Adoption of MBIT process. High DC current gain hFE=800 to 3200 . Large current capacity (IC=2A). Low collector-to-emitter saturation voltage (VCE(sat) 0.3V). High VEBO (VEBO 15V).

Contextual Info: Transistors Transistors IC SMD SMD Type Type Product specification 2SA1411 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 High VEBO Voltage:VEBO=-10V +0.1 1.3-0.1 +0.1 2.4-0.1 Very high DC current gain:hFE=500 to 1600. 0.4 3 2 +0.1 0.95-0.1 +0.1

npn smd 2a

Abstract: FZT869
Contextual Info: Transistors SMD Type NPN Silicon Planar High Current High Performance Transistor FZT869 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 Extremely low equivalent on-resistance; RCE(sat)44mÙ at 5A. 7 Amp continuous collector current (20 Amp peak).

2SC5212

Abstract: marking ue hFE CLASSIFICATION Marking
Contextual Info: Transistors SMD Type Small Signal Transistor 2SC5212 Features Low collector saturation voltage VCE sat =0.2V typ. High fT fT=180MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1A. Small package for mounting. Absolute Maximum Ratings Ta = 25

Contextual Info: Transistors SMD Type NPN Silicon Planar High Current High Performance Transistor FZT849 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 Extremely low equivalent on-resistance; RCE(sat)36mÙ at 5A. 7 Amp continuous collector current (20 Amp peak).