2SC5212 Search Results

Contextual Info: SMD Type Type SMD Transistors IC Product specification 2SC5212 Features Low collector saturation voltage VCE sat =0.2V typ. High fT fT=180MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1A. Small package for mounting. Absolute Maximum Ratings Ta = 25

2SC5212

Abstract: marking ue hFE CLASSIFICATION Marking
Contextual Info: Transistors SMD Type Small Signal Transistor 2SC5212 Features Low collector saturation voltage VCE sat =0.2V typ. High fT fT=180MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1A. Small package for mounting. Absolute Maximum Ratings Ta = 25

marking symbol ER transistor

Abstract: "marking h" sc-62
Contextual Info: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SC5212 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2 S C 5 2 1 2 is a resin seated silicon N P N epitaxial type transistor. It designed with high collector current and small VcE sat).

marking CODE n3 6PIN

Abstract: MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7
Contextual Info: ２０１０年３月版 Sales Guide セールスガイド 小信号トランジスタダイオード/リニアIC Small Signal TransistorＤiodes / Linear IC 目次 INDEX 形名について The Type Name of the Transistor ･･･････････････････････････････ 2

2SC144

Abstract: 2SD466 2sc5266
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2SC3928A

Abstract: Transistor lss 2SC3728 2SC4357 2sc5211 8E sot-89 2SA1369 2SC5209 2sA1989
Contextual Info: # High-Density mounting equipments Continued Max. ratings Type Mo. Application Sinicftff* Vo» ¥<»o LPA 2SA1948 LVA 2SA1989 * ★ LVA 2SC3052 LVA 2SC3053 FM.RF.CON IF Si.PNP.E -25 — 120 -120 Si.PNP.E -50 -50 50 Si.NPN.E Si.NPN.E 30 50 -4 -5 -6 - 1A -100

2SC5212

Contextual Info: MITSUBISHI SEM ICONDUCTO R SM A LL-SIG N A L T RA NSISTO R 2SA1946 FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1946 is a resin sealed silicon PNP epitaxial type transistor. It is designed with high collector current and small VcE(sat).