2SC5214 Search Results

2SC5214 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SC5214		Isahaya Electronics	Transistor For Low Frequency Amplify Application Silicon Npn Epitaxial Type		Original	PDF
2SC5214		Kexin	Small Signal Transistor		Original	PDF
2SC5214		TY Semiconductor	Small Signal Transistor - SOT-89		Original	PDF
2SC5214		Unknown	Japanese Transistor Cross References (2S)		Scan	PDF

2SC5214 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5214 FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5214 is a resin sealed silicon NPN epitaxial type transistor. unit mm It designed with high collector current and 2 to 3.5W low frequency power	OCR Scan	2SC5214 2SC5214 2SA1947. SC-62	PDF
smd transistor wc Abstract: smd marking wd wc smd transistor smd marking wc SMD TRANSISTOR MARKING BR marking wc 2SC5214 smd transistor wc dc Text: Transistors SMD Type Small Signal Transistor 2SC5214 Features High fT fT=100MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1.5A. Small package for mounting. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage	Original	2SC5214 100MHz 500mA -10mA 500mA smd transistor wc smd marking wd wc smd transistor smd marking wc SMD TRANSISTOR MARKING BR marking wc 2SC5214 smd transistor wc dc	PDF
smd marking wc Abstract: No abstract text available Text: SMD Type Type SMD Transistors IC Product specification 2SC5214 Features High fT fT=100MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1.5A. Small package for mounting. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage	Original	2SC5214 100MHz 500mA -10mA 500mA smd marking wc	PDF
2SC144 Abstract: 2SD466 2sc5266 Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l\|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *	OCR Scan	T258-OMI FAX06 2SC144 2SD466 2sc5266	PDF
2SC3928A Abstract: Transistor lss 2SC3728 2SC4357 2sc5211 8E sot-89 2SA1369 2SC5209 2sA1989 Text: # High-Density mounting equipments Continued Max. ratings Type Mo. Application Sinicftff* Vo» ¥<»o LPA 2SA1948 LVA 2SA1989 * ★ LVA 2SC3052 LVA 2SC3053 FM.RF.CON IF Si.PNP.E -25 — 120 -120 Si.PNP.E -50 -50 50 Si.NPN.E Si.NPN.E 30 50 -4 -5 -6 - 1A -100	OCR Scan		PDF
S5100 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1947 FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1947 is a resin sealed silicon PNP epitaxial type transistor. It is OUTLINE DRAWING Unit mm designed with high collector current and 2 to 3.5W low frequency power amplify.	OCR Scan	2SA1947 2SA1947 2SC5214. 100MHztyp SC-62 S5100	PDF