2SA1947 Search Results

2SA1947 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SA1947		Isahaya Electronics	PNP Epitaxial Transistor		Original	PDF
2SA1947		Kexin	Silicon PNP Epitaxial		Original	PDF
2SA1947		TY Semiconductor	Silicon PNP Epitaxial - SOT-89		Original	PDF
2SA1947		Unknown	Japanese Transistor Cross References (2S)		Scan	PDF

2SA1947 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IC SMD Type Product specification 2SA1947 Features High fT: fT=100MHz typ Excellent linearity of DC forward current gain High collector current Icm=-1.5A Small package for mounting Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Symbol Rating	Original	PDF	2SA1947 100MHz -500mA -500mA -25mA -10mA
ABE smd Abstract: SMD BR 2SA1947 marking abc vce 25 icm 1 hFE CLASSIFICATION Marking marking ABE Text: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1947 Features High fT: fT=100MHz typ Excellent linearity of DC forward current gain High collector current Icm=-1.5A Small package for mounting Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage	Original	PDF	2SA1947 100MHz -500mA -500mA -25mA -10mA ABE smd SMD BR 2SA1947 marking abc vce 25 icm 1 hFE CLASSIFICATION Marking marking ABE
marking CODE n3 6PIN Abstract: MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7 Text: ２０１０年３月版 Sales Guide セールスガイド小信号トランジスタダイオード/リニアIC Small Signal TransistorＤiodes / Linear IC 目次 INDEX 形名について The Type Name of the Transistor ･･･････････････････････････････ 2	Original	PDF	2SA1235 marking CODE n3 6PIN MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7
S5100 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1947 FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1947 is a resin sealed silicon PNP epitaxial type transistor. It is OUTLINE DRAWING Unit mm designed with high collector current and 2 to 3.5W low frequency power amplify.	OCR Scan	PDF	2SA1947 2SA1947 2SC5214. 100MHztyp SC-62 S5100
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5214 FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5214 is a resin sealed silicon NPN epitaxial type transistor. unit mm It designed with high collector current and 2 to 3.5W low frequency power	OCR Scan	PDF	2SC5214 2SC5214 2SA1947. SC-62
M52777SP Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p Text: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30	OCR Scan	PDF	2SA1115 2SA1235 2SA1235A 2SA1282 2SA1282A 2SA1283 2SA1284 2SA1285 2SA1285A 2SA1286 M52777SP M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
2SC144 Abstract: 2SD466 2sc5266 Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l\|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *	OCR Scan	PDF	T258-OMI FAX06 2SC144 2SD466 2sc5266