Untitled
Abstract: No abstract text available
Text: ESMT Preliminary M12L32321A Revision History Revision 0.1 Sep. 15 2006 -Original Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2006 Revision : 0.1 1/28 ESMT Preliminary M12L32321A SDRAM 512K x 32Bit x 2Banks Synchronous DRAM FEATURES
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M12L32321A
32Bit
M12L32321A
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esmt m13s2561616a
Abstract: M13S2561616A -5T M13S2561616A
Text: ESMT M13S2561616A Operation Temperature Condition -40~85°C Revision History Revision1.0 19 Oct. 2007 - Original Revision1.1 (06 Dec. 2007) - Add BGA package Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2007 Revision : 1.1 1/49 ESMT
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M13S2561616A
esmt m13s2561616a
M13S2561616A -5T
M13S2561616A
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M13S64164A
Abstract: No abstract text available
Text: ESMT Preliminary M13S64164A Revision History Revision 0.1 23 Oct. 2006 - Original Revision 0.2 (06 Jun. 2007) - Add BGA type spec Revision 0.3 (20 Jul. 2007) - Modify BGA assignment Elite Semiconductor Memory Technology Inc. Publication Date : Jul. 2007
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M13S64164A
M13S64164A
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Untitled
Abstract: No abstract text available
Text: ESMT Preliminary M53D128168A Revision History Revision 1.0 16 Nov. 2007 - Original Revision 1.1 (02 Jan. 2008) - Change BGA package - Modify tIS Elite Semiconductor Memory Technology Inc. Publication Date : Jan. 2008 Revision : 1.1 1/46 ESMT Preliminary
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M53D128168A
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Untitled
Abstract: No abstract text available
Text: ESMT M52D32162A Revision History : Revision 1.0 Aug.16, 2006 - Original Revision 1.1 (Aug. 31,2006) -Modify VDD; VDDQ; tSAC; ICC1; ICC2PS; ICC6 spec Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2006 Revision : 1.1 1/30 ESMT M52D32162A
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M52D32162A
16Bit
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Untitled
Abstract: No abstract text available
Text: ESMT Preliminary M12L32162A Revision History Revision 0.1 Aug. 11 2006 -Original Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2006 Revision : 0.1 1/28 ESMT Preliminary M12L32162A SDRAM 1M x 16Bit x 2Banks Synchronous DRAM FEATURES z
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M12L32162A
16Bit
M12L32162
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Untitled
Abstract: No abstract text available
Text: ESMT Preliminary M12L32321A Revision History Revision 0.1 Sep. 15 2006 -Original Revision 0.2 (Dec. 05 2006) -Add -5.5 & -6BG spec Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2006 Revision : 0.2 1/28 ESMT Preliminary M12L32321A SDRAM
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M12L32321A
32Bit
M12L32321A
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M13S128324A
Abstract: No abstract text available
Text: ESMT M13S128324A Operation Temperature Condition -40~85°C Revision History Revision 1.0 Dec. 14 2007 -Original Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2007 Revision : 1.0 1/49 ESMT M13S128324A Operation Temperature Condition -40~85°C
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M13S128324A
M13S128324A
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M52S128168A
Abstract: M52S128168A-10TG
Text: ESMT Preliminary M52S128168A Revision History Revision 1.0 May. 29, 2007 -Original Elite Semiconductor Memory Technology Inc. Publication Date: May. 2007 Revision: 1.0 1/47 ESMT Preliminary M52S128168A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES
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M52S128168A
M52S128168A
M52S128168A-10TG
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Untitled
Abstract: No abstract text available
Text: ESMT Preliminary M12L128324A Revision History Revision 0.1 May. 13 2005 -Original Revision 0.2 (Aug. 08 2005) -Delete Non-Pb-free of ordering information Elite Semiconductor Memory Technology Inc. Publication Date: Aug. 2005 Revision: 0.2 1/46 ESMT SDRAM
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M12L128324A
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Untitled
Abstract: No abstract text available
Text: ESMT M13S2561616A Revision History Revision 0.1 28 Apr. 2006 - Original Revision 1.0 (07 Jun. 2006) - Delete Preliminary at ever page - Revise typing error of page1 (2Mx16 4Mx16) Elite Semiconductor Memory Technology Inc. Publication Date : Jun. 2006 Revision : 1.0
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M13S2561616A
2Mx16
4Mx16)
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esmt M12L128324A
Abstract: M12L128324A-7TGI M12L128324A-6BI
Text: ESMT M12L128324A Operation temperature condition -40°C~85°C Revision History Revision 1.0 Jan. 16 2006 -Original Revision 1.1(Feb. 14 2006) -Modify ICC2P; ICC4; ICC5 spec -Modify product no. of ordering information Elite Semiconductor Memory Technology Inc.
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M12L128324A
esmt M12L128324A
M12L128324A-7TGI
M12L128324A-6BI
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Untitled
Abstract: No abstract text available
Text: ESMT M52S64322A Revision History Revision 1.0 Jun. 07, 2007 -Original Revision 1.1 (Oct. 08, 2007) - Add -7.5 spec - Modify DC/AC characteristics Revision 1.2 (Mar. 11, 2008) - Modify ICC spec - Modify AC parameters Elite Semiconductor Memory Technology Inc.
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M52S64322A
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Untitled
Abstract: No abstract text available
Text: ESMT M24L816512DA Revision History : Revision 1.0 Jul. 4, 2007 - Original Elite Semiconductor Memory Technology Inc. Publication Date : Jul. 2007 Revision : 1.0 1/11 ESMT PSRAM M24L816512DA 8-Mbit (512K x 16) Pseudo Static RAM Features ‧Advanced low-power architecture
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M24L816512DA
M24L816512DA
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M52D128168A
Abstract: M52D128168A-10TG
Text: ESMT M52D128168A Revision History Revision 1.0 May. 29, 2007 -Original Revision 1.1 (Oct. 08, 2007) -Add Speed -7 spec. -Modify Icc spec Revision 1.2 (Nov. 16, 2007) -Modify tSAC spec Elite Semiconductor Memory Technology Inc. Publication Date: Nov. 2007
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M52D128168A
M52D128168A
M52D128168A-10TG
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M12L128168A
Abstract: M12S128168A M12S128168A-10TG
Text: ESMT M12S128168A Revision History Revision 1.0 Nov. 09, 2006 -Original Elite Semiconductor Memory Technology Inc. Publication Date: Nov. 2006 Revision: 1.0 1/44 ESMT M12S128168A 2M x 16 Bit x 4 Banks SDRAM Synchronous DRAM FEATURES ORDERING INFORMATION y
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M12S128168A
400mil
M12L128168A
M12S128168A
M12S128168A-10TG
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Untitled
Abstract: No abstract text available
Text: ESMT M13S128168A Operation temperature condition -40°C~85°C Revision History Revision 1.0 03 Jan. 2007 - Original Elite Semiconductor Memory Technology Inc. Publication Date : Jan. 2007 Revision : 1.0 1/48 ESMT M13S128168A Operation temperature condition -40°C~85°C
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M13S128168A
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M52S128168A
Abstract: M52S128168A-10TG
Text: ESMT M52S128168A Revision History Revision 1.0 May. 29, 2007 -Original Revision 1.1 (Oct. 08, 2007) -Add Speed -7 spec. -Modify Icc spec Elite Semiconductor Memory Technology Inc. Publication Date: Oct. 2007 Revision: 1.1 1/47 ESMT M52S128168A Mobile SDRAM
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M52S128168A
M52S128168A
M52S128168A-10TG
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M52D128168A
Abstract: M52D128168A-10TG
Text: ESMT Preliminary M52D128168A Revision History Revision 1.0 May. 29, 2007 -Original Elite Semiconductor Memory Technology Inc. Publication Date: May. 2007 Revision: 1.0 1/47 ESMT Preliminary M52D128168A SDRAM 2M x 16 Bit x 4 Banks Synchronous DRAM FEATURES
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M52D128168A
M52D128168A
M52D128168A-10TG
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Untitled
Abstract: No abstract text available
Text: ESMT M52S64322A Revision History Revision 1.0 Jun. 07, 2007 -Original Revision 1.1 (Oct. 08, 2007) - Add -7.5 spec - Modify DC/AC characteristics Elite Semiconductor Memory Technology Inc. Publication Date: Oct. 2007 Revision: 1.1 1/46 ESMT M52S64322A SDRAM
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M52S64322A
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Untitled
Abstract: No abstract text available
Text: ESMT Preliminary M13S128324A Revision History Revision 0.1 May. 13 2005 -Original Revision 0.2 (Aug. 08 2005) -Delete Non-Pb-free of ordering information -Modify typing error of Pin Arrangement Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2005
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M13S128324A
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Untitled
Abstract: No abstract text available
Text: ESMT M52S64164A Revision History Revision 1.0 Feb. 07, 2007 -Original Revision 1.1 (Apr. 20, 2007) - Delete BGA ball name of packing dimensions Revision 1.2 (Sep. 10, 2007) - Add -7.5 spec Elite Semiconductor Memory Technology Inc. Publication Date: Sep. 2007
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M52S64164A
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Untitled
Abstract: No abstract text available
Text: ESMT M24L16161ZA Revision History : Revision 1.0 Jul. 4, 2007 - Original Elite Semiconductor Memory Technology Inc. Publication Date : Jul. 2007 Revision : 1.0 1/15 ESMT PSRAM M24L16161ZA 16-Mbit (1M x 16) Pseudo Static RAM Features ‧Wide voltage range: 2.2V–3.6V
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M24L16161ZA
16-Mbit
48-ball
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Untitled
Abstract: No abstract text available
Text: ESMT M52D64164A Revision History Revision 1.0 Jan. 15, 2007 -Original Revision 1.1 (Mar. 02, 2007) - Delete BGA ball name of packing dimensions Revision 1.2 (Oct. 08, 2007) - Modify DC/AC characteristics Elite Semiconductor Memory Technology Inc. Publication Date: Oct. 2007
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M52D64164A
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