M52S128168A Search Results

M52S128168A Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
M52S128168A		Elite Semiconductor Memory Technology	1M x 16 Bit x 4 Banks Synchronous DRAM		Original	PDF
M52S128168A-10TG		Elite Semiconductor Memory Technology	1M x 16 Bit x 4 Banks Synchronous DRAM		Original	PDF
M52S128168A-7.5BG		Elite Semiconductor Memory Technology	1M x 16 Bit x 4 Banks Synchronous DRAM		Original	PDF
M52S128168A-7.5TG		Elite Semiconductor Memory Technology	1M x 16 Bit x 4 Banks Synchronous DRAM		Original	PDF

M52S128168A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
M52S128168A Abstract: M52S128168A-10TG Text: ESMT M52S128168A Revision History Revision 1.0 May. 29, 2007 -Original Revision 1.1 (Oct. 08, 2007) -Add Speed -7 spec. -Modify Icc spec Elite Semiconductor Memory Technology Inc. Publication Date: Oct. 2007 Revision: 1.1 1/47 ESMT M52S128168A Mobile SDRAM	Original	PDF	M52S128168A M52S128168A M52S128168A-10TG
Untitled Abstract: No abstract text available Text: ESMT M52S128168A Operation Temperature Condition -40°C~85°C Mobile SDRAM 2M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y y y ORDERING INFORMATION 2.5V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs	Original	PDF	M52S128168A M52S128168A-7TIG M52S128168A-7BIG M52S128168A-7
Untitled Abstract: No abstract text available Text: ESMT M52S128168A 2E Mobile SDRAM 2M x 16 Bit x 4 Banks Mobile Synchronous DRAM ORDERING INFORMATION FEATURES y y y y y y y y y y 2.5V power supply LVCMOS compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency (2 & 3)	Original	PDF	M52S128168A M52S128168A-5BG2E M52S128168A-6BG2E M52S128168A-7BG2E 200MHz 166MHz 143MHz
Untitled Abstract: No abstract text available Text: ESM T M52S128168A 2E Mobile SDRAM 2M x 16 Bit x 4 Banks Mobile Synchronous DRAM ORDERING INFORMATION FEATURES „ „ „ „ „ „ „ „ „ „ 2.5V power supply LVCMOS compatible with multiplexed address Four banks operation MRS cycle with address key programs	Original	PDF	M52S128168A
M52S128168A Abstract: M52S128168A-10TG Text: ESMT Preliminary M52S128168A Revision History Revision 1.0 May. 29, 2007 -Original Elite Semiconductor Memory Technology Inc. Publication Date: May. 2007 Revision: 1.0 1/47 ESMT Preliminary M52S128168A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES	Original	PDF	M52S128168A M52S128168A M52S128168A-10TG
M52S128168A Abstract: M52S128168A-10TG Text: ESMT M52S128168A Mobile SDRAM 2M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y y y ORDERING INFORMATION 2.5V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3	Original	PDF	M52S128168A M52S128168A-7TG 143MHz M52S128168A M52S128168A-10TG
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