M13S128168A Search Results
M13S128168A Price and Stock
Elite Semiconductor Memory Technology Inc M13S128168A5TG22M X 16 BIT X 4 BANKS DOUBLE DATA RATE SDRAM DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66 |
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M13S128168A5TG2 | 431 |
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Elite Semiconductor Memory Technology Inc M13S128168A5TG2N2M X 16 BIT X 4 BANKS DOUBLE DATA RATE SDRAM DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66 |
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M13S128168A5TG2N | 40 |
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Elite Semiconductor Memory Technology Inc M13S128168A-5TG2NDdr-sdram 128MB 8MX16 200MHZ |
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M13S128168A-5TG2N | 1,800 |
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M13S128168A Datasheets (10)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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M13S128168A | Elite Semiconductor Memory Technology | 2M x 16 Bit x 4 Banks Double Data Rate SDRAM | Original | |||
M13S128168A | Unknown | 2M x 16 Bit x 4 Banks Double Data Rate SDRAM | Original | |||
M13S128168A-5T | Elite Semiconductor Memory Technology | 2M x 16 Bit x 4 Banks Double Data Rate SDRAM | Original | |||
M13S128168A-5T | Elite Semiconductor Memory Technology | 2M x 16 Bit x 4 Banks Double Data Rate SDRAM | Original | |||
M13S128168A-5TG | Unknown | 2M x 16 Bit x 4 Banks Double Data Rate SDRAM | Original | |||
M13S128168A-6T | Elite Semiconductor Memory Technology | 2M x 16 Bit x 4 Banks Double Data Rate SDRAM | Original | |||
M13S128168A-6T | Elite Semiconductor Memory Technology | 2M x 16 Bit x 4 Banks Double Data Rate SDRAM | Original | |||
M13S128168A-6TG | Unknown | 2M x 16 Bit x 4 Banks Double Data Rate SDRAM | Original | |||
M13S128168A-7.5AB | Elite Memory Technology | 2M x 16 Bit x 4 Banks Double Data Rate SDRAM | Original | |||
M13S128168A-7.5AB | Elite Semiconductor Memory Technology | 2M x 16-Bit x 4 Banks Double Data Rate SDRAM | Original |
M13S128168A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: ESMT M13S128168A Operation temperature condition -40°C~85°C Revision History Revision 1.0 03 Jan. 2007 - Original Revision 1.1 (19 Mar. 2008) - Add BGA package - Modify the waveform of Power up & Initialization Sequence - Modify the θ value of TSOPII package dimension |
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M13S128168A | |
Contextual Info: ESM T M13S128168A 2N Operation Temperature Condition -40°C~85°C DDR SDRAM 2M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) |
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M13S128168A | |
Contextual Info: ESMT M13S128168A Revision History Revision 0.1 15 Jan. 2002 - Original Revision 0.2 (19 Nov. 2002) -changed ordering information & DC/AC characteristics Revision 0.1 Revision 0.2 M13S128168A - 5T M13S128168A - 6T M13S128168A - 6T M13S128168A - 7.5AB Revision 0.3 (8 Aug. 2003) |
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M13S128168A M13S128168A | |
Contextual Info: ESMT M13S128168A Revision History Revision 0.1 15 Jan. 2002 - Original Revision 0.2 (19 Nov. 2002) -changed ordering information & DC/AC characteristics Revision 0.1 Revision 0.2 M13S128168A - 5T M13S128168A - 6T M13S128168A - 6T M13S128168A - 7.5AB Revision 0.3 (8 Aug. 2003) |
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M13S128168A M13S128168A | |
Contextual Info: ESMT M13S128168A Operation temperature condition -40°C~85°C Revision History Revision 1.0 03 Jan. 2007 - Original Elite Semiconductor Memory Technology Inc. Publication Date : Jan. 2007 Revision : 1.0 1/48 ESMT M13S128168A Operation temperature condition -40°C~85°C |
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M13S128168A | |
Contextual Info: ESMT Preliminary M13S128168A Revision History Revision 0.1 15 Jan. 2002 - Original Revision 0.2 (19 Nov. 2002) -changed ordering information & DC/AC characteristics Revision 0.1 Revision 0.2 M13S128168A - 5T M13S128168A - 6T M13S128168A - 6T M13S128168A - 7.5AB |
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M13S128168A M13S128168A | |
Contextual Info: ESM T M13S128168A 2N Automotive Grade DDR SDRAM 2M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) |
Original |
M13S128168A | |
Contextual Info: ESMT M13S128168A 2N DDR SDRAM 2M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition |
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M13S128168A | |
DDR SDRAM
Abstract: M13S128168A
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M13S128168A DDR SDRAM M13S128168A | |
DDR SDRAMContextual Info: ESMT M13S128168A 2N DDR SDRAM 2M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition |
Original |
M13S128168A DDR SDRAM | |
Contextual Info: ESMT M13S128168A Revision History Revision 0.1 15 Jan. 2002 - Original Revision 0.2 (19 Nov. 2002) -changed ordering information & DC/AC characteristics Revision 0.1 Revision 0.2 M13S128168A - 5T M13S128168A - 6T M13S128168A - 6T M13S128168A - 7.5AB Revision 0.3 (8 Aug. 2003) |
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M13S128168A M13S128168A | |
Contextual Info: ESMT M13S128168A DDR SDRAM 2M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS z On-chip DLL z Differential clock inputs (CLK and CLK ) |
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M13S128168A | |
M13S128168AContextual Info: ESMT M13S128168A DDR SDRAM 2M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS z On-chip DLL z Differential clock inputs (CLK and CLK ) |
Original |
M13S128168A M13S128168A | |
Contextual Info: ESMT M13S128168A 2N DDR SDRAM 2M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition |
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M13S128168A | |
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CKE 2009
Abstract: M13S128168A
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M13S128168A CKE 2009 M13S128168A | |
Contextual Info: ESMT M13S128168A Revision History Revision 0.1 15 Jan. 2002 - Original Revision 0.2 (19 Nov. 2002) -changed ordering information & DC/AC characteristics Revision 0.1 Revision 0.2 M13S128168A - 5T M13S128168A - 6T M13S128168A - 6T M13S128168A - 7.5AB Revision 0.3 (8 Aug. 2003) |
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M13S128168A M13S128168A | |
M13S128168AContextual Info: ESMT M13S128168A Revision History Revision 0.1 15 Jan. 2002 - Original Revision 0.2 (19 Nov. 2002) -changed ordering information & DC/AC characteristics Revision 0.1 Revision 0.2 M13S128168A - 5T M13S128168A - 6T M13S128168A - 6T M13S128168A - 7.5AB Revision 0.3 (8 Aug. 2003) |
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M13S128168A M13S128168A | |
M13S128168AContextual Info: ESMT M13S128168A 2N Operation Temperature Condition -40°C~85°C DDR SDRAM 2M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) |
Original |
M13S128168A M13S128168A | |
Contextual Info: ESM T M13S128168A 2N DDR SDRAM 2M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition |
Original |
M13S128168A | |
DDR SDRAMContextual Info: ESMT M13S128168A 2N Operation Temperature Condition -40°C~85°C DDR SDRAM 2M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK ) |
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M13S128168A DDR SDRAM | |
M13S2561616A-5TG
Abstract: 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII
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256Kb 40/44L-TSOPII M11B416256A-25JP M11B416256A-35TG M11L416256SA-35JP M11L416256SA-35TG 40L-SOJ 44-40L-TSOPII 128Mb M13S2561616A-5TG 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII | |
M13L128168A-4TContextual Info: ESMT M13L128168A Revision History Revision 1.3 -Revise operation voltage. page 5 Revision 1.2 -Changed tWTR from 1 tCK to 2 tCK. Revision 1.1 -Changed absolute max. voltage (VIN, VOUT ,VDD ,VDDQ) from 3.6V to 4.0V Parameter Symbol Value Unit VIN, VOUT -0.5 ~ 4.0 |
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M13L128168A M13L128168A-3 M13L128168A-4T |