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Untitled Abstract: No abstract text available Text: ESMT Preliminary M53D128168A Revision History Revision 1.0 16 Nov. 2007 - Original Elite Semiconductor Memory Technology Inc. Publication Date : Nov. 2007 Revision : 1.0 1/47 ESMT Preliminary M53D128168A Mobile DDR SDRAM 2M x 16 Bit x 4 Banks Mobile DDR SDRAM	Original	PDF	M53D128168A M53D128168A
Untitled Abstract: No abstract text available Text: ESMT M53D128168A 2E Operation Temperature Condition -40°C~85°C Mobile DDR SDRAM 2M x16 Bit x 4 Banks Mobile DDR SDRAM Features z z z z z z z z z z JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS)	Original	PDF	M53D128168A
Untitled Abstract: No abstract text available Text: ESMT M53D128168A 2E Mobile DDR SDRAM 2M x16 Bit x 4 Banks Mobile DDR SDRAM Features z z z z z z z z z z JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS) No DLL; CLK to DQS is not synchronized.	Original	PDF	M53D128168A
M53D128168A Abstract: No abstract text available Text: ESMT M53D128168A Operation Temperature Condition -40°C~85°C Mobile DDR SDRAM 2M x 16 Bit x 4 Banks Mobile DDR SDRAM Features z z z z z z z z z z JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe DQS	Original	PDF	M53D128168A M53D128168A
Untitled Abstract: No abstract text available Text: ESM T M53D128168A 2E Mobile DDR SDRAM 2M x16 Bit x 4 Banks Mobile DDR SDRAM Features All inputs except data & DM are sampled at the rising edge of the system clock(CLK) DQS is edge-aligned with data for READ; center-aligned with data for WRITE Data mask (DM) for write masking only	Original	PDF	M53D128168A
Untitled Abstract: No abstract text available Text: ESM T M53D128168A 2E Operation Temperature Condition -40 C~85 C Mobile DDR SDRAM 2M x16 Bit x 4 Banks Mobile DDR SDRAM Features All inputs except data & DM are sampled at the rising edge of the system clock(CLK) DQS is edge-aligned with data for READ; center-aligned	Original	PDF	M53D128168A
M53D128168A Abstract: MAKING A10 BGA Text: ESMT Preliminary M53D128168A Mobile DDR SDRAM 2M x 16 Bit x 4 Banks Mobile DDR SDRAM Features z z z z z z z z z z JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe DQS No DLL; CLK to DQS is not synchronized.	Original	PDF	M53D128168A M53D128168A MAKING A10 BGA
Untitled Abstract: No abstract text available Text: ESMT Preliminary M53D128168A Revision History Revision 1.0 16 Nov. 2007 - Original Revision 1.1 (02 Jan. 2008) - Change BGA package - Modify tIS Revision 1.2 (16 Jan. 2008) - Add 8x10mm BGA package Elite Semiconductor Memory Technology Inc. Publication Date : Jan. 2008	Original	PDF	8x10mm M53D128168A M53D128168A
Untitled Abstract: No abstract text available Text: ESMT Preliminary M53D128168A Revision History Revision 1.0 16 Nov. 2007 - Original Revision 1.1 (02 Jan. 2008) - Change BGA package - Modify tIS Elite Semiconductor Memory Technology Inc. Publication Date : Jan. 2008 Revision : 1.1 1/46 ESMT Preliminary	Original	PDF	M53D128168A