E153432 Search Results

35N120D1

Abstract: D-68623 IXER 35N120D1
Contextual Info: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C

TO247AD

Abstract: TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247
Contextual Info: IXKR 40N60C CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ D G Preliminary data S ISOPLUS 247TM E153432 MOSFET Conditions

DSEC29

Abstract: DSEC 29 DSEC
Contextual Info: HiPerFREDTM Epitaxial Diode DSEA 59-06BC DSEC 59-06BC = 2x30 A = 600 V = 35 ns IFAV VRRM trr ISOPLUS220TM Electrically Isolated Back Surface DSEA Preliminary Data Sheet VRSM VRRM V V 600 600 ISOPLUS220TM E153432 Type 1 DSEC 2 3 2 3 DSEA 59-06BC DSEC 59-06BC

IXGN400N60B3

Contextual Info: Preliminary Technical Information IXGN400N60B3 GenX3TM 600V IGBT VCES = 600V IC25 = 430A VCE sat ≤ 1.40V Medium-Speed Low-Vsat PT IGBT for 5-40 kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600

Mosfet 75V 120A

Abstract: Power Mosfet 75V 120A IXFN240N15T2
Contextual Info: Advance Technical Information IXFN240N15T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 150V 240A Ω 5.2mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions

IXFN520N075T2

Contextual Info: Preliminary Technical Information IXFN520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 75V 480A Ω 1.9mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions VDSS TJ = 25°C to 175°C

IXGN320N60A3

Contextual Info: IXGN320N60A3 GenX3TM 600V IGBT VCES = 600V IC25 = 320A VCE sat ≤ 1.25V Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

IXFN320N17T2

Abstract: ixfn320n 320N17T2
Contextual Info: Advance Technical Information IXFN320N17T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 170V 260A Ω 5.2mΩ 150ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions

ixfn420n10t

Abstract: 420N10T 420N1 MOSFET 60V 210A F420 IXFN SOT227 DS100199 123B16
Contextual Info: Advance Technical Information IXFN420N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 420A Ω 2.3mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions

IXGN200N60B3

Abstract: 9V DC INPUT and gate ic 200N60B3 IGBT 100V 100A igbt 100a 150v SOT227B 123B16
Contextual Info: IXGN200N60B3 GenX3TM 600V IGBT VCES = 600V IC110 = 200A VCE sat ≤ 1.50V Medium-Speed Low-Vsat PT IGBT for 5-40kHz Switching SOT-227B, miniBLOC E153432 Ec Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

IXGJ50N60C4D1

Abstract: G50N60
Contextual Info: Preliminary Technical Information High-Gain IGBT w/ Diode IXGJ50N60C4D1 VCES = 600V IC110 = 21A VCE sat ≤ 2.50V (Electrically Isolated Tab) High-Speed PT Trench IGBT ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

IXTN17N120L

Contextual Info: Advance Technical Information Linear Power MOSFET With Extended FBSOA IXTN17N120L VDSS ID25 D N-Channel Enhancement Mode Avalanche Rated = 1200V = 17A Ω ≤ 990mΩ RDS on G S S miniBLOC, SOT-227 B (IXTN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C

Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT IXGN120N60A3 IXGN120N60A3D1 VCES = 600V IC110 = 120A VCE sat ≤ 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching D1 E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

94N50

Contextual Info: Advance Technical Information IXFN94N50P2 PolarP2TM HiPerFETTM Power MOSFET VDSS ID25 = = 500V 68A  55m 250ns RDS on   trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC E153432 S Symbol Test Conditions Maximum Ratings

Contextual Info: XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65B4H1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = IC110 = VCE sat  tfi(typ) = 650V 110A 2.1V 85ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

Contextual Info: Advance Technical Information IXFN520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 75V 455A Ω 1.65mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions VDSS TJ = 25°C to 175°C

80N60

Contextual Info: Advance Technical Information IXFR80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = ≤ ≤ 600V 48A Ω 76mΩ 250ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

IXFN44N80Q3

Contextual Info: Preliminary Technical Information IXFN44N80Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated = = ≤ ≤ 800V 37A Ω 190mΩ 300ns miniBLOC E153432 S Symbol Test Conditions Maximum Ratings

IXXN100N60B3H1

Contextual Info: Advance Technical Information IXXN100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C

Contextual Info: Advance Technical Information IXTJ6N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 3A 3.85Ω RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings

IXFN62N80Q3

Abstract: sot 123
Contextual Info: Advance Technical Information IXFN62N80Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr = = ≤ ≤ 800V 49A Ω 140mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: HiPerFETTM Power MOSFET IXFN 70N60Q2 VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr = 600 V = 70 A ≤ 80 mΩ Ω ≤ 250 ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings

Contextual Info: Advance Technical Information IXFN44N80Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr = = ≤ ≤ 800V 37A Ω 190mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

IXTR68P20T

Abstract: DS100375 DS-100-375
Contextual Info: Advance Technical Information IXTR68P20T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ - 200V - 44A Ω 64mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ