Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    G50N60 Search Results

    SF Impression Pixel

    G50N60 Price and Stock

    Rochester Electronics LLC NGTG50N60FWG

    IGBT TRENCH 600V 100A TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NGTG50N60FWG Tube 105
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.88
    • 10000 $2.88
    		Buy Now

    onsemi NGTG50N60FWG

    IGBT 600V 100A 223W TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NGTG50N60FWG Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Rochester Electronics NGTG50N60FWG 4,257 1
    • 1 $2.77
    • 10 $2.77
    • 100 $2.6
    • 1000 $2.35
    • 10000 $2.35
    		Buy Now

    onsemi NGTG50N60FLWG

    IGBT 600V 50A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NGTG50N60FLWG Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Rochester Electronics NGTG50N60FLWG 4,363 1
    • 1 $2.89
    • 10 $2.89
    • 100 $2.72
    • 1000 $2.46
    • 10000 $2.46
    		Buy Now

    Rochester Electronics LLC NGTG50N60FLWG

    IGBT TRENCH 600V 100A TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NGTG50N60FLWG Tube 100
    • 1 -
    • 10 -
    • 100 $3.01
    • 1000 $3.01
    • 10000 $3.01
    		Buy Now

    G50N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G50N60HS

    Abstract: G50N60 G50N60*HS SGW50N60HS SGW50N60HS equivalent 207E-04 g50n SGW50N60 200nC IDP45E60
    Text: SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGW50N60HS PG-TO-247-3-21 Eoff25 G50N60HS G50N60HS G50N60 G50N60*HS SGW50N60HS SGW50N60HS equivalent 207E-04 g50n SGW50N60 200nC IDP45E60

    G50N60

    Abstract: g50n60hs G50N60*HS SGW50N60HS g50n60h IDP45E60 PG-TO-247-3 SGW50N60HS equivalent SGW50N60
    Text: SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGW50N60HS PG-TO-247-3 Eoff25 G50N60HS G50N60 g50n60hs G50N60*HS SGW50N60HS g50n60h IDP45E60 PG-TO-247-3 SGW50N60HS equivalent SGW50N60

    G50N60*HS

    Abstract: g50n60hs 200nC Eoff25 G50N60 SGW50N60HS
    Text: SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGW50N60HS Eoff25 PG-TO-247-3-21 SGW50N60HS 100stances. G50N60*HS g50n60hs 200nC G50N60

    G50N60

    Abstract: G50N60F NGTG50N60FWG g50n NGTB50N60FWG
    Text: G50N60FWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.


    Original     		PDF NGTG50N60FWG NGTG50N60FWD G50N60 G50N60F g50n NGTB50N60FWG

    G50N60

    Abstract: 50n60 50N6 IXGH50N60A IXGH50N60AS g50n 50N60A g50n60 application DSA002033
    Text: HiPerFASTTM IGBT IXGH50N60A VCES IXGH50N60AS IC25 VCE sat tfi Surface Mountable Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 75 A I C90 TC = 90°C


    Original     		PDF IXGH50N60A IXGH50N60AS O-247 50N60AS) G50N60 50n60 50N6 IXGH50N60A g50n 50N60A g50n60 application DSA002033

    G50N60HS

    Abstract: G50N60 G50N60*HS SGW50N60HS IDP45E60 PG-TO-247-3 207E-04 SGW50N60HS equivalent
    Text: SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGW50N60HS PG-TO-247-3 Eoff25 G50N60HS G50N60HS G50N60 G50N60*HS SGW50N60HS IDP45E60 PG-TO-247-3 207E-04 SGW50N60HS equivalent

    g50n60hs

    Abstract: G50N60 G50N60*HS SGW50N60HS g50n60h SGW50N60HS equivalent G50N60hs IGBT 207E-04 SGW50N60 PG-TO247-3
    Text: o SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGW50N60HS Eoff25 PG-TO-247-3-1 SGW50N60HS 100substances. g50n60hs G50N60 G50N60*HS g50n60h SGW50N60HS equivalent G50N60hs IGBT 207E-04 SGW50N60 PG-TO247-3

    G50N60FL

    Abstract: G50N60F G50N60 NGTB50N60FLWG NGTG50N60FLWG solar inverters circuit diagram
    Text: G50N60FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.


    Original     		PDF NGTG50N60FLWG 100ble NGTG50N60FLW/D G50N60FL G50N60F G50N60 NGTB50N60FLWG solar inverters circuit diagram