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    IXGN320N60A3 Search Results

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    IXGN320N60A3 Price and Stock

    IXYS Corporation IXGN320N60A3

    IGBT MOD 600V 320A 735W SOT227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGN320N60A3 Tube 1,665 1
    • 1 $39.08
    • 10 $30.151
    • 100 $39.08
    • 1000 $39.08
    • 10000 $39.08
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    Mouser Electronics IXGN320N60A3 101
    • 1 $37.06
    • 10 $30.15
    • 100 $29.86
    • 1000 $29.86
    • 10000 $29.86
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    Future Electronics IXGN320N60A3 Tube 280 40 Weeks 10
    • 1 -
    • 10 $28.7
    • 100 $28.28
    • 1000 $27.92
    • 10000 $27.92
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    IXGN320N60A3 Tube 40 Weeks 300
    • 1 -
    • 10 $30.1
    • 100 $29.66
    • 1000 $29.28
    • 10000 $29.28
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    TTI IXGN320N60A3 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $39.82
    • 10000 $39.82
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    TME IXGN320N60A3 1
    • 1 $38.39
    • 10 $30.42
    • 100 $30.42
    • 1000 $30.42
    • 10000 $30.42
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    ComSIT USA IXGN320N60A3 134
    • 1 -
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    New Advantage Corporation IXGN320N60A3 210 1
    • 1 -
    • 10 $33.39
    • 100 $33.39
    • 1000 $33.39
    • 10000 $33.39
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    Littelfuse Inc IXGN320N60A3

    Transistor, Igbt, 600V, 320A, Sot-227B; Continuous Collector Current:320A; Collector Emitter Saturation Voltage:1.46V; Power Dissipation:735W; Operating Temperature Max:150°C; Igbt Termination:Tab; Collector Emitter Voltage Max:600V Rohs Compliant: Yes |Littelfuse IXGN320N60A3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXGN320N60A3 Bulk 121 1
    • 1 $33.84
    • 10 $31.44
    • 100 $31.44
    • 1000 $31.44
    • 10000 $31.44
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    IXGN320N60A3 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGN320N60A3 IXYS IGBTs - Modules, Discrete Semiconductor Products, IGBT 600V SOT-227B Original PDF

    IXGN320N60A3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXGN320N60A3

    Abstract: No abstract text available
    Text: IXGN320N60A3 GenX3TM 600V IGBT VCES = 600V IC25 = 320A VCE sat ≤ 1.25V Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGN320N60A3 OT-227B, E153432 IC110 320N60A3 3-08-A IXGN320N60A3

    Untitled

    Abstract: No abstract text available
    Text: VCES = 600V IC25 = 320A VCE sat ≤ 1.25V IXGN320N60A3 GenX3TM 600V IGBT Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGN320N60A3 OT-227B, E153432 IC110 320N60A3 3-08-A

    Untitled

    Abstract: No abstract text available
    Text: IXGN320N60A3 GenX3TM 600V IGBT VCES = 600V IC25 = 320A VCE sat ≤ 1.25V Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGN320N60A3 OT-227B, E153432 IC110 320N60A3 3-08-A

    320N60A3

    Abstract: IXGN320N60A3 IXGN400N60A3
    Text: IXGN320N60A3 GenX3TM 600V IGBT VCES = 600V IC25 = 320A VCE sat ≤ 1.25V Ultra Low Vsat PT IGBT for up to 5kHz switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGN320N60A3 OT-227B, E153432 IC110 320N60A3 3-08-A IXGN320N60A3 IXGN400N60A3

    Untitled

    Abstract: No abstract text available
    Text: IXGN320N60A3 GenX3TM 600V IGBT VCES = 600V IC110 = 170A VCE sat  1.30V Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M


    Original     		PDF IXGN320N60A3 IC110 OT-227B, E153432 320N60A3 3-08-A

    IXGN320N60A3

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXGN 320N60A3 PolarHVTM IGBT VCES = 600 V IC25 = 320 A VCE sat ≤ 1.25 V Optimized for Switching up to 5 kHz Preliminary Data Sheet E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 320N60A3 IC110 OT-227B, 320N60A3_ IXGN320N60A3

    Inverter Welder

    Abstract: inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter
    Text: IXYS POWER Efficiency through Technology NEW 600V GenX3 IGBTs PRO D UC T next generation 600V IGBTs for power conversion applications january 2009 OVERVIEW IXYS extends its GenX3TM insulated gate bipolar transistor IGBT product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM


    Original     		PDF PB60IGBTA3B3C3 Inverter Welder inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter