ZVP3306 Search Results

ZVN3306F

Abstract: ZVP3306* datasheet GS 393 ZVP3306F DSA003736 3tf5
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN3306F ISSUE 3 – JANUARY 1996 FEATURES * RDS on = 5Ω * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL - S D ZVP3306F MC G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage

Contextual Info: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP3306F ISSUE 3 - JANUARY 1996 FE A TU R E S ♦ 60 V o lt V DS * fW r^ a mi P A R T M A R K IN G D E TA IL - M L H C O M P L E M E N T A R Y TYPE - Z V N 3 3 0 6 F O g SOT23 ABSOLUTE MAXIMUM RATINGS. P A R A M ETER

w2s sot23

Abstract: ML SOT23 FET SOT23 60V ZVN3306F ZVP3306F
Contextual Info: SOT23 P-CHANNEL ENHANCEMENT ZVP3306F MODE VERTICAL DMOS FET ISSUE 3- JANUARY I L 1996 FEATURES . 60 Volt Vr>s . Ro;, ,=14 2 s D PARTMA13KING DETAIL COMPLEMENTARY - ML G TYPE - ZVN3306F SOT23 ABSOLUTE MAXIMUM _ RATINGS. PARAMETER [Drain — Sc, urce (;ontl~luuus

Contextual Info: ZVP3306B Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)60Í I(D) Max. (A)400m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)5.0 Minimum Operating Temp (øC)

to92 fet

Abstract: ZVP3306A to92 fet p channel DSA003787 ZVP3306
Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP3306A TYPICAL CHARACTERISTICS -1.2 VGS=-20V -14V -0.8 -12V -10V -0.6 -9V -8V -0.4 -7V -6V -5V -0.2 -4V -14V -10 -20 -30 -40 -0.6 -10V -0.4 -9V -8V -7V -0.2 VDS - Drain Source Voltage Volts -8 ID= -6 -400mA

ZVP3306A

Abstract: ZVP330 T092 TAM-250
Contextual Info: P-CHANNEL ENHANCEMENT ZVP3306A MODE VERTICAL DMOS FET ISSUE 2- I MARCH 94 FEATURES * 60 Volt VD~ *R DS cm =14Q D F Gs E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage ‘DS -60 v Continuous Drain Current at Tam~25°C ID

zvp3306f

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996_ ZVN3306F _ FEATURES * R D S o n r 5 Q * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL • ZVP3306F G MC SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage

ZVP3306F

Abstract: ZVP3310F DS400
Contextual Info: ZVP3306F SOT23 P CHANNEL ENHANCEMENT MODE VERTICAL DM O S FET PARTM ARK1NG DETA IL - ZVP3306F - M L ABSOLUTE M A X IM U M RATINGS PARAMETER SY M B O L Drain-Source Voltage Continuous Drain Current @ Tamb=25'C Pulsed Drain Current Gate-Source Voltage M ax Power Dissipation @ Tamb=25"C

5b4 sot23-6

Contextual Info: bOE ]> • ^70578 0007^37 bEfl ZETEX SEMICONDUCTORS P-channel enhancement mode vertical DMOS FET ZVP3306 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance • Low current drive

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSU E 3 - JANUARY 1996_ FEATU RES * * R DS on = 5 ii 60 V olt V DS C O M P LEM EN T A R Y TYPE - ZVP3306F P A R T M A R K IN G D E T A IL - MC SOT23 ABSOLUTE MAXIMUM RATINGS. SYM BO L

ZVP3306F

Contextual Info: PLESSEY S EM IC ON D/ D I SC R E T E □3 DE~p 722D533 □00b7bb fl 7 ~ - * 2 7 -^ 2 0 - P-channe! enhancement mode vertical DMOS FET ZVP3306F , ABSOLUTE M AXIM UM RATINGS Parameter Symbol Drain-source voltage SOT-23 -6 0 V -0 .0 9 A Idm -1 .6 A v gs ±20

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN3306F ISSUE 3 – JANUARY 1996 FEATURES * RDS on = 5Ω * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL - S D ZVP3306F MC G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage

Contextual Info: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ZVP3306F ISSUE 3 -JAN UARY 1996 FEATURES * 60 V o lt Vos * Rosionr1^ s PARTM ARKING DETAIL - M L g CO M PLEM ENTAR Y TYPE - ZVN3306F SOT23 ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L D ra in -S o u rc e V o lta g e

Contextual Info: ZVP3306A Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)60Í I(D) Max. (A)160m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)625m Minimum Operating Temp (øC)

FET SOT23 60V

Abstract: ML SOT23 ZVP3306F ZVN3306F DSA0037409
Contextual Info: ZVP3306F TYPICAL CHARACTERISTICS -4 -2 -200mA -100mA V Drain Source -6 -2 -4 -6 -8 I - Drain Current Amps ID= -400mA -8 -0.8 -12V -0.6 f=1MHz Ciss 20 Coss 10 Crss 5 / V -10 -20 -30 -40 -50 -60 1 -8 -10 Note:ID=- 0.2A VDS= -20V-40V -60V -4 -6 -8 -10 -12 -14

Contextual Info: ZVP3306E Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)1.6 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)850m Minimum Operating Temp (øC)-55õ

2106a

Abstract: BST72A CROSS 0545N2 vn1720m ZVN2106A ZVN3306A MPF910 zetex zvp2120a VP0545N2 2N7019
Contextual Info: CROSS R EF ER E N C E LIST Industry Part No. Zetex Suggested Replacem ent 2N 6659 2N 6660 2N6661 ZVN2106B ZVN2106B ZVN2110B 2N 7000 2N7001 2N7002 2N7007 2N 7008 2N 7019 2N 7025 2N 7000 ZVN3320F 2N 7002 ZVN3320A ZVN3306A ZVP3306F ZVP2106A BS107 BS107A BS108

Contextual Info: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET GS -1.0 -10 -8 -6 -0.6 -4 -0.4 ISSUE 3 – JANUARY 1996 FEATURES * 60 Volt VDS * RDS on =14Ω D S PARTMARKING DETAIL – ML COMPLEMENTARY TYPE – ZVN3306F -0.8 D= ZVP3306F G SOT23 ABSOLUTE MAXIMUM RATINGS.

Contextual Info: ZVP3306F Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)90m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)1.6 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)330m Minimum Operating Temp (øC)-55

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -JANUARY 1996_ FEATURES * ^ D S I o n F 5 i2 * 60 V o lt V DS C O M PLEM ENTAR Y TYPE • ZVP3306F PAR TM ARKING DETAIL - MC G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M BO L

Contextual Info: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -JANUARY 1996 ZVP3306F _ _ FEATURES * 60 V olt V DS * R DS on = 1 4 f l PARTMARKING DETAIL - ML COMPLEMENTARY TYPE - ZVN3306F SOT23 ABSOLUTE MAXIMUM RATINGS. SYMBOL Drain-Source Voltage

Contextual Info: Using the TPS2410EVM User's Guide Literature Number: SLVU181A October 2006 – Revised February 2012 User's Guide SLVU181A – October 2006 – Revised February 2012 TPS2410 EVM HPA204 This user's guide is to facilitate operation of the TPS2410 and TPS2411 evaluation module. It is used by

Contextual Info: User's Guide SLUU210A – January 2005 – Revised October 2013 bq27200 Single Cell Battery Fuel Gauge Evaluation Module The bq27200EVM is a complete evaluation system for the bq27200 single cell Li-Ion and Li-Polymer battery gas gauge device. 1 2 3 4 5 6

Contextual Info: bq2058 Lithium Ion Pack Supervisor for 3- and 4-Cell Packs Features General Description ➤ Protects and individually monitors three or four Li-Ion series cells for overvoltage, undervoltage The bq2058 Lithium Ion Pack Supervisor is designed to control the charge