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onsemi BS107AG MOSFET N-CH 200V 250MA TO92-3
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onsemi BS107ARL1 MOSFET N-CH 200V 250MA TO92-3
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DigiKey	BS107ARL1	Reel			4,000	1 - 10 - 100 - 1000 - 10000 $0.12093	Buy Now
onsemi BS107ARL1G MOSFET N-CH 200V 250MA TO92-3
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DigiKey	BS107ARL1G	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
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Newark	BS107ARL1G	Cut Tape			4,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
	BS107ARL1G	Reel			4,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Others BS107AG AVAILABLE EU
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ComSIT USA	BS107AG		30,950			1 - 10 - 100 - 1000 - 10000 -	Get Quote

BS107A Datasheets (30)

Part	Manufacturer	Description	Datasheet Type	PDF
BS107A	Motorola	TMOS Switching(N-Channel-Enhancement)	Original	PDF
BS107A	On Semiconductor	TRANS MOSFET N-CH 200V 0.25A 3TO-92 BOX	Original	PDF
BS107A	On Semiconductor	Small Signal MOSFET 250 mAmps, 200 Volts	Original	PDF
BS107A	Philips Semiconductors	N-Channel Enhancement Mode Vertical D-MOS Transistor	Original	PDF
BS107A	Philips Semiconductors	N-Channel Enhancement Mode Vertical D-MOS Transistor	Original	PDF
BS107A	Motorola	European Master Selection Guide 1986	Scan	PDF
BS107A	Motorola	Switchmode Datasheet	Scan	PDF
BS107A	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
BS107A	Unknown	FET Data Book	Scan	PDF
BS107A	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
BS107A	On Semiconductor	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, MOSFET, N Channel, .25A, 200V, Pkg Style TO92	Scan	PDF
BS107AG	On Semiconductor	Small Signal MOSFET 250 mAmps, 200 Volts	Original	PDF
BS107AG	On Semiconductor	Small Signal MOSFET 250 mAmps, 200 Volts; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Bulk; Qty per Container: 1000	Original	PDF
BS107AMO	Philips Semiconductors	Transistor Mosfet N-CH 200V 0.15A 3TO-92 AMMOPACK	Original	PDF

BS107AMO	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
BS107ARL	On Semiconductor	BS107 - TRANSISTOR 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, TO-226AA, 3 PIN, FET General Purpose Small Signal	Original	PDF
BS107ARL1	On Semiconductor	Small Signal MOSFET 250 mA, 200 V N-Channel TO-92	Original	PDF
BS107ARL1	On Semiconductor	Small Signal MOSFET 250 mAmps, 200 Volts; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Tape and Reel; Qty per Container: 2000	Original	PDF
BS107ARL1G	On Semiconductor	Small Signal MOSFET 250 mAmps, 200 Volts; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Tape and Ammunition Box; Qty per Container: 2000	Original	PDF
BS107ARL1G	On Semiconductor	Small Signal MOSFET 250 mAmps, 200 Volts	Original	PDF

BS107A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BS107 Abstract: BS107A BS107AG BS107ARL1 BS107ARLRM BS107ARLRP BS107G BS107RL1 BS107RLRA Text: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Package is Available* 250 mA, 200 V RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A) N−Channel MAXIMUM RATINGS Rating Drain −Source Voltage	Original	PDF	BS107, BS107A BS107) BS107A) BS107/D BS107 BS107A BS107AG BS107ARL1 BS107ARLRM BS107ARLRP BS107G BS107RL1 BS107RLRA
BS107A equivalent Abstract: BS107 "direct replacement" BC237 BS107 BC108 characteristic Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching N–Channel — Enhancement BS107 BS107A 1 DRAIN 2 GATE  3 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit VDS 200 Vdc VGS VGSM ± 20 ± 30 ID IDM 250 500 PD 350 mW TJ, Tstg – 55 to 150 °C Drain – Source Voltage	Original	PDF	BS107 BS107A 226AA) Source218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BS107A equivalent BS107 "direct replacement" BC237 BC108 characteristic
BC107 characteristic Abstract: BC107 to92 BS107 BC107 to-92 Text: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Package is Available* 250 mA, 200 V RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A) N−Channel MAXIMUM RATINGS Rating Drain −Source Voltage	Original	PDF	BS107, BS107A BS107) BS107A) BS107/D BC107 characteristic BC107 to92 BS107 BC107 to-92
Untitled Abstract: No abstract text available Text: BS107A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)250m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)600m Minimum Operating Temp (øC)	Original	PDF	BS107A
BP317 Abstract: BS107A MBB692 Text: DISCRETE SEMICONDUCTORS DATA SHEET BS107A N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor	Original	PDF	BS107A SC13b SCA54 137107/00/01/pp8 BP317 BS107A MBB692
BS107 Abstract: BS107 application BS107A BS107ARL1 BS107ARLRM BS107ARLRP BS107RL1 BS107RLRA Text: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N–Channel TO–92 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage – Continuous – Non–repetitive tp ≤ 50 µs Drain Current Continuous (Note 1.) Pulsed (Note 2.)	Original	PDF	BS107, BS107A BS107) BS107A) r14525 BS107/D BS107 BS107 application BS107A BS107ARL1 BS107ARLRM BS107ARLRP BS107RL1 BS107RLRA
BS107 Abstract: BS107G BS107AG BS107A BS107ARL1 BS107ARL1G mosfet to92 Text: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 Features •ăAEC Qualified •ăPPAP Capable •ăPb-Free Package is Available* 250 mAMPS, 200 VOLTS RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A) Rating Drainā-āSource Voltage	Original	PDF	BS107, BS107A BS107) BS107A) BS107/D BS107 BS107G BS107AG BS107A BS107ARL1 BS107ARL1G mosfet to92
Untitled Abstract: No abstract text available Text: BS107A Small Signal MOSFET 250 mA, 200 V, N−Channel TO−92 Features • AEC−Q101 Qualified and PPAP Capable • This is a Pb−Free Device* http://onsemi.com 250 mAMPS, 200 VOLTS RDS on = 6.4 W MAXIMUM RATINGS Rating Drain −Source Voltage Gate−Source Voltage	Original	PDF	BS107A BS107/D
Untitled Abstract: No abstract text available Text: BS107A Small Signal MOSFET 250 mAmps, 200 Volts N−Channel TO−92 Features http://onsemi.com • AEC Qualified • PPAP Capable • This is a Pb−Free Device* 250 mAMPS, 200 VOLTS RDS on = 6.4 W N−Channel D MAXIMUM RATINGS Rating Drain −Source Voltage	Original	PDF	BS107A BS107/D
BS107 Abstract: BS107A BS107ARL1G Text: BS107A Small Signal MOSFET 250 mAmps, 200 Volts N−Channel TO−92 Features http://onsemi.com • AEC Qualified • PPAP Capable • This is a Pb−Free Device* 250 mAMPS, 200 VOLTS RDS on = 6.4 W N−Channel D MAXIMUM RATINGS Rating Drain −Source Voltage	Original	PDF	BS107A BS107/D BS107 BS107A BS107ARL1G
BS107 MOTOROLA Abstract: BS107A BS107 Text: MOTOROLA Order this document by BS107/D SEMICONDUCTOR TECHNICAL DATA TMOS Switching N–Channel — Enhancement BS107 BS107A 1 DRAIN 2 GATE  3 SOURCE MAXIMUM RATINGS Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs	Original	PDF	BS107/D BS107 BS107A 226AA) BS107 MOTOROLA BS107A BS107
BS107 Abstract: PPAP MANUAL BS107AG BS107A BS107ARL1 BS107ARL1G BS107G Text: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 http://onsemi.com Features •ăAEC Qualified •ăPPAP Capable •ăPb-Free Package is Available* 250 mAMPS, 200 VOLTS RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A)	Original	PDF	BS107, BS107A BS107) BS107A) BS107/D BS107 PPAP MANUAL BS107AG BS107A BS107ARL1 BS107ARL1G BS107G
BC107 to92 Abstract: BC107 characteristic bs107 BC107 to-92 Text: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Package is Available* 250 mA, 200 V RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A) N−Channel MAXIMUM RATINGS Rating Drain −Source Voltage	Original	PDF	BS107, BS107A BS107) BS107A) BS107 BS107G BS107RLRA BS107RL1 BC107 to92 BC107 characteristic BC107 to-92
MC68B21CP Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References	Original	PDF	SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

TRANSISTOR SL 100 Abstract: bs107a Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES BS107A QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. Gate-source voltage open drain • High-speed switching Drain current (DC) • No second breakdown	OCR Scan	PDF	BS107A TRANSISTOR SL 100 bs107a
Untitled Abstract: No abstract text available Text: BS107A J V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use as line current interrupter in telephone sets and fo r application in relay, high-speed and	OCR Scan	PDF	BS107A bb53131 003b0ai 003b003
BS107A Abstract: BS107 MOTOROLA Text: MOTOROLA Order this document by BS107/D SEMICONDUCTOR TECHNICAL DATA TM OS Switching N-Channel — Enhancement BS107 BS107A 1 DRAIN 3 SOURCE MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage — Continuous — Non-repetitive tp < 50 us Symbol	OCR Scan	PDF	BS107/D BS107 BS107A BS107A BS107 MOTOROLA
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching N -C hannel — Enhancement BS107 BS107A 1 DRAIN 3 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Vd S 200 Vdc Vg s Vg SM ±20 ±30 Vdc Vpk Id 'd m 250 500 pd 350 mW T ji Tstg -5 5 to 150 °C Drain - Source Voltage	OCR Scan	PDF	BS107 BS107A O-226AA) BS107
BS107A Abstract: No abstract text available Text: BS107A A _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use as line current interrupter in telephone sets and for application in relay, high-speed and	OCR Scan	PDF	BS107A C03b0ai 7ZSS773 003b005 BS107A
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching BS107 BS107A N -Channel — Enhancement 1 DRAIN G ATE ' 3 SOURCE M AXIM UM R A T IN G S Rating Symbol Value Unit V DS 2 00 Vdc VGS V GSM ± 20 ± 30 Vdc Vpk 'd 'D M 250 500 PD 350 mW ^J. Ts tg - 5 5 to 150	OCR Scan	PDF	BS107 BS107A
2106a Abstract: BST72A CROSS 0545N2 vn1720m ZVN2106A ZVN3306A MPF910 zetex zvp2120a VP0545N2 2N7019 Text: CROSS R EF ER E N C E LIST Industry Part No. Zetex Suggested Replacem ent 2N 6659 2N 6660 2N6661 ZVN2106B ZVN2106B ZVN2110B 2N 7000 2N7001 2N7002 2N7007 2N 7008 2N 7019 2N 7025 2N 7000 ZVN3320F 2N 7002 ZVN3320A ZVN3306A ZVP3306F ZVP2106A BS107 BS107A BS108	OCR Scan	PDF	2N6661 2N7001 2N7002 2N7007 BS107 BS107A BS108 BS170 BS250 BSR64 2106a BST72A CROSS 0545N2 vn1720m ZVN2106A ZVN3306A MPF910 zetex zvp2120a VP0545N2 2N7019
PHC2300 Abstract: BSH202 200B PHC20306 PHP45N03LT php18n20e BST100 PHT11N06LT PHN203 PHB50N03LT Text: Philips Semiconductors PowerMOS Transistors TYPE NUMBER PAGE Index TYPE NUMBER 2N7000 48 BSP110 2N7002 54 BSP120 PAGE TYPE NUMBER PAGE 203 BST84 358 208 BST86 364 BS107 60 BSP121 213 BUK100-50DL 385 BS107A 66 BSP122 219 BUK100-50GL 393 BS108 70 BSP126 221	OCR Scan	PDF	2N7000 2N7002 BS107 BS107A BS108 BS170 BS250 BSH101 BSH102 BSH103 PHC2300 BSH202 200B PHC20306 PHP45N03LT php18n20e BST100 PHT11N06LT PHN203 PHB50N03LT
Untitled Abstract: No abstract text available Text: BS107A _ FOR MORE DETAILED INFORMATION SEE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed fo r use as line current interrupter in telephone sets and fo r application in relay, high-speed and	OCR Scan	PDF	BS107A
Untitled Abstract: No abstract text available Text: BS107A y V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use as line current interrupter in telephone sets and fo r application in relay, high-speed and	OCR Scan	PDF	BS107A

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onsemi BS107AG

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BS107A Datasheets (30)

BS107A Datasheets Context Search

BS107

BS107A equivalent

BC107 characteristic

Untitled

BP317

BS107

BS107

Untitled

Untitled

BS107

BS107 MOTOROLA

BS107

BC107 to92

MC68B21CP

TRANSISTOR SL 100

Untitled

BS107A

Untitled

BS107A

Untitled

2106a

PHC2300

Untitled

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