722D533 Search Results

ZVP3306F

Contextual Info: PLESSEY S EM IC ON D/ D I SC R E T E □3 DE~p 722D533 □00b7bb fl 7 ~ - * 2 7 -^ 2 0 - P-channe! enhancement mode vertical DMOS FET ZVP3306F , ABSOLUTE M AXIM UM RATINGS Parameter Symbol Drain-source voltage SOT-23 -6 0 V -0 .0 9 A Idm -1 .6 A v gs ±20

plessey

Abstract: zvn1409 G146
Contextual Info: PLESSEY SEMICOND/DISCRETE ~^5 DE~| 7520S33 QDG5L37 3 |~~ 7220533 PLESSEY SEMICOND/DISCRETE 95D 05637 T - ^ r - N-channel enhancement mode vertical DMOS FET D ; z r ZVN1409 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown •

Contextual Info: PLESSEY TS SEMICOND/DISCRETE 7220533 P LE S SE Y S EM I C O N D / D I S C R E T E • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance • Low current drive • Ease of paralleling DESCRIPTION A compact Interdigitated geometry forms the

Contextual Info: 7 PLESSEY SEMICOND/DISCRETE dF| 7 5 2 0 S 3 B D D G b b a O 5 | ~ ^ ~ Q 3 BC856 BC858 BC860 PNP silicon planar general purpose transistors BC857 BC859 A B S O L U T E M A X I M U M R A TIN G S Parameter Sym bol Collector-base voltage V cbo BC856 -8 0 BC857