Untitled
Abstract: No abstract text available
Text: PolarTM HiPerFETTM Power MOSFETs VDSS ID25 IXFH12N100P IXFV12N100P IXFV12N100PS RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ 1000V 12A Ω 1.05Ω 300ns PLUS220 (IXFV) G Symbol Test Conditions Maximum Ratings VDSS
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IXFH12N100P
IXFV12N100P
IXFV12N100PS
300ns
PLUS220
12N100P
1-08-A
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IXFV110N25T
Abstract: IXFV110N25TS PLUS220SMD
Text: Preliminary Technical Information IXFV110N25T IXFV110N25TS Trench Gate Power HiperFET VDSS ID25 = 250V = 110A Ω ≤ 24mΩ RDS on N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250
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IXFV110N25T
IXFV110N25TS
PLUS220
110N25T
8-11-08-A
IXFV110N25T
IXFV110N25TS
PLUS220SMD
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200N10T
Abstract: N mosfet 100v 200A IXTV200N10TS PLUS220SMD
Text: IXTV200N10T IXTV200N10TS TrenchMVTM Power MOSFET VDSS ID25 = 100V = 200A Ω ≤ 5.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 175°C 100 V VDGR T J = 25°C to 175°C, RGS = 1MΩ
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IXTV200N10T
IXTV200N10TS
PLUS220
PLUS220SMD
200N10T
9-30-08-D
N mosfet 100v 200A
IXTV200N10TS
PLUS220SMD
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Untitled
Abstract: No abstract text available
Text: TrenchTM HiPerFETTM Power MOSFETs VDSS ID25 IXFV110N25T IXFV110N25TS RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 250V = 110A ≤ 24mΩ Ω PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250
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IXFV110N25T
IXFV110N25TS
PLUS220
PLUS220SMD.
110N25T
5-14-12-B
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Untitled
Abstract: No abstract text available
Text: PolarTM Power MOSFETs HiPerFETTM IXFV52N30P IXFV52N30PS IXFH52N30P VDSS ID25 = = RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 52A 73m 200ns PLUS220 (IXFV) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C
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IXFV52N30P
IXFV52N30PS
IXFH52N30P
200ns
PLUS220
IXFH52N30P
52N30P
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH15N100P IXFV15N100P IXFV15N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 15A Ω 760mΩ 300ns PLUS220 (IXFV) G D S Symbol Test Conditions
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IXFH15N100P
IXFV15N100P
IXFV15N100PS
300ns
PLUS220
15N100P
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Untitled
Abstract: No abstract text available
Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFV22N50P IXFV22N50PS IXFH22N50P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 500V 22A Ω 270mΩ 200ns PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFV22N50P
IXFV22N50PS
IXFH22N50P
200ns
PLUS220
100ms
IXFV22N50PS
22N50P
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Untitled
Abstract: No abstract text available
Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFH12N120P IXFV12N120P IXFV12N120PS RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 12A Ω 1.35Ω 300ns PLUS220 (IXFV) G D Symbol Test Conditions Maximum Ratings VDSS
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IXFH12N120P
IXFV12N120P
IXFV12N120PS
300ns
PLUS220
12N120P
4-01-08-A
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IXFH12N90P
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFH12N90P IXFV12N90P IXFV12N90PS RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 900V 12A Ω 900mΩ 300ns PLUS220 (IXFV) G Symbol Test Conditions
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IXFH12N90P
IXFV12N90P
IXFV12N90PS
300ns
PLUS220
12N90P
IXFH12N90P
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Untitled
Abstract: No abstract text available
Text: PolarTM Power MOSFETs VDSS ID25 IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS220 IXTV RDS(on) trr(typ) G S D (TAB) 500V 22A Ω 270mΩ 400ns TO-3P (IXTQ) PLUS220SMD (IXTV_S) G D S = = ≤
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IXTV22N50P
IXTV22N50PS
IXTQ22N50P
IXTH22N50P
PLUS220
400ns
PLUS220SMD
O-247
100ms
IXTV22N50P
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ixfh12n90p
Abstract: PLUS220SMD
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH12N90P IXFV12N90P IXFV12N90PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 900V 12A Ω 900mΩ 300ns PLUS220 (IXFV) G Symbol Test Conditions
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IXFH12N90P
IXFV12N90P
IXFV12N90PS
300ns
PLUS220
12N90P
ixfh12n90p
PLUS220SMD
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52N30P
Abstract: IXFH52N30P IXFV52N30P IXFV52N30PS PLUS220SMD 52N30
Text: IXFV52N30P IXFV52N30PS IXFH52N30P PolarHTTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 52A Ω 66mΩ 200ns PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFV52N30P
IXFV52N30PS
IXFH52N30P
200ns
PLUS220
100ms
52N30P
3-14-06-C
IXFH52N30P
IXFV52N30P
IXFV52N30PS
PLUS220SMD
52N30
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IXFH36N50P
Abstract: IXFT36N50P
Text: IXFV36N50PS IXFV36N50P IXFH36N50P IXFT36N50P PolarTM HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = = ≤ ≤ RDS on trr 500V 36A Ω 170mΩ 200ns PLUS220SMD (IXFV.S) G S D (Tab) PLUS220 (IXFV) Symbol
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IXFV36N50PS
IXFV36N50P
IXFH36N50P
IXFT36N50P
200ns
PLUS220SMD
PLUS220
O-268
IXFT36N50P
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Untitled
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS = 600 V ID25 = 30 A RDS on ≤ 240 m Ω ≤ 200 ns trr IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings
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30N60P
30N60PS
PLUS220
30N60P
O-247
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IXTQ22N50P
Abstract: IXTH22N50P IXTV22N50P IXTV22N50PS ixtq-22n50p 22N50 PLUS220SMD IXTH 22N50P
Text: IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS220 IXTV VDSS ID25 RDS(on) trr(typ) G D (TAB) S 500V 22A Ω 270mΩ 400ns TO-3P (IXTQ) PLUS220SMD (IXTV_S) G D S = = ≤
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IXTV22N50P
IXTV22N50PS
IXTQ22N50P
IXTH22N50P
PLUS220
400ns
PLUS220SMD
O-247
100ms
IXTV22N50P
IXTQ22N50P
IXTH22N50P
IXTV22N50PS
ixtq-22n50p
22N50
PLUS220SMD
IXTH 22N50P
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH12N120P IXFV12N120P IXFV12N120PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 12A Ω 1.35Ω 300ns PLUS220 (IXFV) G D Symbol Test Conditions
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IXFH12N120P
IXFV12N120P
IXFV12N120PS
300ns
PLUS220
12N120P
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10N100P
Abstract: IXFH10N100P IXFV10N100P N CHANNEL MOSFET 10A 1000V PLUS220SMD
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH10N100P IXFV10N100P IXFV10N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 10A Ω 1.4Ω 300ns PLUS220 (IXFV) Symbol Test Conditions
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IXFH10N100P
IXFV10N100P
IXFV10N100PS
300ns
PLUS220
10N100P
10N100P
IXFH10N100P
IXFV10N100P
N CHANNEL MOSFET 10A 1000V
PLUS220SMD
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IXFH12N120P
Abstract: 12N120P iXfh12n120 PLUS220SMD
Text: PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH12N120P IXFV12N120P IXFV12N120PS VDSS ID25 RDS on trr = = ≤ ≤ 1200V 12A Ω 1.35Ω 300ns PLUS220 (IXFV) G D Symbol Test Conditions Maximum Ratings VDSS
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IXFH12N120P
IXFV12N120P
IXFV12N120PS
300ns
PLUS220
12N120P
4-01-08-A
IXFH12N120P
iXfh12n120
PLUS220SMD
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18n90
Abstract: ixfh18n90 B1 9A IXFV18N90P IXFH18N90P IXFV18N90PS PLUS220SMD
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH18N90P IXFV18N90P IXFV18N90PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 900V 18A Ω 600mΩ 300ns PLUS220 (IXFV) Symbol Test Conditions
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IXFH18N90P
IXFV18N90P
IXFV18N90PS
300ns
PLUS220
18N90P
18n90
ixfh18n90
B1 9A
IXFV18N90P
IXFH18N90P
IXFV18N90PS
PLUS220SMD
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200N1
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTV200N10T IXTV200N10TS = 100 V = 200 A ≤ 5.5 m Ω RDS on N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXTV) G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C
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IXTV200N10T
IXTV200N10TS
PLUS220
PLUS220SMD
200N10T
11-03-06-B
200N1
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information TrenchT2TM Power MOSFET IXTV270N055T2 IXTV270N055T2S VDSS ID25 = 55V = 270A Ω ≤ 3.0mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier PLUS220 (IXTV) G Symbol Test Conditions VDSS TJ = 25°C to 175°C
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IXTV270N055T2
IXTV270N055T2S
PLUS220
270N055T2
3-10-A
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Untitled
Abstract: No abstract text available
Text: TrenchMVTM Power MOSFET VDSS ID25 IXTV200N10T IXTV200N10TS = 100V = 200A Ω ≤ 5.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 175°C 100 V VDGR T J = 25°C to 175°C, RGS = 1MΩ
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IXTV200N10T
IXTV200N10TS
PLUS220
200N10T
9-30-08-D
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Untitled
Abstract: No abstract text available
Text: PolarHTTM Power MOSFET HiPerFETTM VDSS ID25 IXFV74N20P IXFV74N20PS IXFH74N20P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 200V 74A Ω 34mΩ 200ns PLUS220 (IXFV) Symbol Test Conditions VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXFV74N20P
IXFV74N20PS
IXFH74N20P
200ns
PLUS220
74N20P
6-15-05-D
IXFH74N20P
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IXFH74N20P
Abstract: IXFV74N20P IXFV74N20PS PLUS220SMD 74a diode
Text: IXFV74N20P IXFV74N20PS IXFH74N20P PolarHTTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 74A Ω 34mΩ 200ns PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C
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IXFV74N20P
IXFV74N20PS
IXFH74N20P
200ns
PLUS220
74N20P
6-15-05-D
IXFH74N20P
IXFV74N20P
IXFV74N20PS
PLUS220SMD
74a diode
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