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    IXFH52N30P Search Results

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    IXFH52N30P Price and Stock

    IXYS Corporation IXFH52N30P

    MOSFETs 52 Amps 300V 0.066 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFH52N30P 4,951
    • 1 $7.81
    • 10 $7.27
    • 100 $5.17
    • 1000 $4.36
    • 10000 $4.28
    		Buy Now
    Verical IXFH52N30P 282 8
    • 1 -
    • 10 $8.75
    • 100 $8.75
    • 1000 $8.75
    • 10000 $8.75
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    Newark IXFH52N30P Bulk 262 1
    • 1 $7.92
    • 10 $7.36
    • 100 $6.25
    • 1000 $5.58
    • 10000 $5.58
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    Future Electronics IXFH52N30P Tube 37 Weeks 300
    • 1 -
    • 10 -
    • 100 $4.21
    • 1000 $4.07
    • 10000 $4.07
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    Bristol Electronics IXFH52N30P 30
    • 1 -
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    Quest Components IXFH52N30P 24
    • 1 $13.689
    • 10 $12.168
    • 100 $11.2554
    • 1000 $11.2554
    • 10000 $11.2554
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    TTI IXFH52N30P Tube 300 30
    • 1 -
    • 10 -
    • 100 $5.53
    • 1000 $5.32
    • 10000 $5.21
    		Buy Now
    TME IXFH52N30P 282 1
    • 1 $6.73
    • 10 $5.68
    • 100 $5.28
    • 1000 $4.28
    • 10000 $4.03
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    New Advantage Corporation IXFH52N30P 774 1
    • 1 -
    • 10 -
    • 100 $9.09
    • 1000 $8.49
    • 10000 $8.49
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    Vyrian IXFH52N30P 363
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    Littelfuse Inc IXFH52N30P

    DiscMosfetN-CH HiPerFET-Polar TO-247AD | Littelfuse IXFH52N30P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS IXFH52N30P Bulk 8 Weeks 30
    • 1 -
    • 10 -
    • 100 $6.05
    • 1000 $6.05
    • 10000 $6.05
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    IXFH52N30P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFH52N30P IXYS Discrete MOSFETs: HiPerFET Power MOSFETS Original PDF

    IXFH52N30P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFETs HiPerFETTM IXFV52N30P IXFV52N30PS IXFH52N30P VDSS ID25 = =   RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 52A  73m 200ns PLUS220 (IXFV) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C


    Original     		IXFV52N30P IXFV52N30PS IXFH52N30P 200ns PLUS220 IXFH52N30P 52N30P PDF

    52N30P

    Abstract: IXFH52N30P IXFV52N30P IXFV52N30PS PLUS220SMD 52N30
    Text: IXFV52N30P IXFV52N30PS IXFH52N30P PolarHTTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 52A Ω 66mΩ 200ns PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFV52N30P IXFV52N30PS IXFH52N30P 200ns PLUS220 100ms 52N30P 3-14-06-C IXFH52N30P IXFV52N30P IXFV52N30PS PLUS220SMD 52N30 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXFH52N30P IXFT52N30P PolarTM HiPerFET Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast recovery intrinsic diode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings


    Original     		IXFH52N30P IXFT52N30P O-268 O-247AD 52N30P 52N30P PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET HiPerFETTM VDSS ID25 IXFV52N30P IXFV52N30PS IXFH52N30P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 52A Ω 66mΩ 200ns PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFV52N30P IXFV52N30PS IXFH52N30P 200ns PLUS220 100ms 52N30P 3-14-06-C IXFH52N30P PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF