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IXYS Corporation IXFV30N60PS MOSFET N-CH 600V 30A PLUS-220SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFV30N60PS	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXTV30N60PS MOSFET N-CH 600V 30A PLUS-220SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTV30N60PS	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

30N60PS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
30N60P Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS VDSS ID25 = = RDS on ≤ ≤ trr Symbol Test Conditions VDSS TJ = 25°C to 150°C	Original	30N60P 30N60PS O-268 PLUS220 30N60P	PDF
30N60P Abstract: 30N60 IXTQ30N60P PLUS220SMD equivalent for 30n60p Contextual Info: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 30 A RDS on ≤ 240 m Ω IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	30N60P 30N60PS O-268 PLUS220 30N60P 30N60 IXTQ30N60P PLUS220SMD equivalent for 30n60p	PDF
30n60 Abstract: 30N60P PLUS220SMD Contextual Info: Advanced Technical Information PolarHVTM Power MOSFET IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 = 600 V = 30 A Ω RDS on ≤ 240 mΩ Symbol Test Conditions Maximum Ratings	Original	30N60P 30N60PS O-247 PLUS220 30N60P 30n60 PLUS220SMD	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS = 600 V ID25 = 30 A RDS on ≤ 240 m Ω ≤ 200 ns trr IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings	Original	30N60P 30N60PS PLUS220 30N60P O-247	PDF
Contextual Info: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 30 A RDS on ≤ 240 m Ω IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	30N60P 30N60PS O-247 PLUS220 O-268 30N60P	PDF
QG SMD TRANS Abstract: 30N60P 30n60 PLUS220SMD t30n60p Contextual Info: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS = 600 V ID25 = 30 A RDS on ≤ 240 m Ω ≤ 200 ns trr IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings	Original	30N60P 30N60PS PLUS220 30N60P O-247 QG SMD TRANS 30n60 PLUS220SMD t30n60p	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF