IXFH12N100P Search Results

IXFH12N100P Price and Stock

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Littelfuse Inc IXFH12N100P MOSFET N-CH 1000V 12A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFH12N100P	Tube	445		1	1 $9.73 10 $9.73 100 $6.10867 1000 $4.78933 10000 $4.78933	Buy Now
RS	IXFH12N100P	Bulk		8 Weeks	30	1 - 10 - 100 $7.4 1000 $7.4 10000 $7.4	Get Quote
IXYS Corporation IXFH12N100P MOSFETs 12 Amps 1000V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFH12N100P		464			1 $9.54 10 $9.14 100 $6.1 1000 $5.18 10000 $4.78	Buy Now
Verical	IXFH12N100P		286		7	1 - 10 $10.696 100 $10.696 1000 $10.696 10000 $10.696	Buy Now
Newark	IXFH12N100P	Bulk	596		1	1 $8.86 10 $7.14 100 $6.46 1000 $5.39 10000 $5.39	Buy Now
TTI	IXFH12N100P	Tube	300		30	1 - 10 - 100 $6.64 1000 $6.38 10000 $6.38	Buy Now
TME	IXFH12N100P		288		1	1 $8.73 10 $6.94 100 $6.24 1000 $6.24 10000 $6.24	Buy Now

Vyrian	IXFH12N100P		405			1 - 10 - 100 - 1000 - 10000 -	Get Quote

IXFH12N100P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFH12N100P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 12A TO-247		Original	PDF

IXFH12N100P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: PolarTM HiPerFETTM Power MOSFETs VDSS ID25 IXFH12N100P IXFV12N100P IXFV12N100PS RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ 1000V 12A Ω 1.05Ω 300ns PLUS220 (IXFV) G Symbol Test Conditions Maximum Ratings VDSS	Original	IXFH12N100P IXFV12N100P IXFV12N100PS 300ns PLUS220 12N100P 1-08-A	PDF
IXFH12N100P Abstract: 12n100p f12n10 Contextual Info: PolarTM HiPerFETTM Power MOSFETs IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000	Original	IXFH12N100P IXFV12N100P IXFV12N100PS 300ns PLUS220 PLUS220SMD O-247 12N100P 1-08-A f12n10	PDF
f12n10 Abstract: 12n100p f12n Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 12A Ω 1.05Ω 300ns PLUS220 (IXFV) G Symbol Test Conditions	Original	IXFH12N100P IXFV12N100P IXFV12N100PS 300ns PLUS220 PLUS220SMD 12N100P f12n10 f12n	PDF
f12n10 Abstract: 12n100p PLUS220SMD IXFH12N100P IXFV12N100PS diode 6A 1000v Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 12A Ω 1.05Ω 300ns PLUS220 (IXFV) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXFH12N100P IXFV12N100P IXFV12N100PS 300ns PLUS220 150GS 12N100P 1-08-A f12n10 PLUS220SMD IXFH12N100P IXFV12N100PS diode 6A 1000v	PDF