Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXFV110N25TS Search Results

    SF Impression Pixel

    IXFV110N25TS Price and Stock

    IXYS Corporation IXFV110N25TS

    MOSFET N-CH 110A PLUS220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFV110N25TS Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    IXFV110N25TS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXFV110N25T

    Abstract: IXFV110N25TS PLUS220SMD
    Contextual Info: Preliminary Technical Information IXFV110N25T IXFV110N25TS Trench Gate Power HiperFET VDSS ID25 = 250V = 110A Ω ≤ 24mΩ RDS on N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250


    Original     		IXFV110N25T IXFV110N25TS PLUS220 110N25T 8-11-08-A IXFV110N25T IXFV110N25TS PLUS220SMD PDF

    Contextual Info: TrenchTM HiPerFETTM Power MOSFETs VDSS ID25 IXFV110N25T IXFV110N25TS RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 250V = 110A ≤ 24mΩ Ω PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250


    Original     		IXFV110N25T IXFV110N25TS PLUS220 PLUS220SMD. 110N25T 5-14-12-B PDF

    Contextual Info: IXFV110N25T IXFV110N25TS TrenchTM HiPerFETTM Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 250V = 110A ≤ 24mΩ Ω PLUS220 (IXFV) Symbol Test Conditions VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXFV110N25T IXFV110N25TS PLUS220 PLUS220SMD 110N25T 5-14-12-B PDF