KM44C16000B
Abstract: KM44C16100B
Text: KM44C16000B, KM44C16100B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-45, -5 or -6), package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 16Mx4 Fast
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KM44C16000B,
KM44C16100B
16Mx4
400mil
KM44C16000B
KM44C16100B
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Untitled
Abstract: No abstract text available
Text: KM44C16000B, KM44C16100B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5 or -6), package type(SOJ or TSOP-II) are optional features
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KM44C16000B,
KM44C16100B
16Mx4
400mil
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KM44C16000B
Abstract: KM44C16100B km44c16000
Text: KM44C16000B, KM44C16100B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-45, -5 or -6), package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 16Mx4 Fast
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KM44C16000B,
KM44C16100B
16Mx4
400mil
KM44C16000B
KM44C16100B
km44c16000
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KMM53616000BK
Abstract: KMM53616000BKG
Text: DRAM MODULE KMM53616000BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd.(4th.) generation of 64M(16M) DRAM components are applied for this module.
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KMM53616000BK/BKG
KMM53616000BK/BKG
16Mx4
16Mx1,
KMM53616000B
16Mx36bits
16Mx4bits
16Mx1bit
KMM53616000BK
KMM53616000BKG
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KMM53232000BK
Abstract: KMM53232000BKG
Text: DRAM MODULE KMM53232000BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd. generation of 64M DRAM components are applied for this module.
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KMM53232000BK/BKG
KMM53232000BK/BKG
16Mx4,
KMM53232000B
32Mx32bits
16Mx4bits
72-pin
KMM53232000BK
KMM53232000BKG
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KMM53632000BK
Abstract: KMM53632000BKG
Text: DRAM MODULE KMM53632000BK/BKG KMM53632000BK/BKG Fast Page Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53632000B is a 32Mx36bits Dynamic RAM high density memory module. The Samsung KMM53632000B consists of sixteen CMOS 16Mx4bits and
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KMM53632000BK/BKG
KMM53632000BK/BKG
16Mx4
16Mx1,
KMM53632000B
32Mx36bits
16Mx4bits
16Mx1bit
72-pin
KMM53632000BK
KMM53632000BKG
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM53232000BV/BVG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (May 1998) • The 3rd. generation of 64M DRAM components are applied for this module.
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KMM53232000BV/BVG
KMM53232000BV/BVG
16Mx4,
KMM53232000B
32Mx32bits
16Mx4bits
72-pin
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM364C160 8 0BK/BS KMM364C160(8)0BK/BS Fast Page Mode 16M x 64 DRAM DIMM Using 16Mx4, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C160(8)0B is a 16Mx64bits Dynamic RAM high density memory module. The Samsung KMM364C160(8)0B consists of sixteen CMOS 16Mx4bits
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KMM364C160
16Mx4,
16Mx64bits
16Mx4bits
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM53216000BV/BVG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd. generation of 64M DRAM components are applied for this module.
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KMM53216000BV/BVG
KMM53216000BV/BVG
16Mx4,
KMM53216000B
16Mx32bits
16Mx4bits
72-pin
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KMM53232000BK
Abstract: KMM53232000BKG
Text: DRAM MODULE KMM53232000BK/BKG KMM53232000BK/BKG Fast Page Mode 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53232000B is a 32Mx32bits Dynamic RAM high density memory module. The Samsung KMM53232000B consists of sixteen CMOS 16Mx4bits
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KMM53232000BK/BKG
KMM53232000BK/BKG
16Mx4,
KMM53232000B
32Mx32bits
16Mx4bits
72-pin
KMM53232000BK
KMM53232000BKG
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KMM372C1600BK
Abstract: KMM372C1600BS KMM372C1680BK KMM372C1680BS
Text: DRAM MODULE KMM372C160 8 0BK/BS KMM372C160(8)0BK/BS Fast Page Mode 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C160(8)0B is a 16Mx72bits Dynamic RAM high density memory module. The Samsung KMM372C160(8)0B consists of eighteen CMOS 16Mx4bits
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KMM372C160
16Mx4,
16Mx72bits
16Mx4bits
400mil
168-pin
KMM372C1600BK
KMM372C1600BS
KMM372C1680BK
KMM372C1680BS
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KMM53216000BK
Abstract: KMM53216000BKG
Text: DRAM MODULE KMM53216000BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (May 1998) • The 3rd. generation of 64M DRAM components are applied for this module.
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KMM53216000BK/BKG
KMM53216000BK/BKG
16Mx4,
KMM53216000B
16Mx32bits
16Mx4bits
72-pin
KMM53216000BK
KMM53216000BKG
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KMM53616000BK
Abstract: KMM53616000BKG
Text: DRAM MODULE KMM53616000BK/BKG KMM53616000BK/BKG Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53616000B is a 16Mx36bits Dynamic RAM high density memory module. The Samsung KMM53616000B consists of eight CMOS 16Mx4bits DRAMs
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KMM53616000BK/BKG
KMM53616000BK/BKG
16Mx4
16Mx1,
KMM53616000B
16Mx36bits
16Mx4bits
16Mx1bit
72-pin
KMM53616000BK
KMM53616000BKG
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4MB DRAM
Abstract: 4MX16 1MX16
Text: TABLE OF CONTENTS I. GENERAL INFORMATION 1. Introduction . 11 2. Product Guide . 17 3. Ordering information . .
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KM41C4000D/KM41V4000D.
KM44C1000D/KM44V1000D.
KM44C1003D
-KM44C1004D/KM44V1004D.
KM44C1005D
-KM48C512D/KM48V512D.
KM48C512D
4MB DRAM
4MX16
1MX16
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KM44C4105C-6
Abstract: KM44C16004
Text: General Information CMOS DRAM 1. introduction 4Mbit 4Mx1 KM41C4000D-5 - KM41C4000D-6 - KM41C4000D-7 KM41C4000D-L5 1Mx4 KM41C4000D-L6 KM41C4000D-L7 KM41V4000D-6 KM41V4000D-7 KM41V4000D-L6 KM41V4000D-L7 KM44C1000D-5 - KM44C1000D-6 - KM44C1000D-7 KM44C1000D-L5 - KM44C1000D-L6 - KM44C1000D-L7
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KM41C4000D-5
KM41C4000D-6
KM41C4000D-7
KM41C4000D-L5
KM41C4000D-L6
KM41V4000D-6
KM41V4000D-L6
KM41C4000D-L7
KM41V4000D-7
KM41V4000D-L7
KM44C4105C-6
KM44C16004
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM53632000BK/BKG KMM53632000BK/BKG Fast Page Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53632000B is a 32Mx36bits Dynamic RAM high density memory module. The Samsung KMM53632000B consists of sixteen CMOS 16Mx4bits and
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OCR Scan
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PDF
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KMM53632000BK/BKG
KMM53632000BK/BKG
16Mx4
16Mx1,
KMM53632000B
32Mx36bits
16Mx4bits
16Mx1
72-pin
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM53216000BK/BKG 4 Byte 16Mx32SIMM 16Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KMM53216000BK/BKG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.
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OCR Scan
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KMM53216000BK/BKG
16Mx32SIMM
16Mx4
KMM53216000BK/BKG
16Mx4,
KMM53216000B
16Mx32bits
KMM53216000BK
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372C160 8 0BK/BS KMM372C160(8)0BK/BS Fast Page Mode 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C160(8)0B is a 16Mx72bits Dynamic RAM high density memory module. The Samsung KMM372C160(8)0B consists of eighteen CMOS 16Mx4bits
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OCR Scan
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PDF
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KMM372C160
16Mx4,
16Mx72bits
16Mx4bits
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM53616000BK/BKG KMM53616000BK/BKG Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53616000B is a 16Mx36bits Dynamic RAM high density memory module. The Samsung KMM53616000B consists of eight CMOS 16Mx4bits DRAMs
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OCR Scan
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KMM53616000BK/BKG
KMM53616000BK/BKG
16Mx4
16Mx1,
KMM53616000B
16Mx36bits
16Mx4bits
16Mx1
72-pin
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CACP
Abstract: km44c16000
Text: DRAM M ODULE KMM372C160 8 0BK/BS Buffered 16Mx72 DIMM (16Mx4 base) Revision 0.0 Sept. 1997 DRAM M ODULE KM M 372 C1 60(8)0B K/B S Revision History Version 0.0 (Sept, 1 997) Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in AC C H A R A C T E R I S T I C S .
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KMM372C160
16Mx72
16Mx4
KMM372C1
16Mx4,
16Mx72bits
16Mx4bits
400mil
CACP
km44c16000
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM53232000BK/BKG 4Byte 32Mx32 SIMM 16Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KMM53232000BK/BKG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.
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KMM53232000BK/BKG
32Mx32
16Mx4
KMM53232000BK/BKG
16Mx4,
KMM53232000B
32Mx32bits
KMM53232000B
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Untitled
Abstract: No abstract text available
Text: KMM53216000BK/BKG DRAM MODULE 4 Byte 16Mx32SIMM 16Mx4 base Revision 0.0 Sept. 1997 ELECTRONICS KMM53216000BK/BKG DRAM MODULE Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t ELECTRONICS c acp (access time from CAS) and tAAP (access time from col. addr.) in A C CHARACTERISTICS.
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OCR Scan
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KMM53216000BK/BKG
16Mx32SIMM
16Mx4
KMM53216000BK/BKG
16Mx4,
KMM53216000B
16Mx32bits
KMM53216000BK
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km44c16000
Abstract: No abstract text available
Text: KM44C16000B, KM44C161OOB CMOS PRAM 16Mx 4bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref , access time(-45, -5 or -6), package type(SOJ or TSOP-II) are optional fea
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OCR Scan
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PDF
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KM44C16000B,
KM44C161OOB
16Mx4
KM44C16000B
KM44C16100S
km44c16000
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM364C160 8 0BK/BS KMM364C160(8)0BK/BS Fast Page Mode 16M x 64 DRAM DIMM Using 16Mx4, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C160(8)0B is a 16Mx64bits Dynamic RAM high density memory module. The Samsung KMM364C160(8)0B consists of sixteen CMOS 16Mx4bits
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OCR Scan
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PDF
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KMM364C160
16Mx4,
16Mx64bits
16Mx4bits
400mil
168-pin
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