16MX32BITS Search Results

KMM53216004BK

Abstract: KMM53216004BKG
Contextual Info: DRAM MODULE KMM53216004BK/BKG KMM53216004BK/BKG EDO Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53216004B is a 16Mx32bits Dynamic RAM high density memory module. The Samsung KMM53216004B consists of eight CMOS 16Mx4bits DRAMs

M53216

Abstract: 16Mx32-bit
Contextual Info: DRAM MODULE KM M53216004AK/A KG KMM53216004AK/AKG EDO Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung K M M 53216004A is a 16Mx32bits RAM high density memory module. The Dynamic Samsung -• Part Identification

KMM53216000BK

Abstract: KMM53216000BKG
Contextual Info: DRAM MODULE KMM53216000BK/BKG KMM53216000BK/BKG Fast Page Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53216000B is a 16Mx32bits Dynamic RAM high density memory module. The Samsung KMM53216000B consists of eight CMOS 16Mx4bits DRAMs

Contextual Info: DRAM MODULE KMM53216004BK/BKG 4 Byte 16Mx32SIMM 16Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KMM53216004BK/BKG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.

KMM53216004BK

Abstract: KMM53216004BKG
Contextual Info: DRAM MODULE KMM53216004BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd. generation of 64M DRAM components are applied for this module.

KMM53216000CK

Abstract: KMM53216000CKG
Contextual Info: DRAM MODULE KMM53216000CK/CKG 4Byte 16Mx32 SIMM 16Mx4 base Revision 0.0 JUNE 1998 DRAM MODULE Revision History Version 0.0 (JUNE 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM53216000CK/CKG DRAM MODULE KMM53216000CK/CKG

KMM53216004CK

Abstract: KMM53216004CKG samsung 64mb dram module 72-pin simm
Contextual Info: DRAM MODULE KMM53216004CK/CKG 4Byte 16Mx32 SIMM 16Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM53216004CK/CKG DRAM MODULE KMM53216004CK/CKG

16Mx4bits

Contextual Info: DRAM MODULE M53211600CE0/CJ0-C 4Byte 16Mx32 SIMM 16Mx4 base Revision 0.0 JUNE 1998 DRAM MODULE Revision History Version 0.0 (JUNE 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53211600CE0/CJ0-C DRAM MODULE M53211600CE0/CJ0-C

Contextual Info: DRAM MODULE M53211600BE0/BJ0-C 4Byte 16Mx32 SIMM 16Mx4 base Revision 0.1 May 1998 DRAM MODULE M53211600BE0/BJ0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.

Contextual Info: DRAM MODULE KMM53216000CV/CVG 4Byte 16Mx32 SIMM 16Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM53216000CV/CVG DRAM MODULE KMM53216000CV/CVG

Contextual Info: DRAM MODULE KMM53216000BK/BKG 4 Byte 16Mx32SIMM 16Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KMM53216000BK/BKG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.

Contextual Info: DRAM MODULE KMM53216000BV/BVG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd. generation of 64M DRAM components are applied for this module.

Contextual Info: DRAM MODULE M53231600CE0/CJ0-C 4Byte 16Mx32 SIMM 16Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53231600CE0/CJ0-C DRAM MODULE M53231600CE0/CJ0-C

64mb 72-pin simm

Contextual Info: DRAM MODULE M53231600BE0/BJ0-C 4Byte 16Mx32 SIMM 16Mx4 base Revision 0.1 June 1998 DRAM MODULE M53231600BE0/BJ0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.

Contextual Info: KMM53216000BK/BKG DRAM MODULE 4 Byte 16Mx32SIMM 16Mx4 base Revision 0.0 Sept. 1997 ELECTRONICS KMM53216000BK/BKG DRAM MODULE Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t ELECTRONICS c acp (access time from CAS) and tAAP (access time from col. addr.) in A C CHARACTERISTICS.

KMM53216000BK

Abstract: KMM53216000BKG
Contextual Info: DRAM MODULE KMM53216000BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (May 1998) • The 3rd. generation of 64M DRAM components are applied for this module.

Contextual Info: DRAM MODULE KMM53216004BV/BVG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd. generation of 64M DRAM components are applied for this moudule.

LTRW

Contextual Info: KMM53216004BK/BKG DRAM MODULE 4 Byte 16Mx32SIMM 16Mx4 base Revision 0.0 Sept. 1997 ELECTRONICS KMM53216004BK/BKG DRAM MODULE Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t ELECTRONICS c acp (access time from CAS) and tAAP (access time from col. addr.) in A C CHARACTERISTICS.