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    KMM53232000BKG Search Results

    KMM53232000BKG Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KMM53232000BKG-5 Samsung Electronics 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V Original PDF
    KMM53232000BKG-6 Samsung Electronics 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V Original PDF

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    KMM53232000BK

    Abstract: KMM53232000BKG
    Text: DRAM MODULE KMM53232000BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd. generation of 64M DRAM components are applied for this module.


    Original     		PDF KMM53232000BK/BKG KMM53232000BK/BKG 16Mx4, KMM53232000B 32Mx32bits 16Mx4bits 72-pin KMM53232000BK KMM53232000BKG

    KMM53232000BK

    Abstract: KMM53232000BKG
    Text: DRAM MODULE KMM53232000BK/BKG KMM53232000BK/BKG Fast Page Mode 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53232000B is a 32Mx32bits Dynamic RAM high density memory module. The Samsung KMM53232000B consists of sixteen CMOS 16Mx4bits


    Original     		PDF KMM53232000BK/BKG KMM53232000BK/BKG 16Mx4, KMM53232000B 32Mx32bits 16Mx4bits 72-pin KMM53232000BK KMM53232000BKG

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53232000BK/BKG 4Byte 32Mx32 SIMM 16Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KMM53232000BK/BKG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		PDF KMM53232000BK/BKG 32Mx32 16Mx4 KMM53232000BK/BKG 16Mx4, KMM53232000B 32Mx32bits KMM53232000B