KMM53232000B Search Results

KMM53232000BK

Abstract: KMM53232000BKG
Contextual Info: DRAM MODULE KMM53232000BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd. generation of 64M DRAM components are applied for this module.

Contextual Info: DRAM MODULE KMM53232000BV/BVG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (May 1998) • The 3rd. generation of 64M DRAM components are applied for this module.

KMM53232000BK

Abstract: KMM53232000BKG
Contextual Info: DRAM MODULE KMM53232000BK/BKG KMM53232000BK/BKG Fast Page Mode 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53232000B is a 32Mx32bits Dynamic RAM high density memory module. The Samsung KMM53232000B consists of sixteen CMOS 16Mx4bits

Contextual Info: DRAM MODULE KMM53232000BK/BKG 4Byte 32Mx32 SIMM 16Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KMM53232000BK/BKG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.

"24 pin" DRAM

Contextual Info: DRAM MODULE KM M53232000B K/B KG 4Byte 32Mx32 SIMM 16Mx4 base Revision 0.0 Sept. 1997 ELECTRONICS DRAM MODULE KM M53232000B K/B KG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t ELECTRONICS c acp (access time from CAS) and tAAP (access time from col. addr.) in A C CHARACTERISTICS.