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    16MX1BIT Search Results

    16MX1BIT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: KM41C16002A CMOS DRAM 16Mx1Bit CMOS Dynamic RAM with Static Column Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Static Column Mode CMOS DRAMs. Static Column Mode offers high speed random access of memory cells within the same row. Access time -5, -6, -7 or -8 and package


    OCR Scan     		KM41C16002A 16Mx1Bit 16Mx1 PDF

    simm 72pin

    Abstract: HMD16M36M12EG
    Contextual Info: HANBit HMD16M36M12EG 64Mbyte 16Mx36 EDO/with Parity Mode 4K Ref. 72pin-SIMM Design Part No. HMD16M36M12EG GENERAL DESCRIPTION The HMD16M36M12EG is a 16M x 36bit dynamic RAM high-density memory module. The module consists of eight CMOS 16M x 4bit DRAMs in 32-pin SOJ or TSOP packages and four CMOS 16Mx1bit DRAMs in SOJ or TSOP packages


    Original     		HMD16M36M12EG 64Mbyte 16Mx36) 72pin-SIMM HMD16M36M12EG 36bit 32-pin 16Mx1bit 72-pin simm 72pin PDF

    cbf 495

    Abstract: 13T3A
    Contextual Info: KM41C16000C, KM41V16Q00C CMOS DRAM 16Mx1Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time {-5 or -6), power consumption(Normal or Low power) and


    OCR Scan     		KM41C16000C, KM41V16Q00C 16Mx1Bit 16Mx1 cbf 495 13T3A PDF

    1MX16BIT

    Abstract: 16MX1
    Contextual Info: 'H Y U N D A I TABLE OF CONTENTS 1. TABLE OF CONTENTS In d e x . 1 2. PRODUCT QUICK REFERENCE


    OCR Scan     		256Kx4-bit, 1MX16BIT 16MX1 PDF

    44C16104A

    Abstract: 44c16104
    Contextual Info: KM M53632004A K/A KG DRAM MODULE KM M53632004AK/AKG EDO Mode 32M X 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M53632004A is a 32Mx36bits RAM high density memory module. The Dynamic Samsung KM M 53632004A consists of sixteen CM O S 16Mx4bits and


    OCR Scan     		M53632004A M53632004AK/AKG 16Mx4 16Mx1 32Mx36bits M53632004AK cycles/64ms 53632004AKG 44C16104A 44c16104 PDF

    Contextual Info: DRAM MODULE 16 Mega Byte KMM5816000A/AT Fast Page Mode / 16Mx8 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package / GENERAL DESCRIPTION FEATURES The Samsung KMM5816000A is a 16M bit x 8 Dynamic RAM high density memory module. The Samsung KMM5816000A consists of eight CMOS


    OCR Scan     		KMM5816000A/AT 16Mx8 KMM5816000A 16Mx1bit 24-pin 30-pin PDF

    KMM53616000BK

    Abstract: KMM53616000BKG
    Contextual Info: DRAM MODULE KMM53616000BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd.(4th.) generation of 64M(16M) DRAM components are applied for this module.


    Original     		KMM53616000BK/BKG KMM53616000BK/BKG 16Mx4 16Mx1, KMM53616000B 16Mx36bits 16Mx4bits 16Mx1bit KMM53616000BK KMM53616000BKG PDF

    KMM53632004BK

    Abstract: KMM53632004BKG
    Contextual Info: DRAM MODULE KMM53632004BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd.(4th.) generation of 64M(16M) components are applied for this module.


    Original     		KMM53632004BK/BKG KMM53632004BK/BKG 16Mx4 16Mx1 KMM53632004B 32Mx36bits 16Mx4bits 16Mx1bit KMM53632004BK KMM53632004BKG PDF

    KMM53616000CK

    Abstract: KMM53616000CKG
    Contextual Info: DRAM MODULE KMM53616000CK/CKG 4Byte 16Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM53616000CK/CKG DRAM MODULE KMM53616000CK/CKG


    Original     		KMM53616000CK/CKG 16Mx36 16Mx4 16Mx1 KMM53616000CK/CKG 16Mx1, KMM53616000C KMM53616000CK KMM53616000CKG PDF

    KMM53632000BK

    Abstract: KMM53632000BKG
    Contextual Info: DRAM MODULE KMM53632000BK/BKG KMM53632000BK/BKG Fast Page Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53632000B is a 32Mx36bits Dynamic RAM high density memory module. The Samsung KMM53632000B consists of sixteen CMOS 16Mx4bits and


    Original     		KMM53632000BK/BKG KMM53632000BK/BKG 16Mx4 16Mx1, KMM53632000B 32Mx36bits 16Mx4bits 16Mx1bit 72-pin KMM53632000BK KMM53632000BKG PDF

    Contextual Info: DRAM MODULE 16 Mega Byte KMM5916000A/AT Fast Page Mode 1 6 M x 9 D R A M S IM M , 4K Refresh , 5V Using 16M D R A M with 4 0 0 mil P ackage GENERAL DESCRIPTION The S am sung K M M 5916000A is a 16M bit x 9 FEATURES • Performance Range: D ynam ic RAM high density m em ory module. The


    OCR Scan     		KMM5916000A/AT 916000A 16Mx1bit 24-pin 30-pin KMM5916000A PDF

    Contextual Info: DRAM MODULE M53633201BE0/BJ0-C 4Byte 32Mx36 SIMM PDpin 16Mx4 & 16Mx1 base Revision 0.1 June 1998 DRAM MODULE M53633201BE0/BJ0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    Original     		M53633201BE0/BJ0-C 32Mx36 16Mx4 16Mx1 M53633201BE0/BJ0-C PDF

    Contextual Info: DRAM MODULE M53631601BE0/BJ0-C 4Byte 16Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.1 June 1998 DRAM MODULE M53631601BE0/BJ0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    Original     		M53631601BE0/BJ0-C 16Mx36 16Mx4 16Mx1 M53631601BE0/BJ0-C 16Mx1, PDF

    16Mx4bit

    Abstract: KMM53616004BK KMM53616004BKG
    Contextual Info: DRAM MODULE KMM53616004BK/BKG KMM53616004BK/BKG EDO Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53616004B is a 16Mx36bits Dynamic RAM high density memory module. The Samsung KMM53616004B consists of eight CMOS 16Mx4bits DRAMs


    Original     		KMM53616004BK/BKG KMM53616004BK/BKG 16Mx4 16Mx1, KMM53616004B 16Mx36bits 16Mx4bits 16Mx1bit 72-pin 16Mx4bit KMM53616004BK KMM53616004BKG PDF

    irp 540

    Contextual Info: DRAM MODULE 16 Mega Byte KMM5916000A/AT Fast Page Mode 16Mx9 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package G E N E R A L DESC RIPTIO N The Samsung KMM5916000A is a 16M bit x 9 FEATURES • Performance Range: Dynamic RAM high density memory module. The


    OCR Scan     		KMM5916000A/AT 16Mx9 KMM5916000A 16Mx1bit 24-pin 30-pin irp 540 PDF

    km44c16104ak

    Abstract: 44c16104
    Contextual Info: DRAM MODULE KMM53616004AK/AKG KMM53616004AK/AKG Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M 53616004A is a 16Mx36bits RAM high density memory module. The Dynamic Samsung KM M 53616004A consists of eight CM O S 16Mx4bits DRAMs


    OCR Scan     		KMM53616004AK/AKG KMM53616004AK/AKG 16Mx4 16Mx1, 3616004A 16Mx36bits M53616004AK cycles/64ms M53616004AKG km44c16104ak 44c16104 PDF

    KMM53616004BK

    Abstract: KMM53616004BKG
    Contextual Info: DRAM MODULE KMM53616004BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd.(4th.) generation of 64M(16M) DRAM components are applied for this module.


    Original     		KMM53616004BK/BKG KMM53616004BK/BKG 16Mx4 16Mx1, KMM53616004B 16Mx36bits 16Mx4bits KMM53616004BK KMM53616004BKG PDF

    KMM53632004CK

    Abstract: KMM53632004CKG
    Contextual Info: DRAM MODULE KMM53632004CK/CKG 4Byte 32Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb components are applied for this module. KMM53632004CK/CKG DRAM MODULE KMM53632004CK/CKG


    Original     		KMM53632004CK/CKG 32Mx36 16Mx4 16Mx1 KMM53632004CK/CKG KMM53632004C KMM53632004CK KMM53632004CKG PDF

    Contextual Info: DRAM MODULE M53613201BE0/BJ0-C 4Byte 32Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.1 June 1998 DRAM MODULE M53613201BE0/BJ0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS.


    Original     		M53613201BE0/BJ0-C 32Mx36 16Mx4 16Mx1 M53613201BE0/BJ0-C 16Mx1, PDF

    16Mx1bit

    Contextual Info: DRAM MODULE 16 Mega Byte Preliminary KMM5916000a k Fast Page Mode 16Mx9 DRAM SIMM , 4K Refresh , 5V ^ Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION The Samsung KMM5916000AK is a 16M bit x 9 Dynamic RAM high density memory module. The Samsung KMM5916000AK consists of nine CMOS


    OCR Scan     		KMM5916000a 16Mx9 KMM5916000AK 16Mx1bit 24-pin 30-pin PDF

    KM41C16000BK

    Abstract: KMM53632000AK
    Contextual Info: DRAM MODULE KMM53632000AK/AKG KMM53632000AK/AKG Fast Page Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53632000A is a 32Mx36bits Dynamic Part Identification RAM high density memory module. The Samsung


    OCR Scan     		KMM53632000AK/AKG KMM53632000AK/AKG 16Mx4 16Mx1, KMM53632000A 32Mx36bits 16Mx4bits 16Mx1bit 72-pin KM41C16000BK KMM53632000AK PDF

    Contextual Info: DRAM MODULE 16 Mega Byte Preliminary KMM5816000AK Fast Page Mode 16Mx8 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION The Sam sung KM M 5816000AK is a 16M bit x 8 FEATURES • Performance Range: D ynam ic RAM high density m em ory module. The


    OCR Scan     		KMM5816000AK 16Mx8 5816000AK 16Mx1bit 24-pin 816000A PDF

    KMM53632000CK

    Abstract: KMM53632000CKG
    Contextual Info: DRAM MODULE KMM53632000CK/CKG 4Byte 32Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb components are applied for this module. KMM53632000CK/CKG DRAM MODULE KMM53632000CK/CKG


    Original     		KMM53632000CK/CKG 32Mx36 16Mx4 16Mx1 KMM53632000CK/CKG 16Mx1, KMM53632000C KMM53632000CK KMM53632000CKG PDF

    Contextual Info: DRAM MODULE M53631601CE0/CJ0-C 4Byte 16Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53631601CE0/CJ0-C DRAM MODULE M53631601CE0/CJ0-C


    Original     		M53631601CE0/CJ0-C 16Mx36 16Mx4 16Mx1 M53631601CE0/CJ0-C 16Mx1, PDF