Untitled
Abstract: No abstract text available
Text: KMM364E1600AK/AS KMM364E1680AK/AS DRAM MODULE KMM364E1600AK/AS & KMM364E1680AK/AS Fast Page with EDO Mode 16Mx64 DRAM DIMM based on 16Mx4, 4K & 8K Refresh, 5V FEATURES GENERAL DESCR IPTIO N CMOS 16Mx4bit DRAMs in SOJ/TSOP-II 400mii • Part Identification
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KMM364E1600AK/AS
KMM364E1680AK/AS
KMM364E1680AK/AS
16Mx64
16Mx4,
16Mx4bit
400mii
KMM364E1600AK
KMM364E1600AS
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44C16104A
Abstract: 44c16104
Text: KM M53632004A K/A KG DRAM MODULE KM M53632004AK/AKG EDO Mode 32M X 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M53632004A is a 32Mx36bits RAM high density memory module. The Dynamic Samsung KM M 53632004A consists of sixteen CM O S 16Mx4bits and
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M53632004A
M53632004AK/AKG
16Mx4
16Mx1
32Mx36bits
M53632004AK
cycles/64ms
53632004AKG
44C16104A
44c16104
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM53232004AK/AKG KMM53232004AK/AKG EDO Mode 32M X 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M 53232004A is a 32Mx32bits RAM high density KM M 53232004A memory consists of module. sixteen Dynamic The Samsung
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KMM53232004AK/AKG
16Mx4,
3232004A
32Mx32bits
16Mx4bits
KMM53232004AK/AKG
M53232004AK
cycles/64ms
M53232004AKG
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Untitled
Abstract: No abstract text available
Text: DRAM M ODULE KM M 3 72E320 8 0B K Buffered 32Mx72 DIMM (16Mx4 base) Revision 0.0 Sept. 1997 DRAM M ODULE KM M 3 72E320( 8) 0B K Revision History Version 0.0 (Sept, 1997) ; Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.
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72E320(
32Mx72
16Mx4
372E320
16Mx4,
KMM372E320
32Mx72bits
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km44c16104ak
Abstract: 44c16104
Text: DRAM MODULE KMM53616004AK/AKG KMM53616004AK/AKG Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M 53616004A is a 16Mx36bits RAM high density memory module. The Dynamic Samsung KM M 53616004A consists of eight CM O S 16Mx4bits DRAMs
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KMM53616004AK/AKG
KMM53616004AK/AKG
16Mx4
16Mx1,
3616004A
16Mx36bits
M53616004AK
cycles/64ms
M53616004AKG
km44c16104ak
44c16104
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1004CL
Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
Text: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page
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KM41C1000D#
KM41C1000D-L#
256Kx4)
256Kx4
KM44C256D#
KM44C256D-L#
128Kx8
KM48C128#
KM48C128
KM48C124#
1004CL
KM48V2104B
KM44V16104AK
KM416V256BL
4M DRAM EDO
KM48V2100B
44v16104
1mx1 DRAM DIP
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44c16104
Abstract: TC 32 DON
Text: KM44C16004B, 44C16104B CMOS DRAM 16M x4 b it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 16,777,216 x 4 bit Extended Data O ut Mode CMOS DRAMs. Extended Data O ut Mode offers high speed random access of memory cells within the sam e row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), package type (SOJ or
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KM44C16004B,
KM44C16104B
16Mx4
KM44C16004B
44C16104B
400mil
44c16104
TC 32 DON
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M53216
Abstract: 16Mx32-bit
Text: DRAM MODULE KM M53216004AK/A KG KMM53216004AK/AKG EDO Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung K M M 53216004A is a 16Mx32bits RAM high density memory module. The Dynamic Samsung -• Part Identification
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KMM53216004AK/AKG
16Mx4,
3216004A
16Mx32bits
M53216004AK/A
53216004AK
cycles/64ms
53216004AKG
1250mil)
M53216
16Mx32-bit
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