IRF230 Search Results

TO-254

Abstract: T0-204 IRF450 equivalent
Contextual Info: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS

250M

Abstract: IRF240
Contextual Info: electrical characteristics T q - 2 5 ° C (unless otherwise specified) CHARACTERISTIC [ off characteristics Drain-Source Breakdown Voltage IRF230/D86DN2 (VGS = 0V, lD = 250 ,uA) IRF231/D86EM2 Zero Gate Voltage Drain Current (Vps = Max Rating, VGs = 0V, T c = 25°C)

IRF230

Contextual Info: IRF230 TO–3 TO–204AA Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42)

IRF232

Abstract: IRF230 IRF231 IRF233 TB334
Contextual Info: IRF230, IRF231, IRF232, IRF233 Semiconductor 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

F233

Abstract: IRF230
Contextual Info: 7964142 k | 7WHS OGOSG^HSf SAMSUNG SEM ICON DU CTOR I N C _ 98D 0 5 0 9 4 _D T * 3 V l I "-CHANNEL POWER MOSFETS IRF230/231/232/233 FEATURES LOW RDS on Improved inductive ruggedness Fast switching times Rugged poiysilicon gate cell structure Low input capacitance

MTP20N10

Abstract: 1RF531
Contextual Info: NATL N-Channel Power MOSFETs Continued 2N67S5 2N6756 IRF130 IRF132 IRF133 IRF530 S 1-6 IRF532 IRF533 MTP20N10 2N6757 IRF230 IRF231 lD @ TC = 25 'C (A) •rD Tc = 100-C (A) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-2Û4AA (42) TO-204AA

IRF150 To220 package

Abstract: irf150 to220 IRFP240 xg32 ULTRA FAST RECOVERY RECTIFIERS to-220 irf64d to-3p 1500V IRF122 IRF123 IRF131
Contextual Info: FREDERICK COMPONENTS MIE 3> • 37n4ñS Q0D01b3 5 M F C I A CORTON CO M PA N Y C POWER MOSFETs P ART-N O IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF232

Contextual Info: IRF230, IRF231, IRF232, IRF233 Semiconductor 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate

irf230

Abstract: IRF2301 irf232
Contextual Info: IRF230, IRF231, IRF232, IRF233 S E M I C O N D U C T O R 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

sm 0038

Abstract: 250M IRF230 IRF231
Contextual Info: F U IRF230.231 D86DN2,M2 T 9.0 AMPERES 200,150 VOLTS Rd S ON = 0.4 n RELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

Equivalent IRF 44

Abstract: sony 2sj54 VN0109N3 irf 80 n BUZ44 VN0104N5 2SJ54 irf 44 n VN0108N2 VN0104N1
Contextual Info: Siliconix 1-1? f l CO CO COCO Ol o LL. U . t t ù i • ■ N M C O M «M O LL. U . IRF230 ■ IRF231 - IRF232 ■ IRF233 IRF630 ■ IRF631 - IRF632 ■ IRF633 200VMOSPOWER These power FETs are designed especially for switching regulators, power converters,

ZO 150

Abstract: dg1u IRF230 1RF232 IRF231 IRF232 IRF233 IRF23 ic l00a S101
Contextual Info: 01 J E 1 3fl7S0öl DG1Ü2Ö4 S | ~ 0 ^ 3 *9 -/I SOLID STATE 01E 18284 3875081 G E a ta n a a ra ro w e r M O S FE Ts IRF230, IRF231, IRF232, IRF233 File Number 1568 Power MOS Field-Effect Transistors N -CH A NN EL E N H A N C EM EN T MODE N-Channel Enhancement-Mode

IRF230

Contextual Info: IRF230 TO–3 TO–204AA Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42)

Contextual Info: MOTOROLA SE M IC O N D U C T O R TECHNICAL DATA IRF230 P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate T M O S This TM O S Power FET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid

SHD230303

Contextual Info: SENSITRON SEMICONDUCTOR SHD230303 TECHNICAL DATA DATA SHEET 698, REV. - DUAL HERMETIC POWER MOSFET N-CHANNEL œ œ œ œ 200 VOLT, 0.4 OHM, 9.0A MOSFET Fast Switching Low RDS on Equivalent to IRF230 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.

SHD230303

Abstract: IRF230
Contextual Info: SENSITRON SEMICONDUCTOR SHD230303 TECHNICAL DATA DATA SHEET 698, REV. - DUAL HERMETIC POWER MOSFET N-CHANNEL œ œ œ œ 200 VOLT, 0.4 OHM, 9.0A MOSFET Fast Switching Low RDS on Equivalent to IRF230 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.

IRF224

Abstract: irf244 THOMSON DISTRIBUTOR 58e d IRF222 IRF352 irf362 THOMSON 58E THOMSON 58E CASE OUTLINE IRF220 IRF221
Contextual Info: THOMSON/ HtXhtl S flE D ISTRIBU TOR □ □T D • TCSK International m s Rectifier Power MOSFETs Hermetic Package TO-3 N-Channel Part Number IRF223 IRF221 IRF233 IRF231 IRF243 IRF241 IRF253 IRF251 IRF222 IRF220 IRF232 2N6758 IRF230 IRF242 IRF240 IRF252 IRF250

Contextual Info: NATL This N-Channel Power MOSFETs Continued 2N6755 IRF130 IRF131 IRF132 By IRF133 Its IRF530 (71 IRF532 2N6757 2N6758 IRF230 IRF231 TC = 100-C (A) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-220 (37) TO-220 (37)

ED 83

Contextual Info: Government/ Space Products International [^Rectifier HEXFET, CECC Qualified — Europe N-Channel Types Basic Type IRF044 IRF120 IRF130 IRF140 IRF150 IRF220 IRF230 IRF240 IRF250 IRF244 IRF320 IRF330 IRF340 IRF350 IRF420 IRF430 IRF440 IRF450 VDS V RDS(on)

power 22D

Abstract: irf64d IRF740 IRFP240 IRFP450 bridge IRF350 IRF120 IRF122 IRF123 IRF130
Contextual Info: FRED ERICK COMPONENTS MIE 3> • 37n4ñS Q0D01b3 5 M FCI A CORTON COM PANY C POWER MOSFETs P ART-N O IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF232 IRF233

Contextual Info: IRF230 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)9.0 I(DM) Max. (A) Pulsed I(D)6.0 @Temp (øC)100 IDM Max (@25øC Amb)36 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55

IRF230R

Abstract: IRF231R IRF232R IRF233R
Contextual Info: _Rugged Power MOSFETs File N u m b er IRF230R, IRF231R, IRF232R, IRF233R 1999 Avalanche Energy Rated N-Channel Power M OSFETs 8.0A and 9.0A, 150V-200V rDs on = 0 .4 0 and 0.6CÌ N-CHANNEL ENHANCEMENT MODE D Features: • Single pulse avalanche energy rated

IRF230

Abstract: JANTX2N6758 JANTXV2N6758
Contextual Info: PD - 90334F IRF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758  HEXFET TRANSISTORS JANTXV2N6758 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 200V, N-CHANNEL Product Summary Part Number IRF230 BVDSS 200V RDS(on) 0.40Ω ID 9.0A  The HEXFET technology is the key to International

IRF 450 MOSFET

Abstract: IRF N-Channel Power MOSFETs IRF230 IRF n CHANNEL MOSFET MOSFET IRF230 IRF231 IRF233 IRF MOSFET 100A 200v IRF232 mosfet n channel irf
Contextual Info: 7964142 S A M SUNG SEM ICONDUCTOR,„IN C _98D 0 5094_ D T * 3 V l • • -HS D e | - “ :, 4LU. ! Q0GS0T4 i "-CHANNEL f IRF230/231Í232/233 POWER MOSFETS FEATURES • LOW RoS on • • • • • • • Improved inductive ruggedness Fast switching times