IRF350 Search Results

Contextual Info: This N-Channel Power MOSFETs z > Material National COOLFETsTM Semiconductor Copyrighted Case Style Pd W Tc = 25°C V D SS (V) Min l0 @ Tc = 25°C (A) Tc = 100°C (A) IRF350CF T0-204AE (42) T0-3P (43) T0-3P (43) TO-204AE (42) TO-3P (43) T0-3P (43) 150 400

IRF350

Abstract: IRF350 and its equivalent TB334 TA9399
Contextual Info: IRF350 Data Sheet March 1999 15A, 400V, 0.300 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,

Contextual Info: SENSITRON SEMICONDUCTOR SHD239504 TECHNICAL DATA DATA SHEET 1097, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 400 Volt, 0.3 Ohm, 9.0A MOSFET œ Low RDS on œ Electrically Equivalent to IRF350 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

SHD280504

Contextual Info: SENSITRON SEMICONDUCTOR SHD280504 TECHNICAL DATA DATA SHEET 4066, REV.- HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 400 Volt, 0.3 Ohm, 14A MOSFET œ Low RDS on œ Electrically Equivalent to IRF350 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

shd2184

Contextual Info: SENSITRON SEMICONDUCTOR SHD218504 TECHNICAL DATA DATA SHEET 1011, REV Formerly Part Number SHD2184/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 400 Volt, 0.3 Ohm, 9.0A MOSFET œ Low RDS on œ Equivalent to IRF350 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

SHD280504

Abstract: IRF350 IRF350 and its equivalent
Contextual Info: SENSITRON SEMICONDUCTOR SHD280504 TECHNICAL DATA DATA SHEET 4066, REV.- HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 400 Volt, 0.3 Ohm, 14A MOSFET œ Low RDS on œ Electrically Equivalent to IRF350 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

1RF350

Abstract: Transistor IRF 044 IRF3503 TRANSISTOR 2SC 635 08/bup 3110 transistor
Contextual Info: MOTOROLA SC I X S T R S /R F IM E D • MOTOROLA 005^75 ■i SEM ICONDUCTOR I 1 j IRF350 IRF351 IRF352 TECHNICAL DATA Part Number Voss 'DS on N-CHANNEL ENHANCEMENT-MODE SILICON GATE TM O S POWER FIELD EFFECT TRANSISTOR IRF350 400 V 0.3 a IRF351 350 V 0.3 n

IRF350

Abstract: IRF350 and its equivalent SHD219504
Contextual Info: SENSITRON SEMICONDUCTOR SHD219504 TECHNICAL DATA DATA SHEET 607, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 400 Volt, 0.3 Ohm, 9.0A MOSFET œ Low RDS on œ Equivalent to IRF350 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

Contextual Info: IRF350 2N6768 MECHANICAL DATA Dimensions in mm inches 39.95 (1.573) N-CHANNEL POWER MOSFET max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 1 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) VDSS ID(cont)

Contextual Info: • M 3 0 2 5 7 1 D 0 S 3 T 4 a 2 HARRIS 7 f l b ■ H A S IR F350/351/352/353 IRF350R/351R/352R/353R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package TO-2Q4AA • 13A and 15.0A, 350V - 400V • i"DS on) = ° -3 fi and 0 .4 fi

irf 3110

Abstract: IRF3503 irf350 IRf 334 IRf 92 0151 irf352 C055
Contextual Info: MOTOROLA SEM ICONDUCTOR IRF350 IRF351 IRF352 TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR These TMOS P o w e r FETs are d e sig n e d fo r h ig h voltage, high speed p o w e r s w itc h in g a p p lica tio n s such as sw itch in g regulators,

Contextual Info: SENSITRON SEMICONDUCTOR SHD219504 TECHNICAL DATA DATA SHEET 607, REV B HERMETIC POWER MOSFET N-CHANNEL FEATURES: 400 Volt, 0.3 Ohm, 9.0A MOSFET Low RDS on Equivalent to IRF350 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25 C UNLESS OTHERWISE SPECIFIED.

Contextual Info: SENSITRON SEMICONDUCTOR SHD218504 TECHNICAL DATA DATA SHEET 1011, REV Formerly Part Number SHD2184/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 400 Volt, 0.3 Ohm, 9.0A MOSFET œ Low RDS on œ Equivalent to IRF350 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

Contextual Info: I p| |"0 f f Q tÌ O D Q I Provisional Data Sheet No. PD-9.339E IOR Rectifier JANTX2N6768 HEXFET POWER MOSFET JANTXV2N6768 [REF:MIL-PRF-19500/543] [GENERIC :IRF350] N -C H A N N E L 400 Volt, 0.300Q HEXFET H E X F E T technology is the key to International

IRF350

Abstract: SHD218504
Contextual Info: SENSITRON SEMICONDUCTOR SHD218504 TECHNICAL DATA DATA SHEET 1011, REV Formerly Part Number SHD2184/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 400 Volt, 0.3 Ohm, 9.0A MOSFET • Low RDS on • Equivalent to IRF350 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED.

IRF3530

Abstract: IRF350 IRF351 IRF352 F-352 IRF353 IRF-352
Contextual Info: D E | BÖ7SDÜ1 OGlöBD11] t, | ~ Ql 387 508 1 G E S O L I D S T A T E Standard Power MOSFETs 0 1E 18309 _ IRF350, IRF351, IRF352, IRF353 DT-?File Number 1826 Power M O S Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors

IRF350

Abstract: LDR Cds IRF351 F352 IRF352 IRF353
Contextual Info: - Standard Power MOSFETs File Number IRF350, IRF351, IRF352, IRF353 1826 Power M O S Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE D o 13 A and 15 A, 350 V - 4 0 0 V rDs on = 0.3 Q and 0.4 O

IRF3503

Abstract: IRF350 IRF351 D86FQ2 350VOLTS
Contextual Info: IM ÜF FIELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. IRF350.351 D86FQ2.Q1 15 AMPERES

Contextual Info: SENSITRON SEMICONDUCTOR SHD219504 TECHNICAL DATA DATA SHEET 607, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 400 Volt, 0.3 Ohm, 9.0A MOSFET œ Low RDS on œ Equivalent to IRF350 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

Contextual Info: PD - 90339F IRF350 JANTX2N6768 JANTXV2N6768 [REF:MIL-PRF-19500/543] 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF350 BVDSS 400V RDS(on) 0.300Ω ID 14A The HEXFETtechnology is the key to International

2N6768

Abstract: IRF350
Contextual Info: IRF350 2N6768 MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) 1 VDSS ID(cont)

irf350

Abstract: IRF350N EC075
Contextual Info: * 7m„ M g»(I[L[I(glT[KMO(g§ /= T SGS-THOMSON IRF350 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS(on IRF350 400 V 0.3 Q 15 A • HIGH VOLTAGE - FOR OFF-LINE SMPS • HIGH CURRENT - FOR SMPS UP TO 350W • ULTRA FAST SWITCHING - FOR OPERATION

Contextual Info: IRF350 2N6768 MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) 1 VDSS ID(cont)

IRF350R

Abstract: IRF350 IRF351R IRF352R IRF353R transistors bipolar
Contextual Info: _ Rugged Power MOSFETs File Num ber 2006 IRF350R, IRF351R, IRF352R, IRF353R Avalanche Energy Rated N-Channel Power MOSFETs 13A and 15A, 350V-400V ros on = 0 .3 0 and 0 .4 0 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated