AS7C3512 Search Results

Contextual Info: Advance information •■ AS7C3512K16P AS7C3512K18P Il II 3.3V 512K- 16 ‘18 pipeline burst synchronous SRAM Features • • • • • • • • • Organization: 5 2 4 ,2 8 8 w ord s x 16 or 18 bits Fast clock speeds to 166 MHz in LVTTL/LVCMOS Fast clock to data access: 3 . 5 / 3 . 8 / 4 / 5 ns

AS7C3512-15PC

Abstract: AS7C3512-25PC AS7C3512-12JC AS7C3512-12PC alliance promotion 60465
Contextual Info: High Performance 64Kx8 3.3V CMOS SRAM AS7C3512 AS7C3512L Low voltage 64K×8 CMOS SRAM Preliminary information Features • Organization: 65,536 words × 8 bits • Single 3.3 ±0.3V power supply • 5V tolerant I/O specification • High speed - 12/15/20/25/35 ns address access time

AS7C3512L15PC

Contextual Info: H igh Perform ance •■ AS7C3512 64KX8 3.3V II AS7C35 12L CMOS SRAM Low voltage 64K x8 CMOS SRAM Preliminary information Features • O rg a n iz a tio n : 6 5 ,5 3 6 w o r d s x 8 b its • E qual access a n d cycle tim e s • S in gle 3 .3 ± 0 .3 V p o w e r su p p ly

Contextual Info: Advance information •■ I l AS7C3512K16Z AS7C3512K18Z A 3.3V 5 1 2K x 1 6 /1 8 synchronous burst SRAM with ZBT1 Features • • • • • • • • • • • • • • • • • • • Organization: 524,288 words x 16 or 18 bits ZBT architecture for efficient bus operation

Contextual Info: A Advance information •■ I l AS7C3512K16Z AS7C3512K18Z 3.3V 512Kx 16/18 synchronous burst SRAM with ZBT' Features • ZZ sleep m ode for lower power • Organization: 5 2 4 ,2 8 8 words x 16 or 18 bits • ZBT architecture for efficient bus operation

AS7C3512-15PC

Contextual Info: High-Performance 64Kx8 3.3V CMOS SRAM PI AS7C3512 AS7C3512L PR E LIM IN A RY Low Voltage 64KxS CMOS SRAM Common I/O |F E A T U R E S_ • Organization: 65,536 words x 8 bits • Equal access and cycle times • Single 3.3 ±0.3V power supply

AS7C3512-20JC

Abstract: AS7C3512-20PC AS7C3512-25JC AS7C3512-25PC
Contextual Info: High Performance 64Kx8 3.3V CMOS SRAM AS7C3512 Low voltage 64K×8 CMOS SRAM Features • Organization: 65,536 words × 8 bits • Single 3.3 ±0.3V power supply • High speed - 20/25 ns address access time - 5/6 ns output enable access time • Very low power consumption

CAW-18

Abstract: megatron
Contextual Info: High-Performance 64Kx8 3.3V CMOS SRAM PI ^ ¿ 9 ^ AS7C3512 AS7C3512L P R E L IM IN A R Y Low Voltage 64Kx8 CMOS SRAM Common I/O |F E A T U R E S_ • Organization: 65,536 words x 8 bits • Equal access and cycle times • Single 3.3 ±0.3V power supply

AIA4M

Abstract: VW99
Contextual Info: Advance informatio AS7C3512K16Z AS7C3512K18Z •3V 5 1 2 K x l 6 / 1 8 synchronous burst SRAM with ZBT Features • • • • • • • • • • ZZ sleep mode for lower power Byte write enables Single R/ W control pin Gock enable for operation hold

DRAM 256 X 1, 18 PDIP

Abstract: 64K X 4 SRAM mmui
Contextual Info: A Contents Fast SRAM Low Voltage Fast SRAM Short Form 1995 AS7C164 8K x 8 3 AS7C256 32K x 8 4 AS7C259 32K x 9 5 AS7C512 64K x 8 6 AS7C1024 128K x 8 300/400 mil 7 AS7C1028 256K x 4 400 mil 8 AS7C3256 32K x 8 3.3V 9 AS7C3512 64K x 8 3.3V 10 AS7C31024 128K x 8

Contextual Info: H ig h P e r f o r m a n c e 64K X 8 3.3V CM OS SRAM A S 7 C 3 5 12 X Low voltage 6 4 K x 8 CM O S SRAM • O rganization: 6 5 ,5 3 6 w ords x 8 bits • Single 3.3 ± 0.3V p o w er supply • H igh speed - 2 0 /2 5 ns address access tim e - 5 / 6 ns o u tp u t enable access tim e

KM 3502 P

Abstract: km 3512
Contextual Info: TTL-com patible, three-state 1 /O Ideal for cache and portable co m p u tin g - 75% p o w er red u ctio n d u rin g CPU idle m ode 3 2 -p in JEDEC standard packages - 300 m il PDIP and SOJ ESD p ro tectio n > 2 0 0 0 volts Latch-up cu rren t > 200 mA • O rganization: 6 5 ,5 3 6 w o rd s x 8 bits

AS4C256K16F0-60JC

Abstract: AS7C164-20PC AS7CI64-20JC AS4LC1M16ES-50TC 120TC 28K1 AS4C1440S 1SPC AS29F040-120TC as7c3
Contextual Info: í U' u i M 11; ! 1Ì ! ! i r 1 ¡ l i ü ’! 4 • -'¡si. í J Mij ! ; , t ‘ i M U I : i Synchronous SRAM part numbering system AS7C X XXXX Voltage: Blin k cram 3 25 18 (X -X X XX = 5V C M O S =3.3V CMOS =2.5V CMOS = 1.8V CMOS Density and organization

siti

Abstract: nas77 3512K
Contextual Info: Features • • • • • • • • • Organization: 5 2 4 ,2 8 8 w ords x 16 or 18 bits Fast clock speeds to 166 MHz in LVTTL/LVCMOS Fast clock to data access'. 3 . 5 / 3 . 8 / 4 / 5 ns Fast UE access time: 3 . 5 / 3 . 5 / 3 . 8 / 4 ns Fully synchronous register-to-register operation

SRAM 64KX8 5V

Contextual Info: A Product Guide "641 Ali densities is bits TÎÎT 256K- —I.8V /2.S V /3.3V — 64KX16 ! -3.3V 32ÏX 8 asynchronous asynchronous in x: 8Kx8 I 32KX8 64KX8 32KX16 128KX8 I j!28gxl6| 64KX16 64KX8 128KX8 64KXJ6 32XX16 -3.3V 32KX32 synchronous Memories- -ED O

SRAM 64KX8 5V

Abstract: 128U K SRAM 512*8 SRAM 3.3v 1Mx8 SRAM edo dRAM AS7C40
Contextual Info: Pagenumber Produci Cross references. Il Ordering information. 13 AS7C164

Contextual Info: H i ” ¡ i !> r i ' ! i i i - 4 i \ -./• ( \ U 'is -, i; w iii u i i í í J íjl A 4 K a 8 l M U 'i ,'ili H i Features • T T L -co m p atib le, th re e -s ta te I / O • Ideal fo r cach e a n d p o rta b le c o m p u tin g • O rg a n iz a tio n : 6 5 ,5 3 6 w o r d s x 8 b its

AS4C1M16FS

Abstract: 1Mx16 flash 3.3v 1Mx8 SRAM
Contextual Info: Product number AS29F002 256Kx8 5V boot sector Flash. 433 AS7C181024LL 128Kx8 1,8V Intelliwatt SRAM. 129 j4S29F03 0 128KX8 SV equal sector Flash. 423

Contextual Info: Hi ^ l i Ft r i u n i i , n u r g . 6 4 k x H i. iV C M O S ' S KAM P | AS 7 C î S I 1 \ S 7 i S I 21 A I m\ \ il 11(j(j i1 64KXX CMOS SRAM Prelim inary inform ation • • • • O rganization: 6 5 ,5 3 6 w o rd s x 8 bits Single 3.3 ±0.3V pow er supply

Contextual Info: H ig h P e r f o r m a n c e 6 4 K X 8 3 .3 V C M O S SR A M u II A S7C 3512 A S7C 3512L A Low voltage 6 4 K x 8 CMOS SRAM Preliminary information • • • • Organization: 65,536 w ords x 8 bits Single 3.3 ±0.3V pow er supply 5V tolerant 1/O specification

3d graphics

Contextual Info: H .irl lisi ¡ i l ” \ l | l i i i l ) l i ( ni pur l l i s ! i i uj Product number Product density/description . Page number AS29F010 128Kx 8 equal sector Flash. 237

AS4C2M8

Contextual Info: A Till ! ni T .i h I e ( *I i i m i e il i s L (h i i t 'l l i \ Page number Product guide. 3 Cross

EPM5128LC

Abstract: EPM5128GC epm5064lc-1 EPM5128LC1 59628867809r 5962-8984106LX EPM5128GI 7C19945DMB EPM5130GC-1 5962-8867812rx
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 5962-8753903LX 5962-8753902LX CY21L49-55C CY21L49-45C CY7C281 CY7C281A 5962-8863701LX 5962-8753902LX CY6116A-45C CY6116A-35C CY7C286 CY27H512 5962-8867003LX 5962-8867002LX CY6116A-55C CY6116A-45C

Z101

Contextual Info: 64 K x8 3.3V SRAM ^ AS7C35I2 Features Logic Block Diagram ♦ High Performance CMOS: tAA=12-35 ns ♦ Fast OE access: t0 E=3-6 ns ♦ Very low power - 250 mW @ 100 MHz - 9 mW @ 10 MHz standby - 1.8 mW @ 10 MHz standby: L version ♦ Automatic CE1/CE2 power down