AS29F080 Search Results

Contextual Info: High performance 1Mx8 5V CMOS Flash EEPROM AS29F080 1 Megabit×8 CMOS Flash EPROM Preliminary information Features • Organization: 1M×8 • Sector architecture • Low power consumption - 30 mA maximum read current - 50 mA maximum program current - 1 µA typical standby current RESET = 0

Contextual Info: Preliminary information •■ AS29F080 A 5V 1Mx 8 CM O S Flash EEPROM Features • Organization: 1Mx 8 • Sector architecture - Sxteen 64Kbyte sectors - Equal sector architecture - Erase any combination o f sectors or full chip • Sngle 5.0±0.5V pow er supply for read/ write operations

AS29F080

Abstract: AS29 29F080 29fu
Contextual Info: Preliminary information •■ AS29F080 1 5V 1M x 8 C M O S Flash EEPROM Features • O rg an izatio n : 1M x 8 • Sector arch itectu re - Sixteen 64K b y te sectors - Equal secto r arc h ite ctu re - Erase an y c o m b in a tio n o f sectors o r full chip

LTS 547 EH

Contextual Info: Preliminary inform ation AS29F080 II 5V 1M x 8 CMOS Flash ÜPROM Features • O rganization: 1M x 8 • Sector architecture - Sixteen 64K byte sectors - Equalsectorarchitecture - Erase any com bination o f sectors o r fu ll chip • Single 5 D± 0 5 V pow e r supply ib rread /w rite opeiations

Contextual Info: Preliminary information •■ AS29F080 II 5V 1Mx 8 CMOS Flash EEPROM Features • O rganization: 1M x 8 • Sector architecture - Sixteen 64K byte sectors - Equal sector architecture - Erase any com bination o f sectors or full chip • Single 5.0± 0.5V po w er supply for re a d /w rite operations

29F080

Abstract: S29F080
Contextual Info: Preliminary information Features • O rg a n iz a tio n : 1M x 8 • S ecto r a rc h ite c tu re - Sixteen 64K byte sectors - Equal sector architecture - Erase any com bination o f sectors or full chip • Single 5 .0 ± 0 .5 V p o w e r s u p p ly f o r r e a d / w r ite o p e ra tio n s

AS4C256K16F0-60JC

Abstract: AS7C164-20PC AS7CI64-20JC AS4LC1M16ES-50TC 120TC 28K1 AS4C1440S 1SPC AS29F040-120TC as7c3
Contextual Info: í U' u i M 11; ! 1Ì ! ! i r 1 ¡ l i ü ’! 4 • -'¡si. í J Mij ! ; , t ‘ i M U I : i Synchronous SRAM part numbering system AS7C X XXXX Voltage: Blin k cram 3 25 18 (X -X X XX = 5V C M O S =3.3V CMOS =2.5V CMOS = 1.8V CMOS Density and organization

SRAM 64KX8 5V

Contextual Info: A Product Guide "641 Ali densities is bits TÎÎT 256K- —I.8V /2.S V /3.3V — 64KX16 ! -3.3V 32ÏX 8 asynchronous asynchronous in x: 8Kx8 I 32KX8 64KX8 32KX16 128KX8 I j!28gxl6| 64KX16 64KX8 128KX8 64KXJ6 32XX16 -3.3V 32KX32 synchronous Memories- -ED O

SRAM 64KX8 5V

Abstract: 128U K SRAM 512*8 SRAM 3.3v 1Mx8 SRAM edo dRAM AS7C40
Contextual Info: Pagenumber Produci Cross references. Il Ordering information. 13 AS7C164

AS4C1M16FS

Abstract: 1Mx16 flash 3.3v 1Mx8 SRAM
Contextual Info: Product number AS29F002 256Kx8 5V boot sector Flash. 433 AS7C181024LL 128Kx8 1,8V Intelliwatt SRAM. 129 j4S29F03 0 128KX8 SV equal sector Flash. 423

29F080

Contextual Info: High p erform an ce lM x 8 5V CMOS Flash EEPROM •■ II II A S 29F080 I \ f c j j a h i i x 8 CMOS Flash E P R O M Preliminary information Features • Organization: 1MX8 • Sector architecture • Low power consumption - 3 0 mA m axim um read current - SO mA m axim um program current

pic16f877p

Abstract: m861 ATmel 750 24c04 atmel 620 24C64 PH29EE010 Siemens M841 MM29F040P-XX temic 5557 D27C010A HN462732G
Contextual Info: P801 Device Support List Version 6.6 Please consult device specific information at the end of this list. Stag Programmers Ltd. Silver Court, Watchmead, Welwyn Garden City, Herts AL7 1LT, U.K. Tel +44 1707 332148 Fax +44 1707 371503 sales@stag.co.uk support@stag.co.uk

29F080

Abstract: 29F080-90 S-12 AS29F080
Contextual Info: H igh p erform ance •■ A S29F080 IHI 1MX8 5V CMOS Flash EEPROM 1 Mcjjcihil x R C M O S F lash E P R O M Prelim inary inform ation Features • Organization: 1MX8 • Sector architecture • Low pow er consum ption - 30 mA m a x im u m rea d c u rre n t