Untitled
Abstract: No abstract text available
Text: BDT65F; BDT65AF BDT65BF; BDT65CF PHILIPS INTERNATIONAL SbE 7110flSb 00435^0 4Sci M P H I N T ~ 33 SILICON DARLINGTON POWER TRANSISTORS N PN silicon darlington power transistors in a S O T 1 8 6 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.
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BDT65F;
BDT65AF
BDT65BF;
BDT65CF
7110flSb
BDT65F
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AB marking code diode
Abstract: BFR101B BFR101A
Text: 7110fl£b G O b T l b M 435 • P H I N BFR101A BFR101B N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR S ym m etrical n-channel silicon ju n c tio n fie ld -e ffe c t tran sisto r, designed p rim a rily fo r use as a source fo llo w e r w ith the in p u t protected against successive voltage surges by a fo rw a rd and reverse integrated
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BFR101A
BFR101B
BFRT01B
AB marking code diode
BFR101B
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BT153
Abstract: TAG thyristor Thyristor TAG thyristor TAG 13 BT153 fast turn off philips thyristor 239 thyristor TRIGGER PULSE TRANSFORMER 7Z82062
Text: PHILIPS INTERNATIONAL SflE J> 7110fl2t, 0053035 301 • PHIN B l iby _y F A S T TURN-OFF TH YR IS TO R Glass-passivated fast-turn-off thyristor in a T 0 -2 2 0 A B envelope, intended fo r use in inverter, pulse and switching applications. Its characteristics make the device extremely suitable for use in regulator,
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7110fl2t,
T0-220AB
T0-220AB.
BT153
TAG thyristor
Thyristor TAG
thyristor TAG 13
BT153 fast turn off
philips thyristor 239
thyristor TRIGGER PULSE TRANSFORMER
7Z82062
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MCD288
Abstract: The Diode with Package Outlines 1993 SOT96A 1545A pulse to sinewave convertor DDSS431 TDA1545A TDA1545AT
Text: PHILIPS INTERNATIONAL bOE D • 7110fl2b D O S S ^ S 51b « P H I N 'T ' Philips Preliminary specification Stereo continuous calibration DAC TDA1545A FEATURES GENERAL DESCRIPTION • Space saving package S08 or DIL8
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711Dfl2b
16-bit
MCD288
The Diode with Package Outlines 1993
SOT96A
1545A
pulse to sinewave convertor
DDSS431
TDA1545A
TDA1545AT
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BUK10B-50US
Abstract: philips ldh d6506 BUK106-50L BUK106-50S buk106
Text: bSE » PHILIPS INTERNATIONAL • 7110fl2b D0b3flbS 2TM BiPHIN Product Specification Philips Semiconductors PowerMOS transìstor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic
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7110fl2b
BUK106-50L7S
BUK106-50LP/SP
BUK106-50L/S
BUK106-50I7S
BUK10B-50US
philips ldh
d6506
BUK106-50L
BUK106-50S
buk106
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ltd133
Abstract: 7 segments display philips LTD133F-21 12 pin 7 segment clock Liquid Crystal 12 pin 4 digit 7 segment display
Text: PHILIPS INTERNATIONAL Data sheet status Product specification date of issue July 1990 . bOE 7110flSb 0 D 5 7 0 2 5 7' 4 LTD133 Ü51 IPHIN /S t Liquid crystal display DEVICE DESCRIPTION The LTD133 is a 3 1/2-digit 7 segment clock display with AM and PM functions. It is designed for use with the
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LTD133
7110flSb
0D57025
LTD133
PCF1175
7Z22271
LTD133F-21
LTD133F-21
7 segments display philips
12 pin 7 segment clock Liquid Crystal
12 pin 4 digit 7 segment display
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BUK426-100B
Abstract: transistor BU 110 BUK426-100A
Text: Philips Components Data sheet status Product specification date of issue March 1991 PHILIPS 7 - 3 ^ -/ / B U K 4 2 6 - 1OOA/B PowerMOS transistor 5bE T> INTERNATIONAL 7110fl2t 0044120 flSD I_ I GENERAL DESCRIPTION N-channel enhancement mode
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BUK426-1OOA/B
7110fl2t
D0441EG
OT199
-100A
-100B
BUK426-100B
transistor BU 110
BUK426-100A
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NDS 40-20
Abstract: BUK437-500B DIODE BB2
Text: PHILIPS INTERNATIONAL fc.5E D m 7110flSb □□t.3c121 RS3 • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711002b
BUK437-500B
NDS 40-20
BUK437-500B
DIODE BB2
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25CC
Abstract: AM2952 MB2052 MB2052B
Text: T -5 2 ~ 3 -£ S Philips Semiconductors Advanced BiCMOS Products Objective specification Dual octal registered transceiver 3-State PHILIPS INTERNATIONAL FEATURES • StE D • 7110fl2fc. □03clclll 7S3 H P H I N QUICK REFERENCE DATA CONDITIONS T«ni> = 25CC; GND = 0V
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16-bit
AM2952
500mA
MB2052
25CC
MB2052B
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tam s8
Abstract: C101 LTA343F-11 LTA343R-11
Text: PHILIPS INTERNATIONAL Data sheet status Pro du ct specification date of issue J u ly 1990 bOE D I 7110flSb 0 0 5 7 G 1 3 30T LTA343 Liquid Crystal Display QUICK REFERENCE DATA DEVICE DESCRIPTION The LTA343 is a 40-character, 2-line dot matrix display. Typical applications include hand held equipment and
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LTA343
7110flSb
0057G13
LTA343
40-character,
160x27
7110a2b
tam s8
C101
LTA343F-11
LTA343R-11
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transistor tt 2222
Abstract: Trimmer 10-60 pf transistor h 1061 15 w RF POWER TRANSISTOR NPN bly87c IEC134 yl 1060
Text: PHILIPS INTERNATIONAL b SE D • 7110flSb GübBSt.3 «PHIN BLY87C J V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and
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711002b
BLY87C
transistor tt 2222
Trimmer 10-60 pf
transistor h 1061
15 w RF POWER TRANSISTOR NPN
bly87c
IEC134
yl 1060
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SL 100 NPN Transistor
Abstract: blt91 International Power Sources ferroxcube wideband hf choke Philips 4312 020 TRANSISTOR SL 100 of transistor sl 100 sl 100 transistor
Text: PHILIPS INTERNATIONAL bSE D B 7110fl5Li DOLEb71 0 4^1 • PHIN BLT91/SL _ U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in handheld radio stations in the 900 MHz communications band.
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00L2b71
BLT91/SL
OT-172D)
7110fl2b
D0bSb77
SL 100 NPN Transistor
blt91
International Power Sources
ferroxcube wideband hf choke
Philips 4312 020
TRANSISTOR SL 100
of transistor sl 100
sl 100 transistor
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7FLU
Abstract: pin configuration of i3 processor FM SOUND PROCESSOR TDA3857 IEC134 TDA3856 TDA3858 SAW-Filter
Text: INTEGRATED CIRCUITS S K l i i T TDA3857 Quasi-split sound processor with two FM demodulators Product specification Supersedes data of October 1990 File under Integrated Circuits, IC02 June 1994 Philips Semiconductors PHILIPS PHILIPS V j? 7110fl2b D07fl00S T27 •
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TDA3857
7110fl2b
D07fl00S
TDA3856
TDA3858
7FLU
pin configuration of i3 processor
FM SOUND PROCESSOR
TDA3857
IEC134
TDA3856
TDA3858
SAW-Filter
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b57 diode
Abstract: M3245 M3244 diode 1123 07s BR211 BR211-100 M3243 BI 1123 M324
Text: 5bE D • 7110flSb 0G410 bD ÛÔ4 D E V E LO P M E N T DATA IPHIN T -M -2 L 3 - BR211 SERIES T h is data sheet contains advance Inform ation and specifications are subject to change w ith o u t notice. PHILIPS 5bE D ^ INTERN A T I O N A L UN BREAKOVER DIODES
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7110flSb
0G410bD
BR211
BR211-100
b57 diode
M3245
M3244
diode 1123 07s
M3243
BI 1123
M324
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BUK452-100B
Abstract: BUK452-100A T0220AB
Text: PHILIPS INTERNATIONAL bSE D • 7110fl2b DDbHOBl SSI « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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7110fl2b
BUK452-100A/B
T0220AB
BUK452-100B
BUK452-100A
T0220AB
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LHi 874
Abstract: LHi 888 sp1191 HP611 SAA7194 APER XD7 video scaler SAA7186 SAA7191B VR06
Text: INTEGRATED CIRCUITS DATA SHEET S A A 7 1 9 4 Digital video decoder and scaler circuit DESC Product specification Philips Semiconductors April 1994 I ««y « f f PHILIPS This_Material Copyriqhted By Its Respective Manuf actjixer • 7110fldb aG7*H04 lib ■
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SAA7194
007clcÃ
LHi 874
LHi 888
sp1191
HP611
SAA7194
APER XD7
video scaler
SAA7186
SAA7191B
VR06
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RZ2731B60W
Abstract: tRANSISTOR 2.7 3.1 3.5 GHZ cw
Text: • 3 3 - 1 3 RZ2731B60W PHILIPS INTERNATIONAL SbE D 7110fl2ti 004Li57ö OflS M P H I N PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power am plifier w ith a frequency range o f 2.7 to 3.1 GHz.
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RZ2731B60W
711002b
004b5Ã
RZ2731B60W
tRANSISTOR 2.7 3.1 3.5 GHZ cw
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MX0912B250Y
Abstract: 33-AS IEC134 015 capacitor philips
Text: Data shaat •tatua data of Issu* HILXPS MX0912B250Y Preliminary specification NPN silicon planar epitaxial microwave power transistor June 1992 SbE D INTERNATIONAL • 7110fl2b Ü04b34fc, 7Q3 H P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high
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33-AS"
MX0912B250Y
G04b34b
T-33-Ã
711Dfl2b
004b352
0QMb43?
MX0912B250Y
33-AS
IEC134
015 capacitor philips
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TRANSISTOR BO 344
Abstract: TRANSISTOR BO 341 tny 175 BUK455 BUK455-100A BUK455-100B T0220AB data transistor 1650
Text: PHILIPS INTERNATIONAL bSE D • 7110fl2b ODbMOfll 067 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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7110flSb
BUK455-100A/B
T0220AB
BUK455
-100A
-100B
TRANSISTOR BO 344
TRANSISTOR BO 341
tny 175
BUK455-100A
BUK455-100B
data transistor 1650
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BLX13
Abstract: BLX13A C 3311 transistor HF band power amplifier philips 3h1 transistor f PH ON 823 philips Fxc 3 b SOT-56 transistor c 1971
Text: II PHI L IP S I N T E R N A T I O N A L MAINTENANCE TYPE MIE B J> 7110flSb O D E 7 7 C H 2 D P H I N II BLX13 H.F./V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for s.s.b. in class-A and AB and in f.m. transmitting appli cations in class-C with a supply voltage up to 28 V. The transistor is resistance stabilized and tested
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711005t.
BLX13
r-33-//
BLX13
BLX13A
C 3311 transistor
HF band power amplifier
philips 3h1
transistor f
PH ON 823
philips Fxc 3 b
SOT-56
transistor c 1971
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SOT227B package
Abstract: mb 428 mb 428 ic data ESM4045A ESM4045D SOT227A 4045D
Text: PHILIPS INTERNATIONAL 45E ]> 7110fl2ti 0031233 T M P HIN ESM4045A V ESM4045D(V) T '- 3 3 - d Q SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives, converters, switch mode power supplies (SMPS) and uninterruptable power supplies (UPS).
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711082b
ESM4045A
lESM4045D
4045D
ICsat/50
Bon11
Csat/50;
711002b
SOT227B package
mb 428
mb 428 ic data
ESM4045D
SOT227A
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BY705
Abstract: BY706
Text: 5bE PHILIPS D 7110flEb 0G4O5O5 SDT « P H I N I N T ERNATIONAL BY705 BY706 SbE ]> OJ SILICON EHT SOFT-RECOVERY RECTIFIER DIODES EHT rectifier diodes in glass envelopes intended for use in general purpose high-voltage applications. The devices feature non-snap-off characteristics. Because of the small envelope, the diodes should be
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7110flEb
BY705
BY706
BY706
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2N3020
Abstract: 2N3019
Text: 2N3019 2N3020 JL PHILIPS INTERNATIONAL SbE T> I 7110flSb D0L»2b40 37^ • PHIN 7= 35" SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes intended for use as amplifiers and in switching circuits. QUICK REFERENCE DATA Collector-base voltage open emitter
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2N3019
2N3020
7110flSb
711002b
00M2fci42
2N3020
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OM976
Abstract: 0071547 philips hybrid OM976
Text: 7110fl2b 0 0 7 1 S 4 3 Philips Semiconductors TDM M P H I N Preliminary specification Video output amplifier FEATURES OM976/1 PINNING • DC coupled video amplifier for cathode drive, with a positive-going video input. 1 input • Low internal thermal resistance
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7110a2fc.
OM976/1
OM976/1
OM976
0071547
philips hybrid OM976
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