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    LM98725CCMT/NOPB Texas Instruments 3 Ch 16-Bit 81 MSPS AFE w/ LVDS/CMOS Output & Integrated CCD/CIS Sensor Timing Generator 56-TSSOP 0 to 70 Visit Texas Instruments Buy
    LM98725CCMTX/NOPB Texas Instruments 3 Ch 16-Bit 81 MSPS AFE w/ LVDS/CMOS Output & Integrated CCD/CIS Sensor Timing Generator 56-TSSOP 0 to 70 Visit Texas Instruments Buy
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    Kyocera AVX Components 1825CC154KAT1A

    CAP CER 0.15UF 630V X7R 1825
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    Kyocera AVX Components TAP225M025CCS

    CAP TANT 2.2UF 20% 25V RADIAL
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    CAP TANT 3.3UF 20% 25V RADIAL
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    Kyocera AVX Components TAP476K025CCS

    CAP TANT 47UF 10% 25V RADIAL
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    Kyocera AVX Components TAP225K025CCS

    CAP TANT 2.2UF 10% 25V RADIAL
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    25CC Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    25CC13 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    25CC13 Toshiba Standard Rectifier Scan PDF
    25CC13 Toshiba Standard Rectifiers / Fast Recovery Rectifiers / Misc Rectifiers / HEDs Scan PDF

    25CC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mitsumi tuner

    Abstract: mitsumi tv tuner Tv tuner Diagram vhf uhf tuner UVE25-EW59D Mitsumi vhf UHF/VHF TV Tuner mitsumi vhf tuner VHF Series 69ch
    Text: MITSUMI Compact 25cc Tuner for TV, VCR UVE25-EW59D, UE25-B57D TV/VCR Tuners FEATURES 1. A small shape of industrial standard type. 2. With PLL IC (I2C bus). 3. Power source voltage +B=5V. 4. IF output corresponds to an unbalanced output. 5. Used one IC (MUX+OSC+PLL).


    Original
    PDF UVE25-EW59D, UE25-B57D UVE25-EW59D UVE25 S33ch) mitsumi tuner mitsumi tv tuner Tv tuner Diagram vhf uhf tuner UVE25-EW59D Mitsumi vhf UHF/VHF TV Tuner mitsumi vhf tuner VHF Series 69ch

    25CC

    Abstract: AM2952 MB2052 MB2052B
    Text: T -5 2 ~ 3 -£ S Philips Semiconductors Advanced BiCMOS Products Objective specification Dual octal registered transceiver 3-State PHILIPS INTERNATIONAL FEATURES • StE D • 7110fl2fc.03clclll 7S3 H P H I N QUICK REFERENCE DATA CONDITIONS T«ni> = 25CC; GND = 0V


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    PDF 16-bit AM2952 500mA MB2052 25CC MB2052B

    BU426AF

    Abstract: T03P BU908F 2SA1301F 2SB817F 2SC3280F 2SD1047F 2SD1426F BU426F BU508AF
    Text: T0-3P Fully isolated Plastic Package Transistors TO BE MOUNTED WITH SILICONE GREASE ON THE BACK SIDE, ENSURING BACK SIDE HOLES FILLED. Maximum Ratings Type No. Pola­ rity Electrical Characteristics Ta = 25CC, Unless Otherwise Specified " cbo ^CEO ^EBO PD


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    PDF 2SA1301F 2SA13O2F0 2SB817F 2SC3280F TIP146F TIP147F TIP2955F TIP2955HVF TIP3055F TIP3055HVF BU426AF T03P BU908F 2SD1047F 2SD1426F BU426F BU508AF

    FLM6472-12D

    Abstract: FLM4450-4B/D FLM3742-12D FLM6472-8C FLM3742-4B FLM4450-25D FLM7177-4C FLM6472-4C FLM5964 FLM5964-14/D
    Text: - 136 - & a £ tt € ffl iÉ m ís A ñ * K V * té £ 1 (V) (A) M V P d/P ch * I gss (max) (A) « Vg s (V) (Ta=25cC ) (min) (raax) Vd s (A) (V) (A) (rain) (max) Vd s (V) (V) (V) Id (A) (rain) (S) Vd s (V) Id (A) FLM3742-12D a ± ii C-Band PA GaAs N D


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    PDF FLM3742-12D FLM3742-14/D FLM3742-25D FLM3742-4B/D FLM3742-8B/D FLM4450-12D GaAs-14/D 44dBm, FLM6472-25D 36dBm, FLM6472-12D FLM4450-4B/D FLM3742-12D FLM6472-8C FLM3742-4B FLM4450-25D FLM7177-4C FLM6472-4C FLM5964 FLM5964-14/D

    2SK1383

    Abstract: 2SK1380 IM 337 2SK1379 2SK1388 IM617 2SK1381 2SK1390 2SK1382 2SK1384
    Text: - 100 - m % *± £ & m ft it f € t ? * K Ü A V fé Ê V* I* * ft * (V) (A) 5 X ft P d /P ch <K) Igss (max) (A) Vg s (V) m M Id s (min) (max) Vd s (A) (A) (V) (Ta=25cC) 'te (min) (max) Vd s (V) (V) (V) £m (min) (typ) Vd s (S) (S) (V) Id (A) Id (A)


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    PDF 2SK1379 2SK1380 2SK1381 2SK1382 2SK1383 100nstyp 2SK1400 2SK1400A 155nstyp 2SK1383 IM 337 2SK1379 2SK1388 IM617 2SK1381 2SK1390 2SK1384

    2SB1232

    Abstract: 2SB1240 2SB1255 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229
    Text: - 82 - 5 Ta=25cC, *EPteTc=25'C Vcso Vc e o (V) (V) fu (A) (W) fó 4# tt (Ta=25'C) [*EP (3typ{È] hp Pc* (max) (uA) <W) VcB (V) (min) (max) Vc e (V) Ic/ I e (A) (max) (V) ' , —' (V) le (A) Ib (A) PD -70 -60 -4 2 20 -100 -40 2000 -2 -2 -1.5 -2 -2 -0.004


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    PDF 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229 2SD1891 O-220Fa) 2SB1251 2SB1232 2SB1240 2SB1255 2SB1223 2SB1225 2SB1226

    2sc3714

    Abstract: 2SC3691 2SC3702 2SC3676 2SC3692 2SC3671 2SC3672 2SC3673 G1508 2SC3678
    Text: - 168 - S Ta=25cC, *EPfäTc=25°C} a s m. % 2SC3671 2SC3672 2SC3673 2SC3675 2SC3676 2SC3678 2SC3679 2SC3680 2SC3685 2SC3686 2SC3687 2SC3688 2SC3689 2SC3691 2SC3692 2SC3693 2SC3694 2SC370Q 2SC3701 2SC3702 2SC3704 2SC3705 2SC3707 2SC3708 2SC3709 2SC3710 2SC3714


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    PDF 2SC3671 2SC3672 2SC3673 2SC3675 2SC3676 2SC3678 2SC3679 2S00MHz SC-59A) 2SC3707 2sc3714 2SC3691 2SC3702 2SC3676 2SC3692 2SC3671 2SC3672 G1508

    2SD915

    Abstract: 2SD877 2SD889 2SD870 2SD878 2SD873 2SD866 2SD866A 2SD867 2SD868
    Text: - 228 - m n Ta=25cC, *EP(ÏTc=25‘ C 32 2SD866 & ír £ föT ffl & PSW VcBO VcEO ICCDC) Pc Pc* (V) (V) (A) (W) (W) 130 80 7 i.CBO. (max) (/¿A) 40 . HF VcB (V) 10 100 (min) 60 M (max) 260 te Vc e (V) (Ta=25*C) (max) (V) Ic / I e (A) 2 [*EPfätyp<S] (V)


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    PDF 2SD866 2SD866A 2SD867 2SD868 2SD869 2SD870 2SD871 2SD886A T0-220F 2SD888 2SD915 2SD877 2SD889 2SD870 2SD878 2SD873 2SD867

    2SB897

    Abstract: 2SD115 2SB863 2SB889 2sb891 2sd1148 2SD1207 2SB855 2SB859 2SB860
    Text: - 64 - m % Ta=25cC . * E P ( ä T c = 2 5 eC m & 2SB859 2SB860 2SB861 ÍL BÍL BÍL H & VcBO Vc e o ICCDC) Pc Pc* (V) (V) (A) (W) (W) LF PA -100 -80 -A LF PA/TV Vont -100 -100 -4 1.8 1.8 Ic b o (max) ink) 40 -100 V’ CB (V) -80 40 , hp (min) (max) te te


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    PDF 2SB859 2SB860 2SB861 2SB862 2SB863 2SB855 2SB867 -1320ABJÃ 2SB886 2SB887 2SB897 2SD115 2SB863 2SB889 2sb891 2sd1148 2SD1207 2SB855

    2N3904

    Abstract: tr 2n3904 2n3904f 2N3904V
    Text: 2N3903 2N3904* MAXIMUM RATINGS Symbol Value Unit Coliector-Em itter Voltage VCEO 40 Vdc Coliector-Base Voltge VCBO 60 Vdc Em itter-Base Voltage v EBO 6.0 Vdc Rating C o llector C u rre n t— Co ntinuo us ic 200 m Adc Total D evice D issipatio n Cerate ab ove 25CC


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    PDF 2N3903 2N3904* O-226AA) 2N3903, 2N3904 2N3904 tr 2n3904 2n3904f 2N3904V

    J202

    Abstract: J203
    Text: MAXIMUM RATINGS Rating Symbol Value Drain-Source Voltage Vd s 40 U nit Vdc Drain-Gate Voltage Vd G 40 Vdc Gate-Source Voltage Vdc Vg s 40 Gate Current Ig 50 mA Total Device Dissipation g T ^ = 25CC Derate above 25°C PD 310 2.82 mW m W /X Tstq - 65 to + 150


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    PDF 2N5457 J202 J203

    MOTOROLA S

    Abstract: No abstract text available
    Text: Symbol Value Unit Collector-Emitter Voltage Rating v CEO 45 Vdc Collector-Base Voltage VCBO 45 Vdc Emitter-Base Voltage v EBO 6.5 Vdc Collector Current — Continuous 'c 200 mAdc Total Device Dissipation GL Derate above 25CC = 25CC Pd 625 5.0 mW mW/X Total Device Dissipation a T c = 25°C


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    PDF MPSA18 MOTOROLA S

    Untitled

    Abstract: No abstract text available
    Text: MAXIMUM RATINGS S ym bol V a lue U n it Drain-G ate V o ltage VDG - 35 Vdc G ate-Source V o ltage vgs -3 5 Vdc Gate C urrent 'G 50 mA T otal Device D issipation w T/^ = 25CC D erate above 25°C Pd 350 2.8 mW m W /T Tl 300 nC T j- T Stg - 65 to + 15 0 °C


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: M A X IM U M RA TIN G S Sym bol Value Unit Collector-Emitter Voltage Rating v C EO 30 Vdc Collector-Base Voltage v CBO 40 Vdc Emitter-Base Voltage Ve b O 4.0 Vdc Collector Current — C ontin uo us 'C 100 m A dc Total Device Dissip ation a T ^ = 25cC Derate above 253C


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    PDF OFF00 MPSH20

    32N50

    Abstract: No abstract text available
    Text: HiPerFAST IGBT with Diode IXGH 32N50BU1 IXGH 32N50BU1S v CES ^C25 v CE sat «1, Symbol Test Conditions Maximum Ratings V ces Tj = 25CC to 150CC 500 v CGR T j = 25°C to 150“ C; RGE = 1 M£2 500 V v GES Continuous ±20 V v¥gem Transient ±30 V ^C25 T0 = 25°C


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    PDF 32N50BU1 32N50BU1S O-247 32N50BU1S) 32N90BU1 32NS0BU1S B2-22 32N50

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification 3.3V Quad 2-input OR gate 74LVT32 QUICK REFERENCE DATA SYMBOL LOGIC SYMBOL CONDITIONS "lamb = 25cC; GND = 0V PARAMETER TYPICAL UNIT 2.6 3.2 ns tp L H *PHL Propagation delay An, Bn to Yn CL = 50pF; VCC = 3-3V C|N


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    PDF 74LVT32 SA00354 74LVT 10MHz 500ns

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification 3.3V Triple 3-input NAND gate 74LVT10 QUICK REFERENCE DATA SYMBOL LOGIC SYMBOL IEEE/IEC CONDITIONS Tamb = 25CC; GND = 0V PARAMETER TYPICAL UNIT 3.8 3.3 ns Propagation delay An, Bn, Cn to Yn CL = 50pF; Vo c = 3.3V


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    PDF 74LVT10 SA00346 74LVT 10MHz 500ns SV00022

    2SK2683

    Abstract: 2sk2680
    Text: • AP Series Lineup New H-IIF Series FRD built-in VDSS = 250V, P-channel Absolute rwudraum rating« a»Ta = 25CC Type No. 2SJ4S3 Package V058 (V) voas (V) TP 2SJ454 2SJ455 250 V«S(Cffl >0 (A) nrintomax w 2SJ456 (V) Bos (on) typ m ax st l¥f»l Clss <s>


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    PDF 2SJ454 2SJ455 2SJ456 2SK2530 2SK2531 2SK2532 2SK2533 2SK2534 2SK2592 2SK2680 2SK2683

    2SD1812

    Abstract: 2SD1818 2SD1832 GV 269 2SD1816 2SD1817 2SD1819A 2SD1820 2SD1820A 2SD1821
    Text: - 268 - mXËfè a g m îa=25°C, *EPfàTc=25'C • v-Bu Vc e o (V) (V) . m Ivvi/w Pc Pc* ICBO (A) (W) (W) (UA) O —A PA 160 160 1.5 0.9 2SD1S15 = m pstr 120 100 3 1 20 PSW 120 100 4 1 H # PD 80 60 3 1 10 2SD1817 W 1!È (V) (Ta=25cC) (V) [*EP(átyp{¡f]


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    PDF 2SD1812 2SD1816 2SD1817 2SD1818 2SD1819A 2SD1820 2SD1820A SC-62 2SD1834 2SB1229 2SD1832 GV 269 2SD1816 2SD1819A 2SD1821

    FRQS10A065

    Abstract: No abstract text available
    Text: 10A 65VTjw150V T —h ' ^ y S B D Anode common FRQ S10A065 Fully Molded similar to ttfl* TO-22QAB Nihon Inter Electronics Corporation Specification. K it Construction fflìÉ Application '> 3 y Schottky Barrier Diode High Frequency Rectification MAXIMUM RATINGS Ta=25cC: Unless otherwise specified


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    PDF O-22OAB FRQS10A065 20mVRMs, 100kHz FRQS10A065 UL94V-0ISÂ UL94V-0

    2SD1383K

    Abstract: 2SD1402 2SD1407 2SD1416 2SD1390 2SD1376K 2SD1377K 2SD1378 2SD1379 2SD1380
    Text: - 246 - Ta=25cC, *Ep(äTc=25‘C TJ 2SD1376K 2SD1377K 2SD1378 2SD13792SD13S0 Cf — 2SD1381 2SD1382 2SD1383K 2SD1384 2SD1385 2SD139Q 2SD1391 2SD1392 2SD1394 2SD1395 2SD1396 2SD1397 2SD1398 2SD1399 □— A BÄ D— A n— A □— A O— A D — töT


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    PDF 2SD1376K 2SD1377K 2SD1378 2SD1379 2SD1380 2SD1381 2SD1382 2SD1383T0-3PB) 2SD1403 2-10L1A) 2SD1383K 2SD1402 2SD1407 2SD1416 2SD1390

    FCHS30A12

    Abstract: marking WMM
    Text: 30A 120V T jw 150V Fully Molded similar to TO-22QAB F C H S 3 0 A 12 0 * ^ ft«* Nihon Inter Electronics Corporation Specification is3 y Construction fflÎÊ Application ^ K Schottky Barrier Diode High Frequency Rectification MAXIMUM RATINGS Ta=25cC Unless otherwise specified


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    PDF 30A120VTjw150V O-22QAB FCHS30A12 100kHz FCHS30A12 marking WMM

    2sc3055

    Abstract: T03B 2SC3008-KA 2SC3030 2SC3008-MA 2SC2999 2SC3000 2SC3001 2SC3004 2SC3006
    Text: - 142 - ili íS±¿ Ta=25cC, *EpíÍTc=25t¡ A7 -a f-L -a m iâ VCBO VcEO (V) (V) Ic(DC) (A) Pc* (W) (W) HF A 25 20 0.03 0.15 2SC3000 HF A 30 20 0.03 0.25 2SC3001 HF PA 20 2SC2999 2SC3004 BÍL 2SC3006 2SC3007 2SC3008-KA an 2SC30Û8-MA sm 2SC3011 2SC3012


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    PDF 2SC2999 2SC3000 2SC3001 2SC3004 2SC3006 400MHz 2SC3007 2SC3008â 2SC3008-M 2SC3011 2sc3055 T03B 2SC3008-KA 2SC3030 2SC3008-MA

    MTP8P20

    Abstract: MTP10N10M MTP8N18 MTP7N18 MTP7N20 MTP7P05 MTP7P06 MTP8N08 MTP8N10 MTP8N12
    Text: M € f Ä * Vds or Vd g tí: « A V * £ fê (Ta=25^C) Vg s (V) Id Po * /CH * /CH Ig s s m (A) % S V g s (th) Id s s (nA) Vg s (V) Vd s (V) <UA) Id (nA) (V) (V) fê ÎDs(on) V:r>s= Vg s max min ft '14 CTa=25cC ) ÌD(on) Ciss g fs Coss ft Crss V g s =0 (max)


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    PDF MTP7N18 T0-220AB MTP7N20 O-220AB MTP7P05 MTP7P06 MTP10NI5 MTP8P20 MTP10N10M MTP8N18 MTP8N08 MTP8N10 MTP8N12