2SC30 Search Results

Contextual Info: 2SC3072 SILICON NPN EPITAXIAL T Y P E STROBO FLASH APPLICATIONS. Unit in iran MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES: . High DC Current Gain: hFE=140-~450 VCE=2V, IC=0.5A hFE=70(Min.) (VcE=2V, Ic =4A) . Low Collector Saturation Voltage : VCE(sat)=1.0V(Max.) (Ic=4A, Ib =0.1A)

Contextual Info: 2SC301 1 SIUCQN NPN EPITAXIAL PLANAR t y p e t r a n s i s t o r U H F-C BAND LOW NOISE AMPLIFIER APPLICATIONS. • • • High Gain Low Noise Figure High f r U nit in mm : |S 2 ie|2= 12dB Typ. : NF = 2.3dB (Typ.), f= lG H z : f'i’ = 6.5GIIz M AXIM UM RATINGS (Ta = 25°C)

2SC3055

Contextual Info: Inchange Semiconductor Product Specification 2SC3055 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·High breakdown voltage ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base

C3076

Abstract: 2SC3076
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial 2SC3076 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Low Collectror Saturation Voltage:VCE sat =0.5V(Max.)(IC=1A) +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0 +0.15

2SA1232

Abstract: 2SC3012
Contextual Info: JMnic Product Specification 2SA1232 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PFa package ・Complement to type 2SC3012 APPLICATIONS ・Audio frequency power amplifier. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3099 Unit in mm V H F - U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure. N F= 1.7dB, |S 2 ie l2 = 15dB f= 500MHz NF = 2.5dB, |S2 ie l2 = 9.5dB(f=lGHz) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3098 U nit in mm V H F— UHF B A N D LO W NOISE AM PLIFIER APPLICATIONS. + 0.5 2.5 - 0 . 3 + 0 .2 5 1 .5 - 0 .1 5 • Low Noise Figure. dd . NF = 2.5dB, |S2iel2= 14.5dB f= 500MHz +I Et . NF = 3.0dB, |S2 ie l2 = 9.0dB(f=lGHz)

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

Contextual Info: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •

Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)

J600 transistor

Abstract: transistor J600 2SC3070 VEBO-15V
Contextual Info: Ordering number: EN 923G _ 2SC3070 No.923G NPN Epitaxial Planar Silicon Transistor High hpE> Low-Frequency General-Purpose Amp Applications Applications • Low-frequency, general-purpose amp., various drivers, muting circuit Features • High DC current gain hpE=800 to 3200}

T1P122

Abstract: T1P41C MJE30SST t1p41 T1P31 T1P41A BD211 2SD880Y 2SD88D 2N529B
Contextual Info: POWER PACKAGE TRANSISTORS NPN M a x im u m R a t in g s Type No. 2SC3039 MJE13005 T1PS0 vEB0 PD •CBO • vC8 (V) (V) (V) (W) (V) Min Min Min e Tc=25°C 500 400 700 400 500 400 7 50 9 Max 10 hFE 400 40 e 'c (A) Min 75 5 450 350 5 300 300 3 21 T1P48 400

2SD1539

Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
Contextual Info: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5

2SC3047

Contextual Info: Inchange Semiconductor Product Specification 2SC3047 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters

npn 10a 800v

Abstract: 2SC3090
Contextual Info: Inchange Semiconductor Product Specification 2SC3090 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High breakdown voltage VCBO≥800V ・Fast switching speed ・Wide ASO（Safe Operating Area） APPLICATIONS ・500V/10A Switching Regulator Applications

toshiba c3075

Abstract: 2SC3075 C3075
Contextual Info: 2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3075 Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Converter Applications • Excellent switching times: tr = 1.0 s (max) • High collector breakdown voltage: VCEO = 400 V

c3074

Abstract: 2SC3074 C3074 y 2SA1244
Contextual Info: 2SC3074 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3074 ○ 大電力スイッチング用 • 単位: mm コレクタ飽和電圧が低い。: VCE (sat) = 0.4 V (最大) (IC = 3 A) • スイッチング時間が速い。: tstg = 1.0 s (標準)

J135

Abstract: 2SC3020
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3020 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION 2 S C 3 0 2 0 is a silicon NPN epitaxial planar typ e transisto r design OUTLINE DRAWING D im e n s io n s in m m ed fo r UHF po w e r am plifier applications. FEATURES •

1013C

Abstract: 2SC3090 5.1b2 EN1013C ir1014
Contextual Info: Ordering number :EN1013C I 2SC3090 NO.X013C NPN Triple Diffused Planar Silicon Transistor For Switching Regulators Features . High breakdown voltage VCgQ^800V . . Fast switching speed. . Wide ASO. Absolute Maximum Ratings at Ta=25 C Collector-to-Base Voltage

2SC3043

Contextual Info: SavantIC Semiconductor Product Specification 2SC3043 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Fast switching speed ·Wide area of safe operation ·High breakdown voltage APPLICATIONS ·For switching regulator applications PINNING see Fig.2

2SC3039

Contextual Info: SavantIC Semiconductor Product Specification 2SC3039 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High breakdown voltage VCBO 500V . ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·400V/7A switching regulator applications

2sc3090

Abstract: npn 10a 800v 10A Switching Regulator
Contextual Info: SavantIC Semiconductor Product Specification 2SC3090 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High breakdown voltage VCBO 800V ·Fast switching speed ·Wide ASO Safe Operating Area APPLICATIONS ·500V/10A Switching Regulator Applications

2SC3025

Contextual Info: SavantIC Semiconductor Product Specification 2SC3025 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage APPLICATIONS ·High voltage power switching character display horizontal deflection output PINNING see Fig.2 PIN DESCRIPTION

2SC3088

Contextual Info: SavantIC Semiconductor Product Specification 2SC3088 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High breakdown voltage VCBO 800V ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·500V/4A Switching Regulator Applications