BT153
Abstract: TAG thyristor Thyristor TAG thyristor TAG 13 BT153 fast turn off philips thyristor 239 thyristor TRIGGER PULSE TRANSFORMER 7Z82062
Text: PHILIPS INTERNATIONAL SflE J> 7110fl2t, 0053035 301 • PHIN B l iby _y F A S T TURN-OFF TH YR IS TO R Glass-passivated fast-turn-off thyristor in a T 0 -2 2 0 A B envelope, intended fo r use in inverter, pulse and switching applications. Its characteristics make the device extremely suitable for use in regulator,
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7110fl2t,
T0-220AB
T0-220AB.
BT153
TAG thyristor
Thyristor TAG
thyristor TAG 13
BT153 fast turn off
philips thyristor 239
thyristor TRIGGER PULSE TRANSFORMER
7Z82062
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BUK426-100B
Abstract: transistor BU 110 BUK426-100A
Text: Philips Components Data sheet status Product specification date of issue March 1991 PHILIPS 7 - 3 ^ -/ / B U K 4 2 6 - 1OOA/B PowerMOS transistor 5bE T> INTERNATIONAL 7110fl2t 0044120 flSD I_ I GENERAL DESCRIPTION N-channel enhancement mode
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BUK426-1OOA/B
7110fl2t
D0441EG
OT199
-100A
-100B
BUK426-100B
transistor BU 110
BUK426-100A
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RZ2731B60W
Abstract: tRANSISTOR 2.7 3.1 3.5 GHZ cw
Text: • 3 3 - 1 3 RZ2731B60W PHILIPS INTERNATIONAL SbE D 7110fl2ti 004Li57ö OflS M P H I N PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power am plifier w ith a frequency range o f 2.7 to 3.1 GHz.
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RZ2731B60W
711002b
004b5Ã
RZ2731B60W
tRANSISTOR 2.7 3.1 3.5 GHZ cw
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SOT227B package
Abstract: mb 428 mb 428 ic data ESM4045A ESM4045D SOT227A 4045D
Text: PHILIPS INTERNATIONAL 45E ]> 7110fl2ti 0031233 T M P HIN ESM4045A V ESM4045D(V) T '- 3 3 - d Q SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives, converters, switch mode power supplies (SMPS) and uninterruptable power supplies (UPS).
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711082b
ESM4045A
lESM4045D
4045D
ICsat/50
Bon11
Csat/50;
711002b
SOT227B package
mb 428
mb 428 ic data
ESM4045D
SOT227A
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D 1991 AR
Abstract: BD945
Text: BD943 BD945 BD947 _ HILIPS INTERNATIONAL SbE ]> H 7110fl2ti 0043070 SOfl PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.
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BD943
BD945
BD947
7110fl2ti
BD944;
O-220.
BD947
D 1991 AR
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Untitled
Abstract: No abstract text available
Text: BD202F; BD204F BDX78F PHILIPS in t e r n a t io n a l SbE ]> • 7110fl2t 0042fl5b flbO M P H I N T-33-17 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors in SOT186 envelopes with an electrically insulated mounting base. NPN complements are BD201F, BD203F and BDX77F respectively.
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BD202F;
BD204F
BDX78F
7110fl2t
0042fl5b
T-33-17
OT186
BD201F,
BD203F
BDX77F
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Diode SV-02
Abstract: 424 8P 850 nm LED for fiber-optic sensor 850 nm photodiode for fiber-optic sensor 850nm photodiode Fiber-optic fiber-optic photodiode for 850nm photodiode for fiber-optic sensor 850 nm TRANSIMpedance Amplifier NE5211D SA5211
Text: INTEGRATED CIRCUITS NE/SA5211 Transimpedance amplifier 180MHz Product specification 1995 Apr 26 IC19 Philips Semiconductors PHILIPS 7110fl2tj ODfl^T^a DDT • ! Philips Semiconductors Product specification Transimpedance amplifier (180MHz) NE/SA5211 DESCRIPTION
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NE/SA5211
180MHz)
7110fl2tj
NE/SA5211
28ki2
180MHz
sot108-1
076e06s
Diode SV-02
424 8P
850 nm LED for fiber-optic sensor
850 nm photodiode for fiber-optic sensor
850nm photodiode Fiber-optic
fiber-optic photodiode for 850nm
photodiode for fiber-optic sensor 850 nm
TRANSIMpedance Amplifier
NE5211D
SA5211
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BUK102-50GS
Abstract: T0220AB
Text: PHILIPS INTERNATIONAL bSE » • 7110fl2ti 0GL.3Ö34 b5D BIPHIN Philips Semiconductors Product Specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET In a 3 pin plastic envelope, intended as a general purpose switch for
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BUK102-50GS
BUK102-50BS
BUK102-50GS
T0220AB
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BDS201
Abstract: BDS77 BDS203 MSB002
Text: PHILIPS INTERNA TI ON AL SbE Philips Components status Product specification April 1991 B 7110fl2ti Q 0 4 3 1 3 4 45fl • P H I N T-33 -o s BDS201/203/77 Data sheet date o f issue D NPN Silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223
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7110fl2t
D043134
BDS201/203/77
T-33-os-
OT223)
BDS202/204/78.
BDS201
BDS203
BDS77
MSB002
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lem HA
Abstract: BUK102-50GL IEC134 T0220AB
Text: PHILIPS INTERNATIONAL bSE D • 7110fl2ti DDbBflPS PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.
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7110A2b
BUK102-50GL
lem HA
IEC134
T0220AB
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BUK426-100A
Abstract: BUK426-100B k426
Text: Philips Components Data sheet status Product specification date of issue March 1991 7 - 3 ^ - / / B U K 4 2 6 - 1OOA/B PowerMOS transistor 5bE T> PHILIPS INTERNATIONAL 7110fl2t 0044120 flSD I_ I GENERAL DESCRIPTION N-channel enhancement mode
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BUK426-1OOA/B
7110fl2t
D0441EG
OT199
-100A
-100B
K426-10OA/B
711002b
C1044124
BUK426-100A
BUK426-100B
k426
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b0724
Abstract: B0719 BD722 transistor bu 311 B0720 BD724 BD440 BD719 BD720 BD726
Text: BD720 BD722 BD724 BD726 PHILIPS INTERNATIONAL SLE D • 7110fl2ti 0043004 Ô3T M P H I N T - 3 J - 11 SILICON EPITAXIAL-BASE POWER TRANSISTOR PNP transistor in a SOT32 plastic envelope intended for use in audio output and general purpose amplifier applications. BD720 is equivalent to BD440. NPN complements are BD719; 721; 723 and
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BD720
BD722
BD724
BD726
711002b
BD440.
BD719;
BD724.
b0724
B0719
transistor bu 311
B0720
BD440
BD719
BD726
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LTN242
Abstract: LXL242-G
Text: PHILIPS INTERNATIONAL • bGE 7110fl2t> 00S71bfl 3TÔ ■ LXL242-G Data sheet status Product specification date of issue July 1990 ' Electro-luminescent backlight panel QUICK REFERENCE DATA DEVICE DESCRIPTION Lit area dimensions The LXL242-G is an electro-luminescent backlight panel
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7110fl2t>
0QS71bfl
LXL242-G
LTN242
7110flab
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BFT92
Abstract: BFQ52 crystal PHILIPS BFQ51 X3A-BFT92
Text: Produ ct specification P h ilip s S em icon du ctors " F 3 K ÌO PNP 5 GHz wideband transistor crystal PHILIPS INTERNATIONAL SbE » X3A-BFT92 7110fl2ti DQifblOA D3Û H P H I N M E C H A N IC A L DATA DESCRIPTIO N Crystal P N P crystal used in BFQ51 SOT37 , BFQ52 (TO-72)
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BFQ51
BFQ52
BFT92
X3A-BFT92
X3A-BFT92
711002b
RV-3-5-52/733
BFT92
BFQ52
crystal PHILIPS
BFQ51
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7 pin dil smps power control ic
Abstract: 2w LED smps LED monitor circuit diagram SMPS battery tea1100 KTC transformer LED Drive smps circuit diagram monitor smps circuit diagram APPLICATION NOTES OF SMPS CHARGERS TEA1100 7 pin SMPS
Text: Philips Sem iconductors Integrated Circuits Prelim inary specification Battery monitor for NiCd and NiMH chargers _ TEA1100; FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK 1C11 OR DATA SHEET FEATURES • Large battery voltage range
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TEA1100;
TEA1100T
PLVA450A)
7110fl2b
7 pin dil smps power control ic
2w LED smps
LED monitor circuit diagram
SMPS battery tea1100
KTC transformer
LED Drive smps circuit diagram
monitor smps circuit diagram
APPLICATION NOTES OF SMPS CHARGERS
TEA1100
7 pin SMPS
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4046 application note 9398
Abstract: 4046 application note pll 4046 application note 9398 649 90011 4046 as FM demodulator 4046 PLL Designers Guide PLL WITH VCO 4046 4046 application note pll philips 4046 vco Zero-Crossing Trigger-Phase Control Circuit Dim 4046 application note philips
Text: PHILIPS INTERNATIONAL M E , „ ?11Qé2t ^ -p | P h ilip s S e m ic o n d u c to rs P re lim in a ry S p e c ific a tio n PLL with bandgap controlled VCO 74HCT9046A FEATURES • Frequency discrimination
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74HCT9046A
4046 application note 9398
4046 application note pll
4046 application note 9398 649 90011
4046 as FM demodulator
4046 PLL Designers Guide
PLL WITH VCO 4046
4046 application note pll philips
4046 vco
Zero-Crossing Trigger-Phase Control Circuit Dim
4046 application note philips
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a 933 transistor
Abstract: BFR90A 2912 TRANSISTOR PNP bfr90A philips BFQ51 3FR90 mcd001
Text: Philips Semiconductors Product specification 7 = 3 A -/7 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES SbE D ^ BFR90A 7110fi5Li □D4St.cì2 44Ì M P H I N PINNING • Low noise • Low intermodulation distortion PIN • High power gain 1 •
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BFR90A
711062Li
ON4184)
BFQ51.
a 933 transistor
BFR90A
2912 TRANSISTOR PNP
bfr90A philips
BFQ51
3FR90
mcd001
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PDF
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tda 3310
Abstract: SAA2003 SAA2013 SAA2013H
Text: P r e lim in a r y s p e c if ic a tio n P h ilip s S e m ic o n d u c to r s Adaptive allocation and scaling for PASC coding in DCC systems_ SAA2013 FEATURES • Wide operating voltage range: 2.7 to 5.5 V • Low power consumption: 13 mW; 3.0 V
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SAA2013
OT307)
SAA2013
TC256
FS256.
CLK24.
711002b
tda 3310
SAA2003
SAA2013H
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LIMING VOLTAGE RELAY
Abstract: LIMING relay NE5090 NE5090D NE5090N SA5090D SA5090N stepper motor philips Philips stepper motor 28V relay latch
Text: P hilips Sem iconductors Linear Products_ P roduct specification Addressable relay driver NE/SA5090 DESCRIPTION PIN CONFIGURATION The NE/SA5090 addressable relay driver is a high-current latched driver, similar in function to the 9934 address decoder. The device
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NE/SA5090
NE5090/SA5090
150mA
16-pin
711005b
7110fl2b
D07flfl57
LIMING VOLTAGE RELAY
LIMING relay
NE5090
NE5090D
NE5090N
SA5090D
SA5090N
stepper motor philips
Philips stepper motor
28V relay latch
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PDF
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IC LA 7840 PIN DETAIL
Abstract: ic la 7840 generator belt MAB8048 PCD3344A PCD3344AP PCD3349A PCD3352A PCD3353A PCD33XXA
Text: Philips Semiconductors Product specification 8-bit microcontroller with DTMF generator CONTENTS 1 FEATURES 2 GENERAL DESCRIPTION 3 ORDERING INFORMATION 4 BLOCK DIAGRAM 5 PINNING INFORMATION 5.1 5.2 Pinning Pin description 6 FREQUENCY GENERATOR 6.1 6.2 6.3
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PCD3344A;
PCD3349A
711002b
0CHb375
IC LA 7840 PIN DETAIL
ic la 7840
generator belt
MAB8048
PCD3344A
PCD3344AP
PCD3349A
PCD3352A
PCD3353A
PCD33XXA
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"Pager receiver"
Abstract: LQFP32 PCD5003 PCF5001 UAA2082 UAA2082H UAA2082U sine wave generator using ic 555 philips audio power amplifier ic 3456
Text: Philips Semiconductors Product specification Advanced pager receiver UAA2082 FEATURES GENERAL DESCRIPTION • Wide frequency range: VHF, UHF and 900 MHz bands The UAA2082 is a high-performance low-power radio receiver circuit primarily intended for VHF, UHF and
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UAA2082
PCA5000A,
PCF5001
PCD5003
llG62b
"Pager receiver"
LQFP32
UAA2082
UAA2082H
UAA2082U
sine wave generator using ic 555
philips audio power amplifier ic 3456
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TDA8351
Abstract: TDA8366 TDA8376 TDA9150 TDA9151B TDA9160A TDA9162 tda8351 s1
Text: IN TEG R A TED C IR C U ITS TDA8351 DC-coupled vertical deflection circuit P relim inary specification S upersedes data of June 1992 File under Integrated Circuits, IC02 January 1995 Philips Semiconductors PHILIPS PHILIPS TllGflZb Q0ÖL4DÖ 4Ô3 This Material Copyrighted By Its Respective Manufacturer
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TDA8351
533061/1500/02/pp16
711Qfl2tj
TDA8351
TDA8366
TDA8376
TDA9150
TDA9151B
TDA9160A
TDA9162
tda8351 s1
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PDF
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TCXO KSS
Abstract: UAA2072M UMA1017M flM337
Text: Preliminary specification Philips Semiconductors Low-voltage frequency synthesizer for radio telephones UMA1017M operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3 V supply The synthesizer operates at VCO input frequencies up to
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UMA1017M
UMA1017M
7110flab
TCXO KSS
UAA2072M
flM337
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PDF
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BF545C
Abstract: 24 SOT23 BF545A BF545B
Text: Philips Semiconductors Productspecification N-channel silicon junction field-effect transistors BF545A; BF545B; BF545C FEATURES • Low leakage level typ. 500 fA • High gain • Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS • Impedance converters in e.g. electret microphones and
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BF545A'
BF545B:
BF545C
BF545A)
bf545a:
bf545c:
volta103
BF545A;
BF545B;
BF545C
24 SOT23
BF545A
BF545B
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