MCD288
Abstract: The Diode with Package Outlines 1993 SOT96A 1545A pulse to sinewave convertor DDSS431 TDA1545A TDA1545AT
Text: PHILIPS INTERNATIONAL bOE D • 7110fl2b D O S S ^ S 51b « P H I N 'T ' Philips Preliminary specification Stereo continuous calibration DAC TDA1545A FEATURES GENERAL DESCRIPTION • Space saving package S08 or DIL8
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711Dfl2b
16-bit
MCD288
The Diode with Package Outlines 1993
SOT96A
1545A
pulse to sinewave convertor
DDSS431
TDA1545A
TDA1545AT
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BUK10B-50US
Abstract: philips ldh d6506 BUK106-50L BUK106-50S buk106
Text: bSE » PHILIPS INTERNATIONAL • 7110fl2b D0b3flbS 2TM BiPHIN Product Specification Philips Semiconductors PowerMOS transìstor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic
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7110fl2b
BUK106-50L7S
BUK106-50LP/SP
BUK106-50L/S
BUK106-50I7S
BUK10B-50US
philips ldh
d6506
BUK106-50L
BUK106-50S
buk106
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7FLU
Abstract: pin configuration of i3 processor FM SOUND PROCESSOR TDA3857 IEC134 TDA3856 TDA3858 SAW-Filter
Text: INTEGRATED CIRCUITS S K l i i T TDA3857 Quasi-split sound processor with two FM demodulators Product specification Supersedes data of October 1990 File under Integrated Circuits, IC02 June 1994 Philips Semiconductors PHILIPS PHILIPS V j? 7110fl2b D07fl00S T27 •
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TDA3857
7110fl2b
D07fl00S
TDA3856
TDA3858
7FLU
pin configuration of i3 processor
FM SOUND PROCESSOR
TDA3857
IEC134
TDA3856
TDA3858
SAW-Filter
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BUK452-100B
Abstract: BUK452-100A T0220AB
Text: PHILIPS INTERNATIONAL bSE D • 7110fl2b DDbHOBl SSI « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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7110fl2b
BUK452-100A/B
T0220AB
BUK452-100B
BUK452-100A
T0220AB
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MX0912B250Y
Abstract: 33-AS IEC134 015 capacitor philips
Text: Data shaat •tatua data of Issu* HILXPS MX0912B250Y Preliminary specification NPN silicon planar epitaxial microwave power transistor June 1992 SbE D INTERNATIONAL • 7110fl2b Ü04b34fc, 7Q3 H P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high
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33-AS"
MX0912B250Y
G04b34b
T-33-Ã
711Dfl2b
004b352
0QMb43?
MX0912B250Y
33-AS
IEC134
015 capacitor philips
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TRANSISTOR BO 344
Abstract: TRANSISTOR BO 341 tny 175 BUK455 BUK455-100A BUK455-100B T0220AB data transistor 1650
Text: PHILIPS INTERNATIONAL bSE D • 7110fl2b ODbMOfll 067 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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7110flSb
BUK455-100A/B
T0220AB
BUK455
-100A
-100B
TRANSISTOR BO 344
TRANSISTOR BO 341
tny 175
BUK455-100A
BUK455-100B
data transistor 1650
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OM976
Abstract: 0071547 philips hybrid OM976
Text: 7110fl2b 0 0 7 1 S 4 3 Philips Semiconductors TDM M P H I N Preliminary specification Video output amplifier FEATURES OM976/1 PINNING • DC coupled video amplifier for cathode drive, with a positive-going video input. 1 input • Low internal thermal resistance
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7110a2fc.
OM976/1
OM976/1
OM976
0071547
philips hybrid OM976
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LTD101R-11
Abstract: dgs70 G-324
Text: PHILIPS INTERNATIONAL . bDE D • 7110fl2b 0057018 « m mPHIN Philips C o m p o n en ts Data sheet status Product specification date of issue July 1990 LTD101 Liquid crystal display DEVICE DESCRIPTION The LTD101 is a 3 1/2-digit 7 segment clock display with
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711002b
0DS701Ã
LTD101
LTD101
LTD101R-11
LTD101R-11
dgs70
G-324
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quartz watch chip
Abstract: watch stepping motor KUA159X PCA158X
Text: PHILIPS INTERNATIONAL b4E D • 7110fl2b DG5 7 23 1 1T7 P h ilip s S em P rod uct specification 32 kHz watch circuit with frequency adjustment A . _ v PCA159X serles FEATURES GENERAL DESCRIPTION
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711002b
PCA159X
7110fl2b
quartz watch chip
watch stepping motor
KUA159X
PCA158X
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BC331
Abstract: BC331 transistor transistor BC331 BC337 bc337-40 npn transistor BC337A BC337-26 TRANSISTOR BC338 BC327 BC327A
Text: BC337 BC337A BC338 1 PHILIPS INTERNATIONAL SbE D • 7110fl2b OOMllflfl DTX H I P H I N - SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for use in driver and output stages of audio amplifiers. The BC337, BC337A, BC338 are complementary to the BC327, BC327A and BC328 respectively.
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BC337
BC337A
BC338
BC337,
BC337A,
BC338
BC327,
BC327A
BC328
BC337
BC331
BC331 transistor
transistor BC331
bc337-40 npn transistor
BC337A
BC337-26
TRANSISTOR BC338
BC327
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diode t62
Abstract: No abstract text available
Text: BDT62;-62A BDT62B; 62C J PHILIPS INTERNATIONAL SbE ]> • 7110fl2b 0043S3Ö TÔ4 M P H I N T - 3 3 - 3 / SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m onolithic Darlington circuit for audio output stages and general am plifier and switching applications. T 0 -2 2 0 plastic envelope. N-P-N complements are B D T63,
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BDT62
BDT62B;
7110fl2b
0043S3Ö
BDT63C
BDT62;
7110flat
diode t62
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Untitled
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL SflE D • 7110fl2b GGS30Sfl TOT « P H I N _ BTR59 S E R IE S FAST GATE TURN-OFF THYRISTORS T h y risto rs in S O T -9 3 envelopes w hich are capable of being turned both on and o ff via the gate, and
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7110fl2b
GGS30Sfl
BTR59
--800R
711002b
M3226
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946f
Abstract: No abstract text available
Text: BD944F;946F BD948F PHILIPS INTERNATIONAL SbE » • 7110fl2b 00430^5 17T ■ P H I N r - 7 ? - ' / cr SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD943F, BD945Fand BD947F.
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BD944F
BD948F
7110fl2b
OT186
BD943F,
BD945Fand
BD947F.
BD946F
BD948F
946f
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BGY888
Abstract: DIN45004B SC16
Text: D IS C R E T E S E M IC O N D U C T O R S BGY888 CATV amplifier module Preliminary specification File under Discrete Semiconductors, SC16 December 1994 i• Philips Semiconductors PHILIPS P H ILIP S 7110fl2b 0007034 I 83^ This Material Copyrighted By Its Respective Manufacturer
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BGY888
7110fl2b
OT115J2
14UIU
amplif588
711002b
OT115J2.
711D02fc>
BGY888
DIN45004B
SC16
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PTB42003X
Abstract: No abstract text available
Text: l'P-33'Ol PTB42003X \_ PHILIPS INTERNATIONAL St.E D • 7110fl2b DD4b44fl Mb? ■ P H I N MICROWAVE POWER TRANSISTOR NPN silicon power transistor fo r use in a common-base, class-C am plifier up to a frequency o f 4.2 GHz in CW conditions in m ilita ry and professional applications.
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V33-07
PTB42003X
7110fl2b
DD4b44Ã
easTB42003X
T-33-07
711002b
DGMb451
PTB42003X
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BUK551-60A
Abstract: BUK551-60B T0220AB fet transistor ft
Text: Philips Com ponents D ata sheet status Preliminary specification d ate of issue March 1991 5bE PINNING - T0220AB PIN m 7110fl2b GO MM b ö M 465 • PHIN SYMBOL PARAMETER MAX. MAX. V ds Id P« T. BUK551 Drain-source voltage Drain current DC Total power dissipation
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BUK551-60A/B
7110fl2b
T0220AB
BUK551
T-39-11
711QflSb
BUK551-60A
BUK551-60B
fet transistor ft
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compandor
Abstract: CD8373D CD8373DK S020 SA5752 SA5753 TDA7050 TDA7050T UMA1000T audio compressor expander IC 8 pin
Text: INTEGRATED CIRCUITS CD8373 Audio processor — filter and control section Preliminary specification 1995 Feb 17 IC 17 Philips Semiconductors PHILIPS PH ILIPS 7110fl2b 0 0 6 ^ 1 0 3 =120 P relim inary specification Philips S em iconductors Audio processor - filter and control section
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CD8373
711002b
CD8373
OT266-1
7110flBfc>
compandor
CD8373D
CD8373DK
S020
SA5752
SA5753
TDA7050
TDA7050T
UMA1000T
audio compressor expander IC 8 pin
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN 1 GHz video transistor crystal PHILIPS INTERNATIONAL X3A-BFQ268 7110fl2b OGMbldl 7fl3 • P H I N SbE D DESCRIPTION MECHANICAL DATA NPN crystal used in BFQ262 A (SOT32), BFQ265(A) (SOT128) and BFQ268 (SOT172). Crystals are supplied
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X3A-BFQ268
7110fl2b
BFQ262
BFQ265
OT128)
BFQ268
OT172)
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Untitled
Abstract: No abstract text available
Text: BYV31 SERIES SbE D PHILIPS INTERNATIONAL • 7110fl2b D D m B S D bflfl ■ P H I N r - o 3 ~ i ci ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in D O —4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic.
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BYV31
7110fl2b
T-03-19
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transistor B 540
Abstract: TRANSISTOR 1221 sot173 SOT-173 wideband transistor sot173 transistor 541 SOT173 RF transistor
Text: O bjective specification P h ilip s S em icon du ctors T ^ 3 /-2 NPN 9 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES SbE / BFP520 7110fl2b 0045303 7T3 H P H IN PINNING DESCRIPTION PIN • High power gain • Low noise figure 1 collector • High transition frequency
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BFP520
OT173X)
BFP520
OT173
OT173X
7110fl2b
MBC860
OT173.
transistor B 540
TRANSISTOR 1221
sot173
SOT-173
wideband transistor sot173
transistor 541
SOT173 RF transistor
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TS-7P
Abstract: T-33-Z bdv65
Text: BDV65; 65A BDV65B; 65C SbE D PHILIPS INTERNATIONAL • 7110fl2b 0D433b0 3D1 H P H I N T'33-Z SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circu it fo r audio o u tp u t stages and general am plifier and switching applications. PNP complements are BDV64, 64B and 64C.
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BDV65;
BDV65B;
7110fl2b
0D433b0
BDV64,
BDV65
OT-93.
BDV65j
711Dfl2b
DD433bb
TS-7P
T-33-Z
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C3317
Abstract: S95 SMD 1S91 BDS950 BDS952 BDS954 BDS956
Text: PHILIPS INTERNATIONAL SbE D • 7110fl2b D O M B n b 7TS « P H I N Philips Components Data sheet status Product specification date of issue April 1991 BDS950/952/954/956 P » - '7 PNP Silicon epitaxial base power transistors D ESCRIPTIO N PINNING - SOT223
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OT223)
BDS949/951/953/955,
7110fl2b
BDS950/952/954/956
OT223
BDS950
BDS952
BDS954
BDS956
C3317
S95 SMD
1S91
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MARKING CODE R7
Abstract: IEC-134 transistor t4B IEC134 MARKING CODE R7 RF TRANSISTOR common emitter amplifier TRANSISTOR BL 100 LAE6000Q
Text: 7 LAE6000Q M A IN T E N A N C E T Y P E PHILIPS INTERNATIONAL 5bE J> m 7110fl2b D 04blô0 GOT IPHIN LOW-NOISE MICROWAVE TRANSISTOR NPN tran sisto r fo r co m m o n -e m itte r class-A low-noise a m p lifie rs up to 4 G Hz. Self-aligned process e n tire ly ion im planted and gold sandwich m e ta lliza tio n ensure an o p tim u m te m perature p ro file ,
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LAE6000Q
7110fi2t
004bia0
MARKING CODE R7
IEC-134
transistor t4B
IEC134
MARKING CODE R7 RF TRANSISTOR
common emitter amplifier
TRANSISTOR BL 100
LAE6000Q
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BFQ295
Abstract: BFQ296 sot128b
Text: Preliminary specification Philips Semiconductors PNP HDTV video transistor '7 ^ 3 3 5bE T> PH IL IP S I N T E R N A T I O N A L FEATURES • BFQ295 7110fl2b DD M5 b ? 7 132 ■ P H I N PINNING DESCRIPTION PIN • High breakdown voltages • Low output capacitance
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BFQ295
711002b
BFQ296.
BFQ295
OT128B
OT128B.
BFQ296
sot128b
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