2N4125
Abstract: No abstract text available
Text: 2N4125 Amplifier Transistor. Collector-emitter Voltage: Vceo = -30V. C. 1 of 1 Home Part Number: 2N4125 Online Store 2N4125 Diodes Am plifier Transis t o r. C o llec t o r- em it ter Vo ltage: Vc eo = - 3 0 V.
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2N4125
com/2n4125
2N4125
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2N4125
Abstract: 2N4126 2N4125 MOTOROLA 2n4125 equivalent DSA006741
Text: MOTOROLA Order this document by 2N4125/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N4125 2N4126 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4125 2N4126 Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage
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2N4125/D
2N4125
2N4126
2N4125
226AA)
2N4125/D*
2N4126
2N4125 MOTOROLA
2n4125 equivalent
DSA006741
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transistor 2N4125
Abstract: 2N4125 MOTOROLA 2N4125 2n4125 equivalent ku 602 vc transistor2N4125
Text: MOTOROLA Order this document by 2N4125/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor 2N4125 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 30 Vdc Collector – Base Voltage VCBO
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2N4125/D
2N4125
226AA)
transistor 2N4125
2N4125 MOTOROLA
2N4125
2n4125 equivalent
ku 602 vc
transistor2N4125
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2N4125
Abstract: No abstract text available
Text: 2N4125 2N4125 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents of 10 µA to 100 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter
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2N4125
2N4125
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Untitled
Abstract: No abstract text available
Text: 2N4125 2N4125 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents of 10 µA to 100 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter
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2N4125
2N4125TA
2N4125BU
O-92-3
2N4125
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2N4125
Abstract: 2n4125 equivalent CBVK741B019 F63TNR PN2222N transistor 2N4125
Text: 2N4125 2N4125 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents of 10 µA to 100 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter
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Original
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2N4125
2N4125
2n4125 equivalent
CBVK741B019
F63TNR
PN2222N
transistor 2N4125
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Untitled
Abstract: No abstract text available
Text: Small Signal Low Noise Transistors Part No. BC238 BC239 2N4124 2N5089 MPS6521 2N4123 2N5088 MPSA18 2N5210 2N5961 2N4410 BC308 BC309 2N4126 MPS6523 2N4125 PN4248 PN4250 2N5086 2N5087 20070515 Polarity NPN PNP V (A) hFE @ VCE & IC NF Max. Condition IC VCE
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BC238
BC239
2N4124
2N5089
MPS6521
2N4123
2N5088
MPSA18
2N5210
2N5961
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2n4125 equivalent
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor 2N4125 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 30 Vdc Collector – Base Voltage VCBO 30 Vdc Emitter – Base Voltage
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2N4125
226AA)
2n4125 equivalent
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2n4125
Abstract: 2n4126
Text: 2N4125 2N4126 M A XIM U M RATINGS Symbol 2N4125 2N4126 Unit Collector-Emitter Voltage VCEO 30 25 Vdc Collector-Base Voltage VCBO 30 Emitter-Base Voltage vebo 4.0 Vdc Collector Current - Continuous 'c 200 mAdc Total Device Dissipation «'• Derate above 25°C
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2N4125
2N4126
2N4126
T0-92
O-226AA)
FIGURE11
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PDF
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2N4125
Abstract: 2N4126 2n4125 transistor
Text: 2N4125/4126 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: V c e o *= 2N4125:3 0 V 2N4126:25V • Collector Dissipation: Pc max «625mW ABSOLUTE MAXIMUM RATINGS (TA=25t:) Characteristic Collector-Base Voltage Collector-Emitter Voltage
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OCR Scan
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2N4125/4126
2N4125
2N4126
625mW
2N4126
TA-25t;
2n4125 transistor
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PDF
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2N4125
Abstract: 2N4126
Text: 2N4125 2N4126 MAXIMUM RATINGS Rating Sym bol 2N4125 2N4126 v CEO -3 0 -2 5 Vdc Collector-Base Voltage VCBO -3 0 -2 5 Vdc Em itter-Base Voltage C oilector-E m itter Voltage U n it v EBO - 4 .0 Vdc Collector C urrent — C ontinuous >C -200 m Adc Total Device D issipation m T /\ = 253C
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OCR Scan
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2N4125
2N4126
2N4126
O-226AA)
2N4125,
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2n3904 2n3906
Abstract: 2SC1815 2SA1015 2SC1815 2SA1015
Text: SIGNAL TRANSISTORS SM ALL SIGNAL TRANSISTOR Type No. TO-92 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2N5401 2N5550 2N5551 MPS2222 MPS2222A MPS2907 MPS2907A MPSA05 MPSA06 MPSA13 MPSA14 MPSA42 MPSA43 MPSA55 MPSA56 MPSA62 MPSA63 MPSA64
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2N3904
2N3906
2N4123
2N4124
2N4125
2N4126
2N4400
2N4401
2N4403
2N5400
2n3904 2n3906
2SC1815 2SA1015
2SC1815
2SA1015
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LC 300-S
Abstract: 2N41 2N4125
Text: Transistors 2N4125 USHA INDIA LTD AMPLIFIER TRANSISTOR * Collector-Emitter Voltage: Vceo = 2N41 25: 30V TO-92 * Collector Dissipation: Pc (max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit Collector-Base Voltage VcbO -3 0 V
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2N4125
625mW
-55M50
-10nA,
-10hA,
-50mA
-50mA,
100MHz
S300fiS,
LC 300-S
2N41
2N4125
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2N4126
Abstract: 2N41 2N4125 transistor 2N4125 2n4125 transistor Tj150
Text: 2N4125/4126 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: TO-92 = 2N41 25: 3 0 V 2N4126: 25V * Collector Dissipation: Pc m ax =625mW V ceo ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic C ollector-B ase Voltage :2 N 4 1 2 5
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2N4125/4126
2N4126:
625mW
2N4126
-10mA,
2N4125
2N4126
2N41
2N4125
transistor 2N4125
2n4125 transistor
Tj150
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Untitled
Abstract: No abstract text available
Text: 2N4125/4126 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: V ceo =2N41 25: 30V 2N4126: 25V * Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO -3 0
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2N4125/4126
2N4126:
10fiA,
100MHz
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Untitled
Abstract: No abstract text available
Text: 2N4125 2N4126 _ SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in plastic TO -92 packages, p rim a rily intended fo r low -pow er, small-signal a u d io frequency a p p lica tio ns fo r consum er service.
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2N4125
2N4126
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2n4125 transistor
Abstract: 2N4125
Text: TOSHIBA 2N4125 Transistor Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - Iqbo ~ -50nA Max. @ Vqb _ -20V - l(£go ~ -50nA (Max.) @ V^g = -3V • Low Saturation Voltage - VCE(sat) = -0.4V (Max.) @ lc = -50mA, lB = -5mA
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2N4125
-50nA
-50mA,
2N4123
2n4125 transistor
2N4125
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE D bb53R31 ODBfllSE A IAPX 2N 4123 2N4124 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for low-power, small-signal audio frequency applications for consumer service. P-N-P complements are 2N4125 and 2N4126.
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bb53R31
2N4124
2N4125
2N4126.
2N4123
100//A;
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2N3906
Abstract: 2N4125
Text: SA MS UN G SEM IC ONDUCTOR INC ; 2N4125 IME O | 7 ^ 4 1 4 2 0Q0?lb7 S PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: Veso =30 V * Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (T8=25°C)
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OCR Scan
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00071b?
2N4125
625mW
2N3906
T-29-21
100MHz
100/iA,
300jjs,
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2N4126
Abstract: 2N4125 2N4125 NPN 2N4123 2N4124 UBB013
Text: 2N4125 2N4126 PHILIPS INTERNATIONAL SbE J> 711005b 0042bLj4 Ö02 M P H I N T-2^-/7 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in plastic TO -92 envelopes, prim arily intended fo r low-power, small-signal audio frequency applications for consumer service.
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2N4125
2N4126
711005t,
0042bb4
2N4123
2N4124.
2N4126
2N4125 NPN
2N4124
UBB013
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Untitled
Abstract: No abstract text available
Text: 4 TOSHIBA TRANSISTOR 2N4125 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. . Low Leakage Current : ICBO=_50nA(Max.) @ V c b =-20V lEBO=-50nA(Max.) @ V e B=-3V . Low Saturation Voltage : ^ C E ( s a t ) = ~ 0 .
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2N4125
-50nA
-50mA,
2N4123
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2N5219
Abstract: 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE V C E sa t E b v CEO Device T yp e @ 1 0 m A -(V ) Min. M ax. @ l c (m A ) V c e (V ) NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150 2N4124 2N4125 2N4126 2N4400
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2N3903
2N3904
2N3905
2N3906
2N4123
2N4124
2N4125
2N4126
2N4400
225tter-Base
2N5219
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2N3906
Abstract: 2N4125 42761 2N3905 2N4123 2N4124 2N4126 MCS-4277B zc842t70 2n3905A
Text: G □1 E SOLI» STATE f 3875081 G E SOLÏD'STATE DE|3Û7SDÛ1 ' ''' OIE’“ "17927 0D17TS7 D Signal Transistors 2N4123, 2N4124, 2N4125, 2N4126 r - BA SE C U R R E N T l B - m A C O LLE C T O R C U R R E N T ( l c ) - m A 92CS-42777 fig . 9 - Typical basB-lo-emitlersaturalion voltage characteristics lor
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2N4123,
2N4124,
2N4125,
2N4126
92CS-42777
2N3905and
2N3906.
2N3905.
2N3905
2N3906
2N4125
42761
2N4123
2N4124
2N4126
MCS-4277B
zc842t70
2n3905A
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2n3905A
Abstract: 2N4125 2N4125 NPN
Text: G E SOLI» STATE □1 f ' ''' OIE‘“ "17927 3875081 G E SOLÏD'STATE D E | 3 Û 7 S D Û 1 0D17TS7 5 | D Signal Transistors 2N4123, 2N4124, 2N4125, 2N4126 T •2*5-'? BASE C U RR EN T lB - m A C O LLE C T O R C U R R E N T ( lc ) - m A 92CS-42777 Fig. 9 - Typicalbase-to-emittersaturation voltage characteristics for
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0D17TS7
2N4123,
2N4124,
2N4125,
2N4126
92CS-42777
2N3905and
2N3906.
10--Typical
2N3905
2n3905A
2N4125
2N4125 NPN
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