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onsemi 2N5401YBU TRANS PNP 150V 0.6A TO92-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N5401YBU	Bulk	52,709		1	1 $0.19 10 $0.129 100 $0.19 1000 $0.05928 10000 $0.04271	Buy Now
Avnet Americas	2N5401YBU	Bulk		10 Weeks	20,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	2N5401YBU		9,990			1 $0.19 10 $0.129 100 $0.067 1000 $0.054 10000 $0.042	Buy Now
Verical	2N5401YBU		40,741		9,678	1 - 10 - 100 - 1000 - 10000 $0.0388	Buy Now
	2N5401YBU		37,955		9,678	1 - 10 - 100 - 1000 - 10000 $0.0388	Buy Now
	2N5401YBU		24,764		9,678	1 - 10 - 100 - 1000 - 10000 $0.0388	Buy Now
	2N5401YBU		20,000		1,500	1 - 10 - 100 - 1000 - 10000 $0.1264	Buy Now
Newark	2N5401YBU	Bulk			10,000	1 - 10 - 100 - 1000 - 10000 $0.057	Buy Now

Rochester Electronics	2N5401YBU		103,460		1	1 $0.0365 10 $0.0365 100 $0.0343 1000 $0.031 10000 $0.031	Buy Now
ComSIT USA	2N5401YBU		20			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Asia	2N5401YBU			10 Weeks	20,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	2N5401YBU		20,000			1 - 10 - 100 - 1000 $0.0393 10000 $0.0355	Buy Now
onsemi 2N5401YTA TRANS PNP 150V 0.6A TO92-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N5401YTA	Cut Tape	6,103		1	1 $0.19 10 $0.129 100 $0.19 1000 $0.0591 10000 $0.0591	Buy Now
	2N5401YTA	Ammo Pack	2,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.04258	Buy Now
Avnet Americas	2N5401YTA	Ammo Pack		10 Weeks	20,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	2N5401YTA		6,000			1 $0.19 10 $0.129 100 $0.066 1000 $0.06 10000 $0.039	Buy Now
Verical	2N5401YTA		16,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.0417	Buy Now
	2N5401YTA		6,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.0426	Buy Now
Arrow Electronics	2N5401YTA		14,000	10 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.0303	Buy Now
	2N5401YTA		6,000	10 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.0426	Buy Now

Newark	2N5401YTA	Bulk			2,000	1 - 10 - 100 - 1000 $0.062 10000 $0.057	Buy Now
TME	2N5401YTA		560		20	1 - 10 - 100 $0.0678 1000 $0.0599 10000 $0.0467	Buy Now
Master Electronics	2N5401YTA		16,000			1 - 10 - 100 - 1000 - 10000 $0.0354	Buy Now
Diotec Semiconductor AG 2N5401 BJT TO-92 150V 600MA PNP 0.625W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N5401	Cut Tape	3,598		1	1 $0.15 10 $0.093 100 $0.15 1000 $0.03627 10000 $0.03195	Buy Now
	2N5401	Ammo Pack			4,000	1 - 10 - 100 - 1000 - 10000 $0.02521	Buy Now
Mouser Electronics	2N5401		11,805			1 $0.11 10 $0.068 100 $0.046 1000 $0.028 10000 $0.024	Buy Now
Verical	2N5401		28,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.0274	Buy Now
	2N5401		9,550		3,175	1 - 10 - 100 - 1000 - 10000 $0.0206	Buy Now
	2N5401		1,516		379	1 - 10 - 100 - 1000 $0.0131 10000 $0.0131	Buy Now
Arrow Electronics	2N5401		1,800	5 Weeks	1	1 $0.013 10 $0.013 100 $0.013 1000 $0.013 10000 $0.013	Buy Now
Onlinecomponents.com	2N5401		31,210			1 - 10 - 100 - 1000 - 10000 $0.0198	Buy Now

TME	2N5401		9,550		25	1 - 10 - 100 $0.0232 1000 $0.0186 10000 $0.0173	Buy Now
IBS Electronics	2N5401				4,000	1 - 10 - 100 - 1000 - 10000 $0.01751	Buy Now
Master Electronics	2N5401		31,210			1 - 10 - 100 - 1000 - 10000 $0.0198	Buy Now
Central Semiconductor Corp CP736V-2N5401-CT20 TRANS PNP 150V 0.6A DIE 1=20PCS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CP736V-2N5401-CT20	Tray	4		1	1 $131.03 10 $131.03 100 $131.03 1000 $131.03 10000 $131.03	Buy Now
onsemi 2N5401 TRANS PNP 150V 0.6A TO92
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N5401	Bulk			20,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	2N5401		650			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	2N5401		4,724			1 $1 10 $1 100 $1 1000 $1 10000 $0.175	Buy Now
	2N5401		4,030			1 $0.15 10 $0.15 100 $0.0675 1000 $0.045 10000 $0.045	Buy Now

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2N5401 Datasheets (125)

Part	Manufacturer	Description	Datasheet Type	PDF
2N5401	AUK	PNP Silicon Transistor (General purpose amplifier High voltage application)	Original	PDF
2N5401	Central Semiconductor	Small Signal Transistors TO-92 Case (Continued)	Original	PDF
2N5401	Fairchild Semiconductor	PNP General Purpose Amplifier	Original	PDF
2N5401	Fairchild Semiconductor	PNP General Purpose Amplifier	Original	PDF
2N5401	Fairchild Semiconductor	PNP General Purpose Amplifier	Original	PDF
2N5401	Fairchild Semiconductor	PNP General Purpose Amplifier	Original	PDF
2N5401	Kexin	PNP General Purpose Amplifier	Original	PDF
2N5401	Korea Electronics	TRANS GP BJT PNP 150V 0.6A 3TO-92	Original	PDF
2N5401	Micro Commercial Components	TRANS GP BJT PNP 150V 0.6A 3TO-92	Original	PDF
2N5401	NXP Semiconductors	PNP high-voltage transistor	Original	PDF
2N5401	On Semiconductor	2N5401 - TRANSISTOR 600 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, 3 PIN, BIP General Purpose Small Signal	Original	PDF
2N5401	On Semiconductor	Amplifier Transistor (PNP Silicon)	Original	PDF
2N5401	Philips Semiconductors	PNP high-voltage transistor	Original	PDF
2N5401	Philips Semiconductors	Small-signal Transistors	Original	PDF

2N5401	ROHM	General Purpose Bipolar Transistor, PNP, 150V, TO-92, 3-Pin	Original	PDF
2N5401	Sinyork	Mini size of Discrete semiconductor elements	Original	PDF
2N5401	Transys Electronics	Plastic-Encapsulated Transistors	Original	PDF
2N5401	TY Semiconductor	PNP General Purpose Amplifier - TO-92	Original	PDF
2N5401	Various Russian Datasheets	Transistor	Original	PDF
2N5401	Weitron	PNP Transistors	Original	PDF

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2N5401 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N5401G Abstract: No abstract text available Text: 2N5401 Amplifier Transistors PNP Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 150 Vdc Collector − Base Voltage VCBO 160 Vdc Emitter − Base Voltage	Original	PDF	2N5401 2N5401/D 2N5401G
Untitled Abstract: No abstract text available Text: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES Collector-Emitter Voltage: VCEO=-150V Collector Dissipation: Pc max =625mW High current gain 1 APPLICATIONS Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE	Original	PDF	2N5401 -150V 625mW QW-R201-001
diode 2N5401 Abstract: 2N5401 2n5401 148 Text: DC COMPONENTS CO., LTD. 2N5401 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Base 3 = Collector o 2 Typ	Original	PDF	2N5401 -10mA, -50mA, 100MHz diode 2N5401 2N5401 2n5401 148
2N5401 Abstract: transistor 2N5401 1N914 2N5400 Text: ON Semiconductort 2N5401* Amplifier Transistors PNP Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector–Emitter Voltage VCEO 120 150 Vdc Collector–Base Voltage VCBO 130 160 Vdc Emitter–Base Voltage VEBO	Original	PDF	2N5401* 2N5400 2N5401 226AA) r14525 2N5401/D 2N5401 transistor 2N5401 1N914 2N5400
2N5401UB06 Abstract: No abstract text available Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet — production data Features 3 BVCEO 150 V IC max 0.5 A 1 1 2 2 3 HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics	Original	PDF	2N5401HR 2N5401HR 2N5401UB06
transistor 2N5401 Abstract: 2N5401 2N5551 CMLT5554 Text: CMLT5554 SURFACE MOUNT DUAL,COMPLEMENTARY HIGH VOLTAGE SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m The CENTRAL SEMICONDUCTOR CMLT5554 consists of one 2N5551 NPN silicon transistor and one individual isolated complementary 2N5401 PNP silicon transistor, manufactured by the epitaxial planar process	Original	PDF	CMLT5554 2N5551 2N5401 OT-563 100MHz 20-January transistor 2N5401 CMLT5554
Untitled Abstract: No abstract text available Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components 2N5401 HDWXUHV z z • PNP Silicon Through Hole Package 150oC Junction Temperature Case Material: Molded Plastic. UL Flammability	Original	PDF	2N5401 625mW 150oC
2N5401 Abstract: transistor 2N5401 2N5400 2N5550 2N5551 st2n5401 Text: ST 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.	Original	PDF	2N5400 2N5401 2N5550 2N5551 2N5400 2N5401 transistor 2N5401 st2n5401
2n5401 smd Abstract: 2n5401ub SOC5401 SOC5401SW 2N5401UB1 TRANSISTOR SMD CODES SOC5401HRB escc 2n5401 transistor TRANSISTOR SMD MARKING CODES Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V - 0.5 A Features 3 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C 1 1 2 2 3 TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■	Original	PDF	2N5401HR 2N5401HR 2n5401 smd 2n5401ub SOC5401 SOC5401SW 2N5401UB1 TRANSISTOR SMD CODES SOC5401HRB escc 2n5401 transistor TRANSISTOR SMD MARKING CODES
transistor 2n5401 Abstract: transistor 2N5401L 2n5401l 2N5401 2n5401 transistor Text: UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 1 FEATURES SOT-89 * Collector-emitter voltage: VCEO = -150V * High current gain 1 TO-92 *Pb-free plating product number:2N5401L ORDERING INFORMATION Order Number	Original	PDF	2N5401 OT-89 -150V 2N5401L 2N5401-x-AB3-R 2N5401L-x-AB3-R 2N5401-x-T92-B 2N5401L-x-T92-B 2N5401-x-T92-K 2N5401L-x-T92-K transistor 2n5401 transistor 2N5401L 2n5401l 2N5401 2n5401 transistor
2N5401 Abstract: No abstract text available Text: 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.	Original	PDF	2N5400 2N5401 2N5550 2N5551 2N5400 2N5401
2N5401 Abstract: 2N5400 10D3 2N5550 2N5551 Text: 2N5400 / 2N5401 2N5400 / 2N5401 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2006-06-17 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case	Original	PDF	2N5400 2N5401 UL94V-0 2N5400 2N5550 2N5551 2N5401 10D3 2N5551
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR 2N5401C TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V N E K Low Leakage Current. G D J : ICBO=-50nA Max. @VCB=-120V	Original	PDF	2N5401C -160V, -150V -50nA -120V -50mA, -10mA, 100MHz
transistor 2n5401 Abstract: 2N5401 Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5401 9SA TO- 92 CBE High Voltage PNP Transistor For General Purpose And Telephony Applications.	Original	PDF	2N5401 25deg C-120 transistor 2n5401 2N5401

2N5401 Abstract: 2n5401 application Text: SEMICONDUCTOR 2N5401 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES ᴌHigh Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V N E K ᴌLow Leakage Current. : ICBO=-50nA Max. @VCB=-120V	Original	PDF	2N5401 -160V, -150V -50nA -120V -50mA, -10mA, 100MHz 2N5401 2n5401 application
2N5401 Abstract: CBVK741B019 F63TNR MMBT5401 PN2222N 2N5401 SOT-23 mark 2L SOT-23 RB103 Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	PDF	2N5401 MMBT5401 2N5401 OT-23 CBVK741B019 F63TNR MMBT5401 PN2222N 2N5401 SOT-23 mark 2L SOT-23 RB103
2N5401 Abstract: No abstract text available Text: i TOSHIBA TRANSISTOR 2N5401 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VC b o =-160V, VCe o = -150V . Low Leakage Current : ICB0=5-50nA(Max. ) @ V c b = - 120V	OCR Scan	PDF	2N5401 -160V, 5-50nA -50mA, -10mA 100MHz 10Hz-15 2N5401
Untitled Abstract: No abstract text available Text: 2N5400 2N5550 2N 5401 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 1 CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.	OCR Scan	PDF	2N5400 2N5550 2N5551 O-92A 2N5400, 2N5401 2N5550,
2N5401 Abstract: N5400 2N5400 MOTOROLA 2N5400 Text: Am plifier T ra n sisto rs 2N 5400 2N 5401* PNP Silicon "M otorola P referre d D evice COLLECTOR 3 Boca Semiconductor Corp. BSC 2 BASE 1 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol 2N5400 2N5401 Unit VCEO 120 150 Vdc C o lle c to r-B a s e Voltage	OCR Scan	PDF	N5400 2N5401* 2N5400 2N5401 O-226AA) 2N5400 MOTOROLA
2N5400 Abstract: 2n5401 Text: 2N5400 2N5401* M AXIMUM RATINGS Rating Sym bol 2N5400 2N5401 Unit Collector-Emitter Voltage VcEO -1 2 0 -1 5 0 Vdc C ollector-Base Voltage v CBO - 130 -1 6 0 Vdc Emitter-Base Voltage VEBO -5 .0 Vdc Collector Current — C o ntin uou s 'c -6 0 0 m A dc Total Device Dissipation	OCR Scan	PDF	2N5400 2N5401* 2N5401 O-226AA) 2N5400, 2N5401
2N5550 EBC Abstract: 2N5401 2N5400 5551 2N5550 T092A T0-92A N5400 Text: 2N5401 2N5551 2N 5550 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS i CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.	OCR Scan	PDF	2n5400, 2n5401 2n5550, 2n5551 T0-92A 2n5400 2n555q 2n5551 600mA 2N5550 EBC 2N5401 2N5400 5551 2N5550 T092A N5400
2N5401S Abstract: No abstract text available Text: SEMICONDUCTOR TECHNICAL DATA 2N5401S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : V cbo=-160V, V CEo=-150V •3 MAXIMUM RATINGS Ta=25°C RATING UNIT Collector-Base Voltage	OCR Scan	PDF	2N5401S -160V, -150V -50mA, -10j/A, -10mA -50mA -10mA, 2N5401S
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR TECHNICAL DATA 2N5401 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : V cbo=-160V, V ceo=-150V • Low Leakage Current. : ICbo= -50nA Max. @VCB=-120V • Low Saturation Voltage	OCR Scan	PDF	2N5401 -160V, -150V -50nA -120V -50mA, -120V, -10mA
Untitled Abstract: No abstract text available Text: FORWARD INTERNATIONAL ELECTRONICS L ID . 2N5401 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR A M P L IF IE R T R A N SIST O R Packajp: TO-92 * Collector-Emitter Voltage VCEO=-150V * Collector Dissipation Pc MAX =625 mW at Characteristic Symbol Rating	OCR Scan	PDF	2N5401 -150V -100uA -10uA -120V -50mA -10mA -50mA

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onsemi 2N5401YBU

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2N5401 Datasheets (125)

2N5401 Datasheets Context Search

2N5401G

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diode 2N5401

2N5401

2N5401UB06

transistor 2N5401

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2N5401

2n5401 smd

transistor 2n5401

2N5401

2N5401

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transistor 2n5401

2N5401

2N5401

2N5401

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2N5401

2N5400

2N5550 EBC

2N5401S

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