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    2N5550 Search Results

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    2N5550 Price and Stock

    Rochester Electronics LLC 2N5550RLRP

    TRANS NPN 140V 0.6A TO92
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2N5550RLRP Bulk 164,000 6,662
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    Rochester Electronics LLC 2N5550TFR

    TRANS NPN 140V 0.6A TO-92-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2N5550TFR Bulk 112,874 7,755
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    Rochester Electronics LLC 2N5550TF

    TRANS NPN 140V 0.6A TO-92-3
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    DigiKey 2N5550TF Bulk 29,681 11,539
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    Rochester Electronics LLC 2N5550TA

    TRANS NPN 140V 0.6A TO-92-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2N5550TA Bulk 29,620 7,755
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    Rochester Electronics LLC 2N5550-D26Z

    TRANS NPN 140V 0.6A TO-92-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2N5550-D26Z Bulk 21,000 11,539
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    Find more 2N5550 price and stock on Findchips.com

    2N5550 Datasheets (78)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5550 Central Semiconductor Small Signal Transistors TO-92 Case (Continued) Original PDF
    2N5550 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original PDF
    2N5550 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    2N5550 Korea Electronics TRANS GP BJT NPN 140V 0.6A 3TO-92 Original PDF
    2N5550 On Semiconductor Amplifier Transistors NPN Silicon Original PDF
    2N5550 On Semiconductor Amplifier Transistor NPN Original PDF
    2N5550 On Semiconductor Amplifier Transistors NPN Original PDF
    2N5550 Philips Semiconductors NPN high-voltage transistors Original PDF
    2N5550 Philips Semiconductors Small-signal Transistors Original PDF
    2N5550 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N5550 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N5550 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan PDF
    2N5550 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N5550 Honey Technology 140 V, NPN silicon expitaxial planar transistor Scan PDF
    2N5550 Korea Electronics EPITAXIAL PLANAR NPN TRANSISTOR Scan PDF
    2N5550 Korea Electronics High Voltage Transistor Scan PDF
    2N5550 Micro Electronics High Voltage Transistors Scan PDF
    2N5550 Micro Electronics SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS Scan PDF
    2N5550 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N5550 Micro Electronics Semiconductor Devices Scan PDF

    2N5550 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N5551 circuit

    Abstract: 2N5550 2N5551 2N555 1N914
    Text: ON Semiconductort 2N5550 2N5551* Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector–Emitter Voltage VCEO 140 160 Vdc Collector–Base Voltage VCBO 160 180 Vdc Emitter–Base Voltage


    Original     		2N5550 2N5551* 2N5551 226AA) r14525 2N5550/D 2N5551 circuit 2N5550 2N5551 2N555 1N914 PDF

    transistor 2n5550

    Abstract: 2N5550
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5550 TO-92 Plastic Package High Voltage NPN Transistor For General Purpose and Telephony Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


    Original     		2N5550 C-120 2N5550Rev190701 transistor 2n5550 2N5550 PDF

    transistor 2n5550

    Abstract: 2N5550
    Text: SEMICONDUCTOR 2N5550 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking 2N 1 5550 K 3 No. Item 816 2 4 Marking Description 2N Series Name 5550 Device Name KEC K KEC CORP. Lot No. 816 Device Name 1998. 6. 23 Revision No : 0 8 Year


    Original     		2N5550 transistor 2n5550 2N5550 PDF

    2N555

    Abstract: 2N5550S SOT-23 2N5550S
    Text: SEMICONDUCTOR 2N5550S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZP 1 2 Item Marking Description Device Mark ZP 2N5550S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		2N5550S OT-23 2N555 2N5550S SOT-23 2N5550S PDF

    transistor 2n5550

    Abstract: 2N5550
    Text: SEMICONDUCTOR 2N5550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES High Collector Breakdwon Voltage : VCBO=160V, VCEO=140V N E K Low Leakage Current. G D J : ICBO=100nA Max. , VCB=100V


    Original     		2N5550 100nA 100MHz transistor 2n5550 2N5550 PDF

    2N5550

    Abstract: No abstract text available
    Text: 2N5550 0.6 A, 160 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Switching and amplification in high voltage Applications such as telephony Low current max.600mA


    Original     		2N5550 600mA) 8-Mar-2010 100MHz 2N5550 PDF

    2N5401

    Abstract: transistor 2N5401 2N5400 2N5550 2N5551 st2n5401
    Text: ST 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.


    Original     		2N5400 2N5401 2N5550 2N5551 2N5400 2N5401 transistor 2N5401 st2n5401 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5400 2N5550 2N 5401 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 1 CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.


    OCR Scan     		2N5400 2N5550 2N5551 O-92A 2N5400, 2N5401 2N5550, PDF

    2N5550

    Abstract: 2N5551
    Text: 2N5550 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR * C o lle cto r-E m itte r Voltage: Veto =140V • C o lle c to r D issip a tio n : P c m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta =25°C) C h a ra c te ristic Collector-Base Voltage Collector-Em itter Voltage


    OCR Scan     		2N5550 625mW 2N5551 100MHz 250mA, 2N5550 PDF

    2N5401

    Abstract: No abstract text available
    Text: 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.


    Original     		2N5400 2N5401 2N5550 2N5551 2N5400 2N5401 PDF

    2SC9830

    Abstract: 2SC983Y BSW69 2SC983-Y BF119 mps-002 SK3244 BF117 bf305 A5T5550
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 >= PMBT5550 PMBT5550 BFY43 BFY43 BF117 BF117 MPS002 TRS140 SE701S A5T5550 2N5550 TMPT5550 MMBT5550 MMBT5550 MMBT5550 2N5831 MMBT5551 JE5550A 2N5832 BC532 ~4261r 25 30 - 2N4270 JE5550 BSR19 A BSR19 (A)


    Original     		205AO 92var 220AB 220AB A220AB OT-89 O-92var OT-89 O-92var 2SC9830 2SC983Y BSW69 2SC983-Y BF119 mps-002 SK3244 BF117 bf305 A5T5550 PDF

    2n 5550

    Abstract: 2N5551 diodes inc 2n5551
    Text: MOTOROLA Order this document by 2N5550/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N 5551* NPN Silicon COLLECTOR 3 MAXIMUM RATINGS Symbol 2N5550 2N5551 Unit C o lle c to r-E m itte r Voltage Rating VCEO 140 160 Vdc C o lle c to r-B a s e Voltage


    OCR Scan     		2N5550/D 2N5550 2N5550 2N5551 2n 5550 2N5551 diodes inc 2n5551 PDF

    2n5551

    Abstract: 2N5550 st 2n5551
    Text: 2N5550 2N5551* M AXIM UM RATINGS Sym bol 2N5550 2N5551 U n it C oilector-E m itter Voltage VCEO 140 160 Vdc Collector-Base Voltage v CBO 160 180 Vdc Emitter-Base Voltage R ating v EBO 6.0 Vdc C ollector C urrent — C ontinuous 'c 600 m Adc Total Device D issipation


    OCR Scan     		2N5550 2N5551* 2N5551 O-226AA) 2N5550, 2N5551 st 2n5551 PDF

    2N5551

    Abstract: 2N5550 2N5550G 2N55551 2N5551G 2N55551ZL1G 2N5551 TO92 2N5550RLRPG 2N5551RL1G 2N5551RLRAG
    Text: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value VCEO Vdc 140 160 2N5550 2N5551 Collector − Base Voltage VCBO Vdc VEBO


    Original     		2N5550, 2N5551 2N5550 2N5551 2N5550 2N5550G 2N55551 2N5551G 2N55551ZL1G 2N5551 TO92 2N5550RLRPG 2N5551RL1G 2N5551RLRAG PDF

    diodes inc 2N5551

    Abstract: 2N555 2N5551 hz 9102 2N5400 2N5401 2N5550 BP317 C2N5550
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification Supersedes data of 1997 Apr 09 1999 Apr 23 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 PINNING


    Original     		M3D186 2N5550; 2N5551 2N5400 2N5401. MAM279 SCA63 115002/00/03/pp8 diodes inc 2N5551 2N555 2N5551 hz 9102 2N5401 2N5550 BP317 C2N5550 PDF

    2N5550 EBC

    Abstract: 2N5401 2N5400 5551 2N5550 T092A T0-92A N5400
    Text: 2N5401 2N5551 2N 5550 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS i CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.


    OCR Scan     		2n5400, 2n5401 2n5550, 2n5551 T0-92A 2n5400 2n555q 2n5551 600mA 2N5550 EBC 2N5401 2N5400 5551 2N5550 T092A N5400 PDF

    TE 555-1

    Abstract: No abstract text available
    Text: 2N5550 2N5551 FOR MORE DETAILED INFORMATION SEE LATEST ISSUE OF HANDBOOK SC04 OR DATA SHEET SILICON N-P-N HIGH-VOLTAGE TRANSISTORS N -P -N high-voltage small-signal transistors fo r general purposes and especially te le p h o n y applications and encapsulated in a T O -9 2 package.


    OCR Scan     		2N5550 2N5551 TE 555-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5550 / 2N5551 2N5550 / 2N5551 General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2005-12-22 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions / Maße [mm] 625 mW Plastic case


    Original     		2N5550 2N5551 UL94V-0 2N5550 2N5400 2N5401 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5550 / 2N5551 2N5550 / 2N5551 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2006-06-17 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case


    Original     		2N5550 2N5551 UL94V-0 2N5550 2N5400 PDF

    TRANSISTOR 2N5550

    Abstract: 2n5551 2N5551 DATA C2N5550 2N5400 2N5401 2N5550 SC-43A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification Supersedes data of 1999 Apr 23 2004 Oct 28 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES


    Original     		M3D186 2N5550; 2N5551 2N5400 2N5401. MAM279 SCA76 R75/04/pp7 TRANSISTOR 2N5550 2n5551 2N5551 DATA C2N5550 2N5401 2N5550 SC-43A PDF

    2N5551

    Abstract: 2N5550 2N555 ic CD4081 pin diagram datasheet 2N5400 2N5401 st 2n5551
    Text: ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors ST 2N5400 and ST 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations.


    Original     		2N5550 2N5551 2N5400 2N5401 2N5550 100MHz 2N5551 2N555 ic CD4081 pin diagram datasheet st 2n5551 PDF

    2n3904 2n3906

    Abstract: 2SC1815 2SA1015 2SC1815 2SA1015
    Text: SIGNAL TRANSISTORS SM ALL SIGNAL TRANSISTOR Type No. TO-92 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2N5401 2N5550 2N5551 MPS2222 MPS2222A MPS2907 MPS2907A MPSA05 MPSA06 MPSA13 MPSA14 MPSA42 MPSA43 MPSA55 MPSA56 MPSA62 MPSA63 MPSA64


    OCR Scan     		2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2n3904 2n3906 2SC1815 2SA1015 2SC1815 2SA1015 PDF

    TE 555-1

    Abstract: 2N5551A A5T5550 5551a 2n5550a 5T5551 BR N 5551
    Text: TY P ES 2N5550, 2N5551, A5T5550. A5T5551 N -P -N SILIC O N TR A N S IS TO R S B U L L E T IN N O . D L -S 7 3 1 1 9 3 5 , M A R C H 1 9 7 3 S ILE C T t TR A N SISTO R S* FOR G E N E R A L PURPOSE, H IG H -V O LT A G E A M P L IF IE R A PPLICATIO N S • High V B R C EO • ■■140 V (2N 5550, A 5 T 5 55 0) or 160 V (2N 5551, A 5T5551)


    OCR Scan     		2N5550, 2N5551, A5T5550. A5T5551 5T5551) 100-mil TE 555-1 2N5551A A5T5550 5551a 2n5550a 5T5551 BR N 5551 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR 2N5550 AMPLIFIER TRANSISTOR • Collector-Em itter Voltage: Veto =140V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (T. =25°C) Characteristic Symbol Collector-Base Vbltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		2N5550 625mW 2N5551 100MHz 250/iA, 002S03R PDF