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    2N5400 Search Results

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    2N5400 Price and Stock

    Harwin M83-LFT1F2N54-0000-000

    CONN RCPT 54POS 0.079 GOLD PCB
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    DigiKey M83-LFT1F2N54-0000-000 Tray 61 1
    • 1 $51.41
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    • 100 $35.1625
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    Mouser Electronics M83-LFT1F2N54-0000-000
    • 1 $59.96
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    Newark M83-LFT1F2N54-0000-000 Bulk 90
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    TTI M83-LFT1F2N54-0000-000 Tray 90
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    Avnet Abacus M83-LFT1F2N54-0000-000 13 Weeks 90
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    Harwin M83-LFD1F2N54-0000-000

    CONN RCPT 54POS CRIMP 22AWG GOLD
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    DigiKey M83-LFD1F2N54-0000-000 Tray 24 1
    • 1 $49.65
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    • 100 $33.84375
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    Mouser Electronics M83-LFD1F2N54-0000-000 17
    • 1 $57.86
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    Newark M83-LFD1F2N54-0000-000 Bulk 16
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    TTI M83-LFD1F2N54-0000-000 Tube 8 8
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    Avnet Abacus M83-LFD1F2N54-0000-000 8 Weeks 16
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    Harwin M83-LMT1M2N54-0000-000

    CONN HEADER VERT 54POS 2MM
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    DigiKey M83-LMT1M2N54-0000-000 Tray 23 1
    • 1 $21.57
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    • 100 $14.55619
    • 1000 $13.595
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    Mouser Electronics M83-LMT1M2N54-0000-000 278
    • 1 $22.23
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    • 100 $16.84
    • 1000 $14.1
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    Newark M83-LMT1M2N54-0000-000 Bulk 36
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    Avnet Abacus M83-LMT1M2N54-0000-000 24 10 Weeks 12
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    onsemi 2N5400

    TRANS PNP 120V 0.6A TO92
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    DigiKey 2N5400 Bulk 20,000
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    Avnet Americas 2N5400 Box 2,500
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    onsemi 2N5400G

    TRANS PNP 120V 0.6A TO92
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    DigiKey 2N5400G Bulk 20,000
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    Bristol Electronics 2N5400G 7,550 20
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    • 100 $0.1313
    • 1000 $0.0788
    • 10000 $0.0394
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    Quest Components 2N5400G 6,040
    • 1 $0.35
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    Rochester Electronics 2N5400G 14,086 1
    • 1 $0.0433
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    • 100 $0.0407
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    2N5400 Datasheets (62)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5400 Central Semiconductor Small Signal Transistors TO-92 Case (Continued) Original PDF
    2N5400 Fairchild Semiconductor PNP General Purpose Amplifier Original PDF
    2N5400 Fairchild Semiconductor PNP General Purpose Amplifier Original PDF
    2N5400 Korea Electronics High Voltage Transistor Original PDF
    2N5400 ON Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS SS PNP 120V 600MA TO-92 Original PDF
    2N5400 On Semiconductor Amplifier Transistor PNP Original PDF
    2N5400 Philips Semiconductors Small-signal Transistors Original PDF
    2N5400 Boca Semiconductor Amplifier Transistor PNP Silicon Scan PDF
    2N5400 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N5400 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N5400 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
    2N5400 Fairchild Semiconductor PNP General Purpose Amplifier Scan PDF
    2N5400 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N5400 Honey Technology 120 V, PNP silicon expitaxial planar transistor Scan PDF
    2N5400 Korea Electronics EPITAXIAL PLANAR PNP TRANSISTOR Scan PDF
    2N5400 Korea Electronics High Voltage Transistor Scan PDF
    2N5400 Micro Electronics High Voltage Transistors Scan PDF
    2N5400 Micro Electronics SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS Scan PDF
    2N5400 Micro Electronics Semiconductor Devices Scan PDF
    2N5400 Micro Electronics Semiconductor Device Data Book Scan PDF

    2N5400 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5401

    Abstract: transistor 2N5401 1N914 2N5400
    Text: ON Semiconductort 2N5401* Amplifier Transistors PNP Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector–Emitter Voltage VCEO 120 150 Vdc Collector–Base Voltage VCBO 130 160 Vdc Emitter–Base Voltage VEBO


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    PDF 2N5401* 2N5400 2N5401 226AA) r14525 2N5401/D 2N5401 transistor 2N5401 1N914 2N5400

    Untitled

    Abstract: No abstract text available
    Text: 2N5400 S/S TR CD-ROM Edition.1.1 This Data Sheet is subject to change without notice. Page : 1 (2N5400) (C) 1994 Samsung Electronics Printed in Korea.


    Original
    PDF 2N5400 2N5400)

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N5400S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES D ・High Collector Breakdwon Voltage 2 A 3 G : VCBO=-130V, VCEO=-120V H ・Low Leakage Current. 1 : ICBO=-100nA Max. @VCB=-100V


    Original
    PDF 2N5400S -100nA -100V -50mA, -130V, -120V -100V, -10mA -50mA

    2N5401

    Abstract: transistor 2N5401 2N5400 2N5550 2N5551 st2n5401
    Text: ST 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.


    Original
    PDF 2N5400 2N5401 2N5550 2N5551 2N5400 2N5401 transistor 2N5401 st2n5401

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N5400 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES High Collector Breakdwon Voltage : VCBO=-130V, VCEO=-120V N E K Low Leakage Current. G D J : ICBO=-100nA Max. @VCB=-100V


    Original
    PDF 2N5400 -130V, -120V -100nA -100V -50mA, -100V, -10mA -50mA

    2N5401

    Abstract: No abstract text available
    Text: 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.


    Original
    PDF 2N5400 2N5401 2N5550 2N5551 2N5400 2N5401

    2N5401

    Abstract: 2N5400 10D3 2N5550 2N5551
    Text: 2N5400 / 2N5401 2N5400 / 2N5401 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2006-06-17 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case


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    PDF 2N5400 2N5401 UL94V-0 2N5400 2N5550 2N5551 2N5401 10D3 2N5551

    2N5400

    Abstract: CBVK741B019 F63TNR PN2222N
    Text: 2N5400 2N5400 C B TO-92 E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage


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    PDF 2N5400 2N5400 CBVK741B019 F63TNR PN2222N

    Untitled

    Abstract: No abstract text available
    Text: 2N5400 2N5400 C B TO-92 E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage


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    PDF 2N5400

    Untitled

    Abstract: No abstract text available
    Text: 2N5400 / 2N5401 2N5400 / 2N5401 General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2005-12-21 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions / Maße [mm] 625 mW Plastic case


    Original
    PDF 2N5400 2N5401 UL94V-0 2N5400 2N5550 2N5551

    Untitled

    Abstract: No abstract text available
    Text: 2N5400 / 2N5401 2N5400 / 2N5401 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2006-06-17 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case


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    PDF 2N5400 2N5401 UL94V-0 2N5400 2N5550 2N5551

    2N5551

    Abstract: 2N5550 2N555 ic CD4081 pin diagram datasheet 2N5400 2N5401 st 2n5551
    Text: ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors ST 2N5400 and ST 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations.


    Original
    PDF 2N5550 2N5551 2N5400 2N5401 2N5550 100MHz 2N5551 2N555 ic CD4081 pin diagram datasheet st 2n5551

    2N5401

    Abstract: 1N914 2N5400
    Text: MOTOROLA Order this document by 2N5400/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N5401* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector – Emitter Voltage


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    PDF 2N5400/D 2N5400 2N5401* 2N5400 2N5401 226AA) 2N5401 1N914

    2N5457

    Abstract: No abstract text available
    Text: 2N5401 Preferred Device Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector − Emitter Voltage VCEO 120 150 Vdc Collector − Base Voltage


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    PDF 2N5401 2N5400 2N5401 2N5457

    2N5400

    Abstract: 2N5401
    Text: 2N5400 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring high voltages. Sourced from Process 74. See 2N5401 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original
    PDF 2N5400 2N5401 2N5400

    Untitled

    Abstract: No abstract text available
    Text: 2N5400 2N5550 2N 5401 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 1 CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.


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    PDF 2N5400 2N5550 2N5551 O-92A 2N5400, 2N5401 2N5550,

    2N5400

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA 2N5400 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCbo=-130V, VCeo=-120V • Low Leakage Current. : IcBo=-100nA Max. @VCB=-100V • Low Saturation Voltage


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    PDF 2N5400 -130V, -120V -100V -50mA, -10JUA, -10mA -50mA -10mA, 2N5400

    2N5401

    Abstract: N5400 2N5400 MOTOROLA 2N5400
    Text: Am plifier T ra n sisto rs 2N 5400 2N 5401* PNP Silicon "M otorola P referre d D evice COLLECTOR 3 Boca Semiconductor Corp. BSC 2 BASE 1 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol 2N5400 2N5401 Unit VCEO 120 150 Vdc C o lle c to r-B a s e Voltage


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    PDF N5400 2N5401* 2N5400 2N5401 O-226AA) 2N5400 MOTOROLA

    2N5400

    Abstract: 2n5401
    Text: 2N5400 2N5401* M AXIMUM RATINGS Rating Sym bol 2N5400 2N5401 Unit Collector-Emitter Voltage VcEO -1 2 0 -1 5 0 Vdc C ollector-Base Voltage v CBO - 130 -1 6 0 Vdc Emitter-Base Voltage VEBO -5 .0 Vdc Collector Current — C o ntin uou s 'c -6 0 0 m A dc Total Device Dissipation


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    PDF 2N5400 2N5401* 2N5401 O-226AA) 2N5400, 2N5401

    2N5550 EBC

    Abstract: 2N5401 2N5400 5551 2N5550 T092A T0-92A N5400
    Text: 2N5401 2N5551 2N 5550 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS i CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.


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    PDF 2n5400, 2n5401 2n5550, 2n5551 T0-92A 2n5400 2n555q 2n5551 600mA 2N5550 EBC 2N5401 2N5400 5551 2N5550 T092A N5400

    Untitled

    Abstract: No abstract text available
    Text: SEM IC O N D U C T O R 2N5400S TECHN ICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. L B L D IM FEATURES • High Collector Breakdwon Voltage 2.93 ± 0.20 B 1.3040.20/-0.15 C : V cbo=-130V, V ceo=-120V • Low Leakage Current.


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    PDF 2N5400S -130V, -120V -100nA -100V -50mA, OT-23 300/iS,

    2N5401

    Abstract: 1N914 2N5400 2N5400 MOTOROLA
    Text: MOTOROLA Order this document by 2N5400/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N 5401* PNP Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Symbol 2N5400 2N5401 Unit C o lle c to r-E m itte r V oltag e Rating VCEO 120 150 V dc C o lle c to r-B a s e V oltag e


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    PDF 2N5400/D 2N5400 2N5401 N5400 2N5401 O-226AA) 1N914 2N5400 MOTOROLA

    Untitled

    Abstract: No abstract text available
    Text: 4SE D • *10^7250 G G 1 7 7 b cl 3 ■ T0S 4 TOSHIBA TRANSISTOR_ SILICON PNP EPITAXIAL TYPE PCT PROCESS TOSHIBA 2N5400 (DISCRETE/OPTO) FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown : VCBO=-130V,


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    PDF 2N5400 -130V, -120V -100V -50mA, -250yA

    2n3904 2n3906

    Abstract: 2SC1815 2SA1015 2SC1815 2SA1015
    Text: SIGNAL TRANSISTORS SM ALL SIGNAL TRANSISTOR Type No. TO-92 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2N5401 2N5550 2N5551 MPS2222 MPS2222A MPS2907 MPS2907A MPSA05 MPSA06 MPSA13 MPSA14 MPSA42 MPSA43 MPSA55 MPSA56 MPSA62 MPSA63 MPSA64


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    PDF 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2n3904 2n3906 2SC1815 2SA1015 2SC1815 2SA1015