2N4125 Search Results

2N4126

Abstract: 2N41 2N4125 transistor 2N4125 2n4125 transistor Tj150
Contextual Info: 2N4125/4126 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: TO-92 = 2N41 25: 3 0 V 2N4126: 25V * Collector Dissipation: Pc m ax =625mW V ceo ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic C ollector-B ase Voltage :2 N 4 1 2 5

2n4125

Abstract: 2n4126
Contextual Info: 2N4125 2N4126 M A XIM U M RATINGS Symbol 2N4125 2N4126 Unit Collector-Emitter Voltage VCEO 30 25 Vdc Collector-Base Voltage VCBO 30 Emitter-Base Voltage vebo 4.0 Vdc Collector Current - Continuous 'c 200 mAdc Total Device Dissipation «'• Derate above 25°C

2n4125 equivalent

Abstract: 2N4125 transistor 2N4125 3906 TO-92
Contextual Info: 2N4125 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents of 10 µA to 100 mA. Sourced from Process 66. See 3906 for characteristics. Absolute Maximum Ratings* Symbol

Contextual Info: Small Signal Low Noise Transistors Part No. BC238 BC239 2N4124 2N5089 MPS6521 2N4123 2N5088 MPSA18 2N5210 2N5961 2N4410 BC308 BC309 2N4126 MPS6523 2N4125 PN4248 PN4250 2N5086 2N5087 20070515 Polarity NPN PNP V (A) hFE @ VCE & IC NF Max. Condition IC VCE

transistor 2N4125

Abstract: 2N4125 MOTOROLA 2N4125 2n4125 equivalent ku 602 vc transistor2N4125
Contextual Info: MOTOROLA Order this document by 2N4125/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor 2N4125 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 30 Vdc Collector – Base Voltage VCBO

2n3904 2n3906

Abstract: 2SC1815 2SA1015 2SC1815 2SA1015
Contextual Info: SIGNAL TRANSISTORS SM ALL SIGNAL TRANSISTOR Type No. TO-92 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2N5401 2N5550 2N5551 MPS2222 MPS2222A MPS2907 MPS2907A MPSA05 MPSA06 MPSA13 MPSA14 MPSA42 MPSA43 MPSA55 MPSA56 MPSA62 MPSA63 MPSA64

2N4125

Contextual Info: 2N4125 Amplifier Transistor. Collector-emitter Voltage: Vceo = -30V. C. 1 of 1 Home Part Number: 2N4125 Online Store 2N4125 Diodes Am plifier Transis t o r. C o llec t o r- em it ter Vo ltage: Vc eo = - 3 0 V.

LC 300-S

Abstract: 2N41 2N4125
Contextual Info: Transistors 2N4125 USHA INDIA LTD AMPLIFIER TRANSISTOR * Collector-Emitter Voltage: Vceo = 2N41 25: 30V TO-92 * Collector Dissipation: Pc (max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit Collector-Base Voltage VcbO -3 0 V

2N3906

Abstract: 2N4125
Contextual Info: SA MS UN G SEM IC ONDUCTOR INC ; 2N4125 IME O | 7 ^ 4 1 4 2 0Q0?lb7 S PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: Veso =30 V * Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (T8=25°C)

2N4125

Contextual Info: 2N4125 2N4125 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents of 10 µA to 100 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

Contextual Info: 4SE D • =10=17 250 001775b IT O S H S TO S H IB A TR A N S IS TO R 2N4125 SILICO N P N P E P IT A X IA L T Y P E PC T P R O C ES S TOSHIBA (DISCRETE/OPTO) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. . Low Leakage Current * I C B O = - 5 0 n A ( M a x .)

Contextual Info: 2N4125 2N4125 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents of 10 µA to 100 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

2n4125 transistor

Abstract: 2N4125
Contextual Info: TOSHIBA 2N4125 Transistor Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - Iqbo ~ -50nA Max. @ Vqb _ -20V - l(£go ~ -50nA (Max.) @ V^g = -3V • Low Saturation Voltage - VCE(sat) = -0.4V (Max.) @ lc = -50mA, lB = -5mA

2N4126

Abstract: 2N4125 2N4125 NPN 2N4123 2N4124 UBB013
Contextual Info: 2N4125 2N4126 PHILIPS INTERNATIONAL SbE J> 711005b 0042bLj4 Ö02 M P H I N T-2^-/7 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in plastic TO -92 envelopes, prim arily intended fo r low-power, small-signal audio­ frequency applications for consumer service.

BC213K

Abstract: LOW-POWER SILICON PNP 2SA102 250m40 BC388
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 25 30 2SA495 BC388 BFW31 TMPT4125 YTS4125 A5T4125 FMMT4125 MMBT4125 MMBT4125 MMBT4125 4 2N4125 2SA594 2SA594 2SA594 2SA732 TEC8012D TEC8012D 2SA1182 BC213K >= Manufacturer See Index See Index

2N4125

Abstract: 2N4126 2n4125 transistor
Contextual Info: 2N4125/4126 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: V c e o *= 2N4125:3 0 V 2N4126:25V • Collector Dissipation: Pc max «625mW ABSOLUTE MAXIMUM RATINGS (TA=25t:) Characteristic Collector-Base Voltage Collector-Emitter Voltage

2N4125

Abstract: 2n4125 equivalent CBVK741B019 F63TNR PN2222N transistor 2N4125
Contextual Info: 2N4125 2N4125 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents of 10 µA to 100 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

2N4125

Abstract: 2N4126 2N4125 MOTOROLA 2n4125 equivalent DSA006741
Contextual Info: MOTOROLA Order this document by 2N4125/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N4125 2N4126 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4125 2N4126 Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage

2n4125 fairchild

Abstract: st 2n 3906
Contextual Info: S E M IC O N D U C T O R 2N4125 PNP General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents of 10 |^A to 100 mA. Sourced from Process 66. See 3906 for characteristics. Absolute Maximum RâtinÇjS

2N5219

Abstract: 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE V C E sa t E b v CEO Device T yp e @ 1 0 m A -(V ) Min. M ax. @ l c (m A ) V c e (V ) NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150 2N4124 2N4125 2N4126 2N4400

A5T4125

Contextual Info: TYPES 2N4125, 2N4126, A5T4125, A5T4126 P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L - S 731 1 4 7 2 , J U L Y 1 9 7 1 - R E V lS E D M A R C H 1973 S IL E C T t T R A N S IS T O R S Î FOR G E N E R A L PURPOSE SA TU R A TED -SW ITC H IN G A N D A M P L IF IE R APPLIC A TIO N S

Contextual Info: 4 TOSHIBA TRANSISTOR 2N4125 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. . Low Leakage Current : ICBO=_50nA(Max.) @ V c b =-20V lEBO=-50nA(Max.) @ V e B=-3V . Low Saturation Voltage : ^ C E ( s a t ) = ~ 0 .

2n4125 equivalent

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor 2N4125 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 30 Vdc Collector – Base Voltage VCBO 30 Vdc Emitter – Base Voltage

2n3905A

Abstract: 2N4125 2N4125 NPN
Contextual Info: G E SOLI» STATE □1 f ' ''' OIE‘“ "17927 3875081 G E SOLÏD'STATE D E | 3 Û 7 S D Û 1 0D17TS7 5 | D Signal Transistors 2N4123, 2N4124, 2N4125, 2N4126 T •2*5-'? BASE C U RR EN T lB - m A C O LLE C T O R C U R R E N T ( lc ) - m A 92CS-42777 Fig. 9 - Typicalbase-to-emittersaturation voltage characteristics for