2N3014 SPEED TRANSISTOR Search Results

2N3014 SPEED TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TK095A65Z5	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 650 V, 29 A, 0.095 Ω@10 V, High-speed diode, TO-220SIS
TK7R4A15Q5	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 150 V, 57 A, 0.0074 Ω@10 V, High-speed diode, TO-220SIS
TK095V65Z5	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 650 V, 28 A, 0.095 Ω@10 V, High-speed diode, DFN 8×8
TK9R7A15Q5	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 150 V, 49 A, 0.0097 Ω@10 V, High-speed diode, TO-220SIS
TK095E65Z5	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 650 V, 29 A, 0.095 Ω@10 V, High-speed diode, TO-220

2N3014 SPEED TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2N3014 speed transistor Abstract: 2N3014 2N3014 TO-18 Text: 2N3014 HIGH SPEED SATURATED SWITCHES DESCRIPTION The 2N3014 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case intended for high speed low saturation switching application up to 300 mA. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS	Original	2N3014 2N3014 2N3014 speed transistor 2N3014 TO-18	PDF
2N3009 Abstract: No abstract text available Text: eS&mi-dontLjLctoi ZPioauata., 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N3009 2N3013 2N3014 NPN SILICON HIGH SPEED SWITCHING TRANSISTORS 2N3009, 2N3013, 2N3014 types are Silicon NPN switching Transistors	Original	2N3009 2N3013 2N3014 2N3009, 2N3013, 2N3014 2N3009	PDF
2n5183 Abstract: BC187 Small Signal Transistors TO-18 Case Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF ICES ICEV	Original	2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A 2n5183 BC187 Small Signal Transistors TO-18 Case	PDF
switch NPN Abstract: BSY18 2N2369 2n4390 Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF ICES ICEV	Original	2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A switch NPN BSY18 2N2369 2n4390	PDF
2N3014 TO-18 Abstract: 2N2539 2N3829 2n4014 datasheet BC477 2N718A BSV68 30-40-500 BC187 BC477 equivalent Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF ICES ICEV	Original	2N703 2N706C 2N708 2N709A BSY62 BSY79 BSY95A MM4257 MM4258 23-February 2N3014 TO-18 2N2539 2N3829 2n4014 datasheet BC477 2N718A BSV68 30-40-500 BC187 BC477 equivalent	PDF
LM3661TL-1.40 Abstract: BSX20 2N719A Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF ICES ICEV	Original	2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A LM3661TL-1.40 BSX20	PDF
transistor 2N3563 Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor Text: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .	Original		PDF
3009 Abstract: 2n3013 2N3014 2n3009 Text: 2N 3009 2N 3013 2N3014 SILICON PLANAR NPN HIGH-SPEED SATURATED SWITCHES The 2N 3009, 2N 3013 and 2N 3014 are silicon planar epitaxial NPN transistors in Jedec T O -1 8 metal case, intended fo r high-speed, lo w -saturation switching application up to 300 mA.	OCR Scan	2N3014 20CfmÃ 3009 2n3013 2N3014 2n3009	PDF
Fairchild, 2N3019 Abstract: 2N3906 NPN Fairchild DN2222A transistor 2N2359A fairchild 2n3019 2n2222a fairchild DN3904 2N2907 NPN Transistor 2n3904 npn fairchild 2N3904 NPN Transistor Text: FAIRCHILD TRANSISTORS SMALL SIGNAL NPN AND PNP TRANSISTOR DICE BY APPLICATION Item DEVICE NO. Basic VcEO 'CBO @ VcB hFE @ ic V V Standard nA mA Pol. Device Min Max Min/Max 1 DN2484 NPN 2N2484 60 20 45 250/100/450 2 DN3962 PNP 2N3962 60 20 50 3 DN918 NPN	OCR Scan	DN2484 2N2484 DN3962 2N3962 11x24 DN918 2N918 DN3904 2N3904 11x18 Fairchild, 2N3019 2N3906 NPN Fairchild DN2222A transistor 2N2359A fairchild 2n3019 2n2222a fairchild 2N2907 NPN Transistor 2n3904 npn fairchild 2N3904 NPN Transistor	PDF
2N3009 Abstract: 2N3013 2N3014 LB-23 Text: Data Sheet 2N3009 2N3013 2N301A Central Sem iconductor Corp. NPN SILICON HIGH SPEED SWITCHING TRANSISTORS 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors JEDEC T0-18 CASE	OCR Scan	2N3009 2N3013 2N3014 T0-18 2N3009, 2N3013, 2N3014 2N3013 LB-23	PDF
2N4275 Abstract: 2N3640 2N4209 2N3646 fairchild 2N3639 fairchild to-106 2N4258A 2N5134 2n3646 2N3640 FAIRCHILD Text: FAIRCHILD TRANSISTORS SMALL SIGNAL HIGH SPEED SWITCHING TRANSISTORS BY ASCENDING V q eo (FOR MEDIUM SPEED—SEE GENERAL PURPOSE SECTION) Item DEVI CE NO. Po larity NPN PNP C b VCEO s @ ic hFE @ >C VCE (sat) Pd T ta tc (VCER) (‘ off) @ ic V ns mA mA	OCR Scan	2NS228 to-92 2N3639 to-106 2N5134 2N4274 2N5224 2N4275 2N3640 2N4209 2N3646 fairchild fairchild to-106 2N4258A 2N5134 2n3646 2N3640 FAIRCHILD	PDF
2N3304 Abstract: 2N4274 2N5055 2n5141 2N5456 MPSL08 2N5455 Text: TRANSISTORS—SMALL SIGNAL PNP HIGH SPEED SATURATED SWITCHING TRANSISTORS BY ASCENDING V CEQ METAL PACKAGE TYPE =r Tl m (FOR MEDIUM SPEED — SEE GENERAL PURPOSE SECTION) V CEO *S <V CER ) (to ff) VOLTS ns @ 1c M A X mA MIN hp E @ •c M IN - M A X h V CE(sat)	OCR Scan	2N4207 2N3304 2N4208 2N2894A 2N3546 2N3012 2N2369A 2N709 2N914 2N2369A0 2N4274 2N5055 2n5141 2N5456 MPSL08 2N5455	PDF
2N5057 Abstract: JAN2N706A 2n5456 Text: TRANSISTORS—SMALL SIGNAL NPN HIGH SPEED SATURATED SWITCHING TRANSISTORS BY ASCENDING VcEO METAL PACKAGE (toff ) ns @ IQ 2N834 M AX mA @ *C MIN - M A X mA TC 25°C MHz pF Ta 25°C mA MIN M AX mW W Package Complement 0.25 @ 10 350 4.0 300 1.0 TO-18 2N2894A	OCR Scan	2N834 2N709 FT709 2N3010 2N709A 2N2475 2N3647 2N3510 2N3011 2N743 2N5057 JAN2N706A 2n5456	PDF
2N2222 npn small signal current gain Abstract: 2N5828 GET706 2N6000 beta 2N2222 2N3013 2N6006 GET2904 2N6002 GET3014 Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A	OCR Scan	50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2222 npn small signal current gain 2N5828 2N6000 beta 2N2222 2N3013 2N6006 GET2904 2N6002 GET3014	PDF

2N5828 Abstract: 2N3854A 2N6000 2N3638 2N6006 2N6002 GET3013 GET3014 2N6004 GET3646 Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A	OCR Scan	50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N5828 2N3854A 2N6000 2N3638 2N6006 2N6002 GET3014 2N6004	PDF
7B222 Abstract: 4003 ttl 4003 entire 2N3014 2N3629 SN74154 TIV305 2N3829 Text: MOS LSI TMS 4003 JR, TMS 4003 NC 256-BIT RANDOM-ACCESS MEMORY FOR MEMORY APPLICATIO N S REQ UIRIN G HIGH-SPEED READ/W RITE C A P A B ILIT Y • Nondestructive readout • Static operation • System access time under 200 ns • Low power dissipation d«scription	OCR Scan	256-BIT 2N3629 2N3014 135G144A 2N3829 7S222 7B222 4003 ttl 4003 entire SN74154 TIV305	PDF
Untitled Abstract: No abstract text available Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO bvebo h FE ICBO @ VCBO V (V) (V) (\|iA) MIN MIN MIN MAX ICES "ICEV @ic (itlA) (V) NF ton toff (PF) (MHZ) (dB) (ns) (ns) @ VCE VCE(SA T) @ IC Cob (V) MIN MAX 00 (ItlA) MAX MAX it MIN MAX MAX MAX	OCR Scan	2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A	PDF
Untitled Abstract: No abstract text available Text: MOS LSI TMS 4003 JR. TMS 4003 NC 258-BIT RANDOM-ACCESS MEMORY 09 x FOR MEMORY APPLICATIONS REQUIRING HIGH-SPEED READ/W RITE C AP A BILITY c > 3 < • Nondestructive readout • Static operation • System access time under 200 ns • Low power dissipation	OCR Scan	258-BIT 2N3C14 135G144A 2N3014 2N3829	PDF
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan		PDF
2N3800 Abstract: germanium diode germanium tu 38 e 2n4051 motorola 2N4280 2N3980 1N3492 MC710F 2N4276 2n3817 Text: DATA BDI S U P P L E M E NT This is the second supplement to the 2nd Edition of the Semiconductor Data Book originally published in August 1966. It is produced to keep an up-to-date listing of the most advanced semiconductor products. D evices characterized in this supplement include only the type numbers in tro	OCR Scan	29B52595F13 52595F09 2N3800 germanium diode germanium tu 38 e 2n4051 motorola 2N4280 2N3980 1N3492 MC710F 2N4276 2n3817	PDF
BSX19 equivalent Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868 Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small	OCR Scan	OT-23 BSX19 equivalent BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868	PDF
BF195 equivalent Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416 Text: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products	OCR Scan		PDF
MT1115 Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117 Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir	OCR Scan	108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117	PDF
KE4416 Abstract: ST5025 SE5055 CS9013 N3055 transistor bf 175 2N6375 Text: DH3467C Quad PNP Core Driver DESCRIPTION CONNECTION DIAGRAM The DH3467C consists of four 2N3467 type PNP transistors mounted in a 14-pin molded dual-in-line package. The device is primarily intended fo r core memory application requiring operating currents	OCR Scan	DH3467C 2N3467 14-pin O-106 O-220 KE4416 ST5025 SE5055 CS9013 N3055 transistor bf 175 2N6375	PDF

2N3014 SPEED TRANSISTOR Search Results

2N3014 SPEED TRANSISTOR Result Highlights (5)

2N3014 SPEED TRANSISTOR Datasheets Context Search

2N3014 speed transistor

2N3009

2n5183

switch NPN

2N3014 TO-18

LM3661TL-1.40

transistor 2N3563

3009

Fairchild, 2N3019

2N3009

2N4275

2N3304

2N5057

2N2222 npn small signal current gain

2N5828

7B222

Untitled

Untitled

sx3704

2N3800

BSX19 equivalent

BF195 equivalent

MT1115

KE4416