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    2N3467 Price and Stock

    Microchip Technology Inc JANTX2N3467

    TRANS PNP 40V 1A TO39
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    Microchip Technology Inc 2N3467

    TRANS PNP 40V 1A TO39
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    Microchip Technology Inc 2N3467L

    TRANS PNP 40V 1A TO5AA
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    Central Semiconductor Corp 2N3467-PBFREE

    TRANS PNP 40V 1A TO39
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    Microchip Technology Inc JAN2N3467

    Power BJT _ TO-39, Projected EOL: 2049-02-05
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    Microchip Technology Inc JAN2N3467 219 22 Weeks
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    2N3467 Datasheets (59)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3467 Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 40V 1A TO-39 Original PDF
    2N3467 Central Semiconductor Small Signal Transistor PNP- Saturated Switch Transistor Chip Original PDF
    2N3467 Microsemi PNP Silicon Switching Transistor Original PDF
    2N3467 Motorola Switching Transistor PNP Silicon - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=1 / Hfe=40-125 / fT(Hz)=175M / Pwr(W)=1 Original PDF
    2N3467 Semelab Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=1 / Hfe=40-125 / fT(Hz)=175M / Pwr(W)=1 Original PDF
    2N3467 Semico Type 2N3467 Geometry 6706 Polarity PNP - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=1 / Hfe=40-125 / fT(Hz)=175M / Pwr(W)=1 Original PDF
    2N3467 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N3467 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N3467 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N3467 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    2N3467 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3467 Motorola European Master Selection Guide 1986 Scan PDF
    2N3467 Motorola Power Transistor Selection Guide Scan PDF
    2N3467 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3467 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3467 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3467 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3467 Unknown Transistor Replacements Scan PDF
    2N3467 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N3467 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    2N3467 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3467

    Abstract: IC CHIP 348 6706
    Text: Data Sheet No. 2N3467 Generic Part Number: 2N3467 Type 2N3467 Geometry 6706 Polarity PNP Qual Level: JAN - JANTXV REF: MIL-PRF-19500/348 Features: • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-39 case. Also available in chip form using


    Original     		PDF 2N3467 MIL-PRF-19500/348 MIL-PRF-19500/348 2N3467 IC CHIP 348 6706

    2N3025

    Abstract: 2N3026 2N3021 2N3022 2N3023 2N3024
    Text: SOLID STATE DEVICES, INC PNP POWER & HIGH VOLTAGE Device Type 2N2983 2N2984 2N2985 2N2986 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3250 2N3250A 2N3251 2N3251A 2N3467 2N3468 2N3485 2N3485A 2N3486 2N3486A 2N3634 2N3635 2N3636 2N3637 2N3660 2N3661 2N3719 2N3720


    Original     		PDF 2N3779 2N3780 2N3781 2N3789 2N3790 2N3791 2N3025 2N3026 2N3021 2N3022 2N3023 2N3024

    2N3468

    Abstract: 2N3467 PNP transistor 500ma 30v
    Text: DATA SHEET 2N3467 2N3468 PNP SILICON TRANSISTOR JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3467, 2N3468 types are Silicon PNP Switching Transistors designed for core driver applications MAXIMUM RATINGS TA=25°C Collector-Base Voltage Collector-Emitter Voltage


    Original     		PDF 2N3467 2N3468 2N3467, 2N3468 M500mA, 500mA, 2N3467 PNP transistor 500ma 30v

    Untitled

    Abstract: No abstract text available
    Text: 2N3467L+JANTXV Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).6 @I(C) (A) (Test Condition)500m


    Original     		PDF 2N3467L Freq175M time30n

    Untitled

    Abstract: No abstract text available
    Text: 2N3467+JAN Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)1.0


    Original     		PDF 2N3467 Freq175M time30n

    2N3467 MOTOROLA

    Abstract: 2N3467
    Text: MOTOROLA Order this document by 2N3467/D SEMICONDUCTOR TECHNICAL DATA Switching Transistor LAST SHIP 21/03/00 2N3467 PNP Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 3 Rating Symbol Value Unit Emitter–Collector Voltage VCEO – 40 Vdc Collector – Base Voltage


    Original     		PDF 2N3467/D 2N3467 2N3467/D* 2N3467 MOTOROLA 2N3467

    2N3467

    Abstract: 2N3467L 2N3468 2N3468L
    Text: TECHNICAL DATA PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/348 Devices Qualified Level 2N3467 2N3467L JAN JANTX JANTXV 2N3468 2N3468L MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current


    Original     		PDF MIL-PRF-19500/348 2N3467 2N3467L 2N3468 2N3468L O-205AD) 2N3467 2N3467L 2N3468 2N3468L

    Untitled

    Abstract: No abstract text available
    Text: 2N3467 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N3467 O205AD) 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N3467 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N3467 O205AD) 17-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: High Speed Metal Can Transistors VCEO Part No. Polarity 2N2369 2N2369A NPN 2N708 2N3467 20070515 PNP sust Min. (V) toff @ Ic ton Max. Max. Ic Bipolar Transistors hFE @ IC VCE(sat) @ IC & IB Max. IC PD fT Package @ Min. IB 25°C (mA) (MHz) (mW) Bulk (ns)


    Original     		PDF 2N708 2N3467 2N2369 2N2369A

    2n3467

    Abstract: No abstract text available
    Text: 2N3467 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N3467 Availability Online Store


    Original     		PDF 2N3467 2N3467 STV3208 LM3909N LM3909

    Untitled

    Abstract: No abstract text available
    Text: 2N3467L+JAN Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).6 @I(C) (A) (Test Condition)500m


    Original     		PDF 2N3467L Freq175M time30n

    Untitled

    Abstract: No abstract text available
    Text: 2N3467L+JANTX Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).6 @I(C) (A) (Test Condition)500m


    Original     		PDF 2N3467L Freq175M time30n

    2N3467

    Abstract: 2m324
    Text: TYPES « i r i 2N3467, 2N3468 P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 0 5 7 6 , M A Y 1 9 6 8 - flE V IS E D M A R C H 1973 DESIGNED FOR HIGH-SPEED CORE-DRIVER APPLICATIONS • High Dissipation Capability. . . 10 Watts at 25°C Case Temperature


    OCR Scan     		PDF 2N3467, 2N3468 2N324S, 2N3468) 2N3467 2m324

    MPQ3467

    Abstract: 2N3467 TN3467 xl semi
    Text: 2N3467/TN3467/MPQ3467 NATL SEMI CONO 5 3 1 Jl A D I S C RE TE HE D g National . Semiconductor 2 N 3 4 6 7 TL/G/10100-11 S | -r-37- 15 M P Q 3 4 6 7 TL/Q/10100-7 ////// Ey i Bc GOBVEELi * T N 3 4 6 7 u u hSQLlBD TL/G/10100-8 P N P S w itc h in g T r a n s is to r


    OCR Scan     		PDF T-31-15 2N3467 TN3467 MPQ3467 TUG/10100-11 O-237 TL/G/10100-7 TL/G/10100-8 MPQ3467 2N3467 TN3467 xl semi

    2N3467

    Abstract: No abstract text available
    Text: T im es ? 2N3467 JAN,JANTX JANTXV SILICON SMALL-SIGNAL PNP TRANSISTORS PNP SWITCHING TRANSISTOR FAST SWITCHING HIGH FREQUENCY HIGH CURRENT GAIN TO-39 TO-205AD M A X IM U M R A T IN G S R A T IN G S Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage


    OCR Scan     		PDF O-205AD 2N3467 864TY 2N3467

    2N1132A

    Abstract: 2N3495 2N5415 2n1132a transistor 2N3494 2N2800 2N4033 2N2904 2N2905 2N3467
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PN P TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637 2N3743


    OCR Scan     		PDF O-5/TO205AD/TO-39 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3495 2n1132a transistor 2N3494 2N4033 2N3467

    Untitled

    Abstract: No abstract text available
    Text: p semcofl ¿888888888 |M iwiHBBffi m sssBP .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. ><>niftBHhr 1 1 I I ^88888 % # 1 D a ta S h e e t No. 2 N 3 4 6 7 $ idL SEMICONDUCTORS G eneric Part Num ber: 2N3467 Type 2N3467 G eom etry 6706 Polarity PNP Qual Level: JAN - JA NTXV


    OCR Scan     		PDF 2N3467 MiL-PRF-19500/348

    2N4033

    Abstract: 2N3494 2N5415
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 V cE O Ic PACKAGE DEVICE TYPE sus VOLTS (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637


    OCR Scan     		PDF O-5/TO205AD/TO-39 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N4033 2N3494

    2N3467

    Abstract: 2N3467 MOTOROLA
    Text: 2N3467* 2N3468* M A XIM U M RATINGS Symbol 2N3467 2N3468 Unit Emitter-Collector Voltage VCEO -4 0 -5 0 Vdc Collector-Base Voltage VCBO -4 0 -5 0 Vdc Emitter-Base Voltage vebo -5 .0 Vdc Collector Current — Continuous ic -1 .0 Ade Total Device Dissipation @ Ta = 25°C


    OCR Scan     		PDF 2N3467* 2N3468* 2N3467 2N3468 O-205AD) Juncti30 2N3467 2N3468 L3b7254 2N3467 MOTOROLA

    2N3467 MOTOROLA

    Abstract: 2N3467 2n3468
    Text: 2N3467* 2N3468* MAXIMUM RATINGS Symbol 2N3467 2N3468 U nit Emitter-Collector Voltage v CEO -4 0 -5 0 Vdc Collector-Base Voltage v CBO -4 0 Emitter-Base Voltage Ve b o Rating -5 0 - 5 .0 Vdc Vdc Ade Collector Current — Continuous 'C Total Device Dissipation « Ta - 25°C


    OCR Scan     		PDF 2N3467 2N3468 2N3467* 2N3468* O-205AD) 2N3468 2N3467 2N3467 MOTOROLA

    2N3467

    Abstract: No abstract text available
    Text: 2N3467/TN3467/MPQ3467 ZWÄNational Juâ Semiconductor 2N3467 ^ TN3467 T L /G /1 0 1 0 0 -1 1 ^ ji 1 “ // MPQ3467 37 T L /G /1 0 1 0 0 -7 Bc T L /G /1 0 1 0 0 -8 PNP Switching Transistor Electrical Characteristics Symbol t a = 25°c unless otherwise noted


    OCR Scan     		PDF 2N3467/TN3467/MPQ3467 2N3467 TN3467 MPQ3467 2N3467

    2N3467

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA 2N3467, 2N3468 o/' < PNP Silicon Small-Signal Transistors cr ystalo n cs 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 1 1 779 . designed for general-purpose switching applications. MAXIM UM R ATIN G S Symbol 2N3467 2N3468 Unit


    OCR Scan     		PDF 2N3467, 2N3468 2N3467 2N3468

    2N3820

    Abstract: No abstract text available
    Text: riOTOROLA SC -CDIODES/OPT0 } Type Number Page Number Page Number D-S D-S S-G Power 2N3743 3-105 3-107 3-107 3-100 3-109 3-109 3-111 3-111 2N3439 2N3440 2N3444S 2N3467 2N3468 2N34B5A 2N3486A 2-6 2-7 2-7 THYRISTORS 2-7 3-105 2N4199 through 2N4206 2-5 3-120 TRANSISTORS


    OCR Scan     		PDF 2N3743 2N3439 2N3440 2N3444S 2N3467 2N3468 2N34B5A 2N3486A 2N3715 2N3716 2N3820