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    2N3250A Price and Stock

    Microchip Technology Inc 2N3250A

    TRANS PNP 60V 0.2A TO39
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    Microchip Technology Inc 2N3250AUB

    SMALL-SIGNAL BJT
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    Microchip Technology Inc JAN2N3250A

    TRANS PNP 60V 0.2A TO39
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    Microchip Technology Inc 2N3250AUB-TR

    SMALL-SIGNAL BJT
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    Microchip Technology Inc JANTX2N3250A

    TRANS PNP 60V 0.2A TO39
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    2N3250A Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3250A Microsemi PNP Silicon Switching Transistor Original PDF
    2N3250A Semelab Bipolar PNP Device in a Hermetically Sealed TO18 Metal Package - Pol=PNP / Pkg=TO18 / Vceo=60 / Ic=0.2 / Hfe=50min / fT(Hz)=250M / Pwr(W)=0.36 Original PDF
    2N3250A Central Semiconductor PNP METAL CAN Transistors Scan PDF
    2N3250A Central Semiconductor PNP Metal Can Transistors - Saturated Switch / Low Level Amplifier Scan PDF
    2N3250A Central Semiconductor BJT, PNP, Small Signal Transistor, IC 0.2A - Pol=PNP / Pkg=TO18 / Vceo=60 / Ic=0.2 / Hfe=50min / fT(Hz)=250M / Pwr(W)=0.36 Scan PDF
    2N3250A Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N3250A Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N3250A Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N3250A General Diode Transistor Selection Guide Scan PDF
    2N3250A Micro Electronics Semiconductor Devices Scan PDF
    2N3250A Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3250A Motorola Power Transistor Selection Guide Scan PDF
    2N3250A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3250A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3250A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3250A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3250A Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3250A Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N3250A Unknown Vintage Transistor Datasheets Scan PDF
    2N3250A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    2N3250A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    250M

    Abstract: 2N3250A
    Text: 2N3250A Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products


    Original
    PDF 2N3250A O206AA) 2-Aug-02 250M 2N3250A

    2N3025

    Abstract: 2N3026 2N3021 2N3022 2N3023 2N3024
    Text: SOLID STATE DEVICES, INC PNP POWER & HIGH VOLTAGE Device Type 2N2983 2N2984 2N2985 2N2986 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3250 2N3250A 2N3251 2N3251A 2N3467 2N3468 2N3485 2N3485A 2N3486 2N3486A 2N3634 2N3635 2N3636 2N3637 2N3660 2N3661 2N3719 2N3720


    Original
    PDF 2N3779 2N3780 2N3781 2N3789 2N3790 2N3791 2N3025 2N3026 2N3021 2N3022 2N3023 2N3024

    2N3251A

    Abstract: 2N3250A
    Text: TECHNICAL DATA 2N3250A JAN, JTX, JTXV 2N3251A JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/323 PNP SWITCHING SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current


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    PDF 2N3250A 2N3251A MIL-PRF-19500/323 2N3251A

    2n3251a

    Abstract: No abstract text available
    Text: 2N3250 2N3251 2N3250A 2N3251A SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3250, 2N3251 series devices are silicon PNP transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER


    Original
    PDF 2N3250 2N3251 2N3250A 2N3251A 2N3250, 2n3251a

    Untitled

    Abstract: No abstract text available
    Text: 2N3250A+JANTXV Transistors Si PNP LP HF BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20nØ÷ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50


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    PDF 2N3250A Freq250M

    Untitled

    Abstract: No abstract text available
    Text: 2N3250A+JANTX Transistors Si PNP LP HF BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20nØ÷ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50


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    PDF 2N3250A Freq250M

    Untitled

    Abstract: No abstract text available
    Text: 2N3250A+JAN Transistors Si PNP LP HF BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20nØ÷ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50 h(FE) Max. Current gain.150


    Original
    PDF 2N3250A Freq250M

    2N3251A

    Abstract: 2N3250A
    Text: TECHNICAL DATA PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/323 Devices Qualified Level 2N3250A JAN JANTX JANTXV 2N3251A MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C 1


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    PDF MIL-PRF-19500/323 2N3250A 2N3251A O-205AD) 2N3251A 2N3250A

    2N3251A

    Abstract: 2N3250A 2N3251AUB
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/323 DEVICES LEVELS 2N3250A 2N3250AUB 2N3251A 2N3251AUB


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    PDF MIL-PRF-19500/323 2N3250A 2N3250AUB 2N3251A 2N3251AUB 10Vdc, 10mAdc, 20Vdc, 2N3251A 2N3250A 2N3251AUB

    Untitled

    Abstract: No abstract text available
    Text: 2N3250A Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products


    Original
    PDF 2N3250A O206AA) 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N3250A Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products


    Original
    PDF 2N3250A O206AA) 16-Jul-02

    1N6762

    Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
    Text: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index


    Original
    PDF MIL-PRF-19500 2N720A 2N1131 2N1132 2N1893 JANHC2N2222A JANKC2N2222A JANH3057A 2N3250A 2N3251A 1N6762 JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB

    switch NPN

    Abstract: BSY18 2N2369 2n4390
    Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV


    Original
    PDF 2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A switch NPN BSY18 2N2369 2n4390

    2N3261

    Abstract: 2N3261A 2N3251A 2n3250A 2n3251
    Text: 2N3250, A 2N3251, A MAXIMUM RATINGS Sym bol Rating Collector-Emltter Voltage 2N32E0 2N3250A 2N3251 2N3251A V C EO 40 Collector-Base Voltage V cB O 50 Emlt1er»Bass Voltage vebo Vdc 60 Vdc 5.0 Vdc Collector Current ic 200 m Adc Total Device Dissipation @ T^ = 25°C


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    PDF 2N3250, 2N3251, 2N32E0 2N3250A 2N3251 2N3251A 2N3261A O-206AA) 2N3250. 2N3261

    2N3304

    Abstract: 222Z 2N328A
    Text: ENTRAL SEMICONDUCTOR □□□□SSI S r bl D PIMP METAL CAN - SATURATED SWITCH Cont'd. Vcb VCE V eb hFE at •c VCE V V V min ma mA V 2N3250 2N3250A2N3251A 2N3304 2N3545 50 60 60 6 20 40 60 60 6 20 5 5 5 4 5 50 50 100 30 40 150 160 300 120 120 10 10


    OCR Scan
    PDF 222ZZ ZZZ22 CBR30 0000S23 O-105 O-106 2N3304 222Z 2N328A

    TO-18 amps pnp transistor

    Abstract: sot 23 2n2907 pnp transistor 2N0328 HS4208 M95FA-03-STD/M95FAR02A06
    Text: Microsemi PNP Transistors Part Number Microsemi Division 2N0329A JAN2N5795 JAN2N5796 JANTX2N5795 JANTX2N5796 JANTXV2N5795 JANTXV2N5796 MMBT3906 MMBT4403 MMBT2907A HS4208 HS3013 2N3250A 2N3251A 2N3250A JAN2N3251A 2N3250A JANTX2N3251A JANTXV2N3250 JANTXV2N3251


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    PDF OT-23 TO-18 amps pnp transistor sot 23 2n2907 pnp transistor 2N0328 HS4208 M95FA-03-STD/M95FAR02A06

    Untitled

    Abstract: No abstract text available
    Text: TYPES 2N3250, 2N3250A, 2N3251. 2N3251A P-N-P SILICON TRANSISTORS B U LL E T IN N O . D L -S 6 7 9 6 5 0 , M A R C H 1967 DESIGNED FOR LOW-POWER SATURATED-SWITCHING AND AMPLIFIER APPLICATIONS • Low-Level hFE: 80 Min at 100 /¿A 2N3251 and 2N3251A ‘ m echanical d a ta


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    PDF 2N3250, 2N3250A, 2N3251. 2N3251A 2N3251 2N3251A) 2N3250 2N3251

    Untitled

    Abstract: No abstract text available
    Text: M axim um Ratings Type NPN Pd Am bient mW V cb Volts 2N3250 360 2N3250A VCE Electrical Characteristics @ 25°C V C E Sat @ l c / l B H re @ Ic Volts V eb Volts M in /M ax mA 50 40 5 50/150 360 60 60 5 2N3251 360 50 40 2N3251A 360 60 2N3299 800 2N3300 ft


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    PDF 2N3250 2N3250A 2N3251 2N3251A 2N3299 2N3300 2N3301 2N3302 2N3326 2N3485

    2N328A

    Abstract: No abstract text available
    Text: ENTRAL bl SEMICONDUCTOR □□□□SSI D S r T -3 7 -a i PIMP M ETA L CAN - S A TU R A TED SWITCH Cont'd. TYPE Vc b VCE V eb hFE at •c VCE NO. V V V min ma mA V 2N3250 2N3250A ' 2N3251A 2N3304 2N3545 50 60 60 6 20 40 60 60 6 20 5 5 5 4 5 50 50 100 30


    OCR Scan
    PDF 222ZZ ZZZ22 CBR12 CBR30 0000S23 O-105 O-106 2N328A

    2N3251

    Abstract: transistor 2N3251 2N3250 2N3250A 2N3251A
    Text: Datasheet 2N3250 EflHffW 1 i i B v n n iI • _ ^ - - M 2N3250A 2N3251 2N3251A se m ico n d u cto r worp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 PNP SILICON TRANSISTOR JED EC TO-18 CASE Manufacturers of World Class Discrete Semiconductors


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    PDF 2N3250 2N3250A 2N3251 2N3251A 2N3250 2N3251 transistor 2N3251 2N3250A 2N3251A

    Untitled

    Abstract: No abstract text available
    Text: L.1 ENTRAL SEMICONDUCTOR D I ITflTibB □□□□SSI S PIMP METAL CAN - SATURATED SWITCH Cont'd. Vcb VCE V eb hFE at •c VCE >C fT C0b *on to ff V V V min ma mA V V mA MHz pF nS nS mA V 2N3250 2N3250A ' 2N3251A 2N3304 2N3545 50 60 60 6 20 40 60 60 6 20


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    PDF 2N3250 2N3250A 2N3251A 2N3304 2N3545 2N3576 2N4034 2N4035 2N4207 2N4208

    2n3250A

    Abstract: 2n3251a
    Text: SEMICONDUCTOR! TECHNICAL DATA 2N3250A 2N3251A CR YST ALOfJCS 2805 Vet«r»>s Highway Suite 14 Ronkorkorna, N Y. 1177t PNP Silicon Small-Signal Transistors . designed for general-purpose switching and amplifier applications MAXIMUM RATINGS Rating Unit Symbol


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    PDF 2N3250A 2N3251A 1177t 2N3251A

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    BT2222A

    Abstract: BT2222 2N2222 BT3501 BT51 2N2708 2N2944 2N2483 2N24B4 2N929
    Text: Discrete Devices Beam Lead Chips Transistor Chips 1 0 0 % Probed Parameters @ 2 5 ° C Partial List Function Polarity Similar Typ e BVCBO Volts E IA ly p e M in @ 10 n A BVCEO Volts M in @ 10 m A BVe b O V olts M in @ 1 0 u A Hf e @ Ic mA M in/M ax Mech.


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    PDF BT929 2N929 BT930 2N930 BT2483 2N2483 BT2484 2N24B4 BT2604 2N2604 BT2222A BT2222 2N2222 BT3501 BT51 2N2708 2N2944