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Susumu Co Ltd RG2012N-112-W-T1 RES SMD 1.1K OHM 0.05% 1/8W 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RG2012N-112-W-T1	Digi-Reel	1,485		1	1 $0.92 10 $0.651 100 $0.4437 1000 $0.32942 10000 $0.32942	Buy Now
	RG2012N-112-W-T1	Cut Tape	1,485		1	1 $0.92 10 $0.651 100 $0.4437 1000 $0.32942 10000 $0.32942	Buy Now
	RG2012N-112-W-T1	Reel	1,000		1,000	1 - 10 - 100 - 1000 $0.28875 10000 $0.28875	Buy Now
Mouser Electronics	RG2012N-112-W-T1		574			1 $0.98 10 $0.687 100 $0.461 1000 $0.299 10000 $0.299	Buy Now
Newark	RG2012N-112-W-T1	Reel			1,000	1 $0.423 10 $0.423 100 $0.423 1000 $0.423 10000 $0.382	Buy Now
Vicor Corporation VI-2N1-12 VI-2N1-12 48V/12V 150W SM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	VI-2N1-12	Bulk			1	1 $540.02 10 $540.02 100 $540.02 1000 $540.02 10000 $540.02	Buy Now
Avnet Americas	VI-2N1-12	Box		26 Weeks	1	1 $540.02 10 $428.96 100 $340.73334 1000 $340.73334 10000 $340.73334	Buy Now
Mouser Electronics	VI-2N1-12					1 $540.02 10 $428.96 100 $428.96 1000 $428.96 10000 $428.96	Get Quote
Rochester Electronics LLC 74ABT32N,112 IC GATE OR 4CH 2-INP 14DIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	74ABT32N,112	Tube			444	1 - 10 - 100 - 1000 $0.68 10000 $0.68	Buy Now
NXP Semiconductors 74ABT32N,112 IC GATE OR 4CH 2-INP 14DIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	74ABT32N,112	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	74ABT32N,112		1,773		1	1 $0.6501 10 $0.6501 100 $0.6111 1000 $0.5526 10000 $0.5526	Buy Now
NXP Semiconductors 74LV132N,112 IC GATE NAND 4CH 2-INP 14DIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	74LV132N,112	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	74LV132N,112		3,744		1	1 $0.52 10 $0.52 100 $0.4888 1000 $0.442 10000 $0.442	Buy Now

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2N112 Datasheets (105)

Part	Manufacturer	Description	Datasheet Type	PDF
2N112	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N112	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N112	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N112	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N112	Unknown	Vintage Transistor Datasheets	Scan	PDF
2N112	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N112	Unknown	GE Transistor Specifications	Scan	PDF
2N112	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N112	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N1120	Germanium Power Devices	Germanium Power Transistors	Scan	PDF
2N1120	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N1120	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N1120	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N1120	Unknown	Vintage Transistor Datasheets	Scan	PDF

2N1120	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N1120	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N1120	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N1120	Semitron	Germanium Power Transistors	Scan	PDF
2N1120	Solidev Semiconductors	Solid State Products (Transistor Guide)	Scan	PDF
2N1120JAN	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF

2N112 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
nkt270 Abstract: Low-Power Germanium PNP 2N2635 2G30 2N2209 TR104 tr320 2g603 2N426 2N801 Text: LOW-POWER GERMANIUM PNP Item Number . Part Number V BR CBO 5 10 2N413 2N413A 2N809 2N810 2N112 2N112A 2N1681 2N396A 2G396 2G396 ~~~~~ 15 20 -25 30 -35 40 2G303 2G303 2G303 2N801 2N802 2N426 2N1171 2N1017 NKT224 2G382 2G382 NKT221 NKT228 NKT303 2N623 TI385	Original	PDF	2N413 2N413A 2N809 2N810 2N112 2N112A 2N1681 2N396A 2G396 nkt270 Low-Power Germanium PNP 2N2635 2G30 2N2209 TR104 tr320 2g603 2N426 2N801
2N2614 Abstract: 2N1396 33 16U Low-Power Germanium PNP 2N384 2N295 2N2957 2N2956 ACY20 2G413 Text: LOW-POWER GERMANIUM PNP Item Number Part Number 5 • 10 2SA103 2N2797 2N2797 2N2797 MA891 MA891 2N1125 PTC102 NKT240 2G386 15 20 · 25 30 2N1395 2N1396 40005 2N1397 40006 2N59A NKT241 2N1699 ~~~~~9 2SA104 2Nl177 2G413 2G413 2G413 2G403 2N2614 NKT603F ACY30	Original	PDF	2SA103 2N2797 MA891 2N1125 PTC102 NKT240 2G386 2N2614 2N1396 33 16U Low-Power Germanium PNP 2N384 2N295 2N2957 2N2956 ACY20 2G413
Untitled Abstract: No abstract text available Text: 2N112A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)130m Maximum Operating Temp (øC)100õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.33 h(FE) Max. Current gain.	Original	PDF	2N112A
Untitled Abstract: No abstract text available Text: 2N1123 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40â V(BR)CBO (V)45 I(C) Max. (A)500m Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)25u @V(CBO) (V) (Test Condition)45 h(FE) Min. Current gain.40 h(FE) Max. Current gain.70Â	Original	PDF	2N1123
Untitled Abstract: No abstract text available Text: 2N1129 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25â V(BR)CBO (V)25 I(C) Max. (A)250m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)25u @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.100 h(FE) Max. Current gain.200	Original	PDF	2N1129 Freq750kÃ
2n1127 Abstract: No abstract text available Text: 2N1127 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)40â V(BR)CBO (V)40 I(C) Max. (A)250m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)85õ I(CBO) Max. (A)75u @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V).30 @I(C) (A) (Test Condition)500m	Original	PDF	2N1127
Untitled Abstract: No abstract text available Text: 2N1125 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40â V(BR)CBO (V)40 I(C) Max. (A)250m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)75u @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain. h(FE) Max. Current gain.	Original	PDF	2N1125
Untitled Abstract: No abstract text available Text: 2N1121 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V) I(C) Max. (A)20m Absolute Max. Power Diss. (W)65m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.34 h(FE) Max. Current gain.	Original	PDF	2N1121
Untitled Abstract: No abstract text available Text: 2N1128 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)18â V(BR)CBO (V)25 I(C) Max. (A)250m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)20u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain. h(FE) Max. Current gain.	Original	PDF	2N1128
2N1552 Abstract: Germanium power 2N1559a 2N1560 2N1555 Text: germanium. power transistors 150 T03/ See Pg. 147 for outline d PNP ALLOY TRANSISTORS 10.0 Amp BREAKDOWN VOLTAGES TYPE NUMBER V eB 2N677 2N677A 2N677B 2N677C 2N678 2N678A 2N678B 2N678C 2N1031 2N1031A 2N1031B 2N1031C 2N1032 2N1032A 2N1032B 2N1032C 2N1120	Original	PDF	2N677 2N677A 2N677B 2N677C 2N678 2N678A 2N678B 2N678C 2N1031 2N1031A 2N1552 Germanium power 2N1559a 2N1560 2N1555
Untitled Abstract: No abstract text available Text: 2N112 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)130m Maximum Operating Temp (øC)100õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.33 h(FE) Max. Current gain.	Original	PDF	2N112
Untitled Abstract: No abstract text available Text: 2N1126 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)35â V(BR)CBO (V)40 I(C) Max. (A)250m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)85õ I(CBO) Max. (A)75u @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)100m	Original	PDF	2N1126 Freq400kÂ
Untitled Abstract: No abstract text available Text: 2N1124 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35â V(BR)CBO (V)40 I(C) Max. (A)250m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)75u @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain. h(FE) Max. Current gain.	Original	PDF	2N1124 Freq400kÂ
DTG110B Abstract: TO36 package pnp germanium to36 TO41 package Germanium DTG-2400 DTG600 2N2081A TO41 DTG2400 Text: POWER GERMANIUM TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO Of) PD Max hFE fT ON) Min (Hz) r •CBO Max Max (A) (8) (CE)sat •Oper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .	Original	PDF	2N2082 2N2082A DTG2000 MP1550 2N1550A 2N1031 MP1554 MP1558 2N1032 2N3124 DTG110B TO36 package pnp germanium to36 TO41 package Germanium DTG-2400 DTG600 2N2081A TO41 DTG2400

2N1384 Abstract: 2N993 2N1516 2N1151 2N1378 2N1034 2N1036 2N1150 2N1037 2N1046 Text: D Ì G I T R O N E L E C T R O N I C CO RP 3bE D WM T W Ë DGE -p.'J 7 2flMHt.07 O G O O O D B Page MQITKON ELECTRONIC” CORP 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax JDHN J. S C H W A R T Z ENGINEERING DIGITRON ELECTRONICS, CORP	OCR Scan	PDF	2N974 2N1031A 2N1117 2N975 2N1032 2N1118 2N976 2N1034 2N1119 2N980 2N1384 2N993 2N1516 2N1151 2N1378 2N1036 2N1150 2N1037 2N1046
1N5438 Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175 Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi	OCR Scan	PDF	27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
AL102 ATES Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible	OCR Scan	PDF	Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
2n7588 Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149 Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.	OCR Scan	PDF
2N2048 Abstract: 2n2401 2N1499A 2N2170 2N2400 2N501 2N2168 2N1411 2N1500 2N1754 Text: M A D T R, M AT«, and SBT Germanium Transistors MADT PNP GERMANIUM HIGH-SPEED SWITCHES MAX. C U R R E N T AM PL. M A X IM U M R A T IN G S Type No. - V ces - V ceo Volts (Volts) FACTO R M ax Pd @ 25 C IlFE @ - l c arid - V ce (m in) (m A) (Volts) (Volts)	OCR Scan	PDF	2N501 2N501Af 2N1499A1 2N1499B N1500 2N393t 2N1122 2N1122A 2N1411t 2N1427 2N2048 2n2401 2N1499A 2N2170 2N2400 2N2168 2N1411 2N1500 2N1754
2N1146 Abstract: GERMANIUM* 2n1099 2N1100 2N1557 2N1358 2N1558 2N278 TO36 2N1031B 2N1982 Text: 55 GERM ANIUM POWER TRANSISTORS CURREIV JT G A IN S A T U R A T IO IM V O LT A G E S @ T Y PE N U M BER C A SE T YPE V CBO V 15 AIV P G E mm 2N278 2N677 2N677A TO-36 TO-3 TO-3 2N677B 2N677C 2N678 V C EO V EBO V UM PIVIP Obse V C ER V ve — i'' V C ES V	OCR Scan	PDF	2N278 2N677 2N677A 2N677B 2N677C 2N678 2N678A 2N678B 2N278 2N677 2N1146 GERMANIUM* 2n1099 2N1100 2N1557 2N1358 2N1558 TO36 2N1031B 2N1982
2n189 Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152 Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits	OCR Scan	PDF	2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
aeg diode Si 61 L Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books	OCR Scan	PDF	11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
transistor 2N4 Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748 Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION	OCR Scan	PDF
Tr431 Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76 Text: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 700 21012 AA200	OCR Scan	PDF	25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76

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2N112 Search Results

2N112 Price and Stock

Susumu Co Ltd RG2012N-112-W-T1

Vicor Corporation VI-2N1-12

Rochester Electronics LLC 74ABT32N,112

NXP Semiconductors 74ABT32N,112

NXP Semiconductors 74LV132N,112

2N112 Datasheets (105)

2N112 Datasheets Context Search

nkt270

2N2614

Untitled

Untitled

Untitled

2n1127

Untitled

Untitled

Untitled

2N1552

Untitled

Untitled

Untitled

DTG110B

2N1384

1N5438

AL102 ATES

2n7588

2N2048

2N1146

2n189

aeg diode Si 61 L

transistor 2N4

Tr431