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    2N678 Price and Stock

    Rochester Electronics LLC 2N6787

    POWER FIELD-EFFECT TRANSISTOR, N
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    Microchip Technology Inc 2N6788

    MOSFET N-CH 100V 6A TO39
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    Microchip Technology Inc 2N6782

    MOSFET N-CH 100V 3.5A TO39
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    Microchip Technology Inc 2N6784

    MOSFET N-CH 200V 2.25A TO39
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    Microchip Technology Inc 2N6782U

    MOSFET N-CH 100V 3.5A 18ULCC
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    Find more 2N678 price and stock on Findchips.com

    2N678 Datasheets (164)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N678 Germanium Power Devices Germanium Power Transistors Scan PDF
    2N678 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N678 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N678 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N678 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N678 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N678 Unknown Vintage Transistor Datasheets Scan PDF
    2N678 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N678 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N678 Semitron Germanium Power Transistors Scan PDF
    2N678 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF
    2N6781 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
    2N6781 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N6781 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6781 Unknown FET Data Book Scan PDF
    2N6781 Semelab MOS Transistors Scan PDF
    2N6781 Topaz Semiconductor 60 V, 06 ?, N-channel enhancement-mode D-MOS power FET Scan PDF
    2N6782 Fairchild Semiconductor TRANS MOSFET N-CH 100V 3.5A 3TO-205AF Original PDF
    2N6782 International Rectifier HEXFET TRANSISTORS Original PDF
    2N6782 Microsemi N Channel MOSFET; Package: TO-39; Original PDF
    ...

    2N678 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N67

    Abstract: 2N6784 TB334
    Text: [ /Title 2N67 84 /Subject (2.25A , 200V, 1.500 Ohm, NChannel Power MOSFET) /Autho r () 2N6784 Data Sheet December 2001 2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET Features • 2.25A, 200V The 2N6784 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for


    Original     		PDF 2N6784 2N6784 O-205AF 2N67 TB334

    2N6784

    Abstract: No abstract text available
    Text: 2N6784 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.


    Original     		PDF 2N6784 O205AF) 11-Oct-02 2N6784

    IRFE120

    Abstract: No abstract text available
    Text: 2N6788LCC4 IRFE120 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8


    Original     		PDF 2N6788LCC4 IRFE120 00A/s IRFE120

    100V 60A Mosfet

    Abstract: 50V 60A MOSFET 2N6788 IRFF120 100V 60A Diode
    Text: 2N6788 IRFF120 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. FEATURES 0.41 (0.016) 0.53 (0.021) dia. • AVALANCHE ENERGY RATING


    Original     		PDF 2N6788 IRFF120 O-205AF) 100V 60A Mosfet 50V 60A MOSFET 2N6788 IRFF120 100V 60A Diode

    Untitled

    Abstract: No abstract text available
    Text: 2N6788 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.


    Original     		PDF 2N6788 O205AF) 11-Oct-02

    Untitled

    Abstract: No abstract text available
    Text: 2N6782 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. APPLICATIONS 0.41 (0.016) 0.53 (0.021) dia. • FAST SWITCHING


    Original     		PDF 2N6782 O-205AF)

    Untitled

    Abstract: No abstract text available
    Text: 2N678C Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)100 I(C) Max. (A)15 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)100õ I(CBO) Max. (A)15m @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)10


    Original     		PDF 2N678C

    Untitled

    Abstract: No abstract text available
    Text: 2N678 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)50 I(C) Max. (A)15 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)100õ I(CBO) Max. (A)15m @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)10


    Original     		PDF 2N678

    2N6786U

    Abstract: No abstract text available
    Text: 2N6782U, 2N6784U and 2N6786U Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET compliant Qualified per MIL-PRF-19500/556 DESCRIPTION This family of 2N6782U, 2N6784U and 2N6786U switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in thru


    Original     		PDF 2N6782U, 2N6784U 2N6786U MIL-PRF-19500/556 2N6786U O-205AF 2N6782, 2N6784

    2N6788

    Abstract: 2n6790
    Text: 2N6788 and 2N6790 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/555 DESCRIPTION These 2N6788 and 2N6790 devices are military qualified up to a JANTXV level for highreliability applications. Microsemi also offers numerous other products to meet higher and


    Original     		PDF 2N6788 2N6790 MIL-PRF-19500/555 2N6790 MIL-PRF-19500/555. T4-LDS-0164,

    MOSFET

    Abstract: 2N6784
    Text: ne>. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 (212)227-6005 FAX: (973) 376-8960 U.SA 2N6784 2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET Features • 2.25A, 200V The 2N6784 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for


    Original     		PDF 2N6784 2N6784 O-205AF 00A/jis MOSFET

    Untitled

    Abstract: No abstract text available
    Text: 2N6782 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 0.89 max. (0.035) 12.70 (0.500) min. APPLICATIONS 0.41 (0.016) 0.53 (0.021) dia. • FAST SWITCHING • MOTOR CONTROLS


    Original     		PDF 2N6782 00A/ms 300ms,

    2N6784

    Abstract: TB334
    Text: 2N6784 Data Sheet April 1998 2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET • 2.25A, 200V • rDS ON = 1.500Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device


    Original     		PDF 2N6784 O-205AF 2N6784 TB334

    2N6782

    Abstract: TB334
    Text: 2N6782 Data Sheet November 1998 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET • 3.5A, 100V • rDS ON = 0.600Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device


    Original     		PDF 2N6782 O-205AF 2N6782 TB334

    Untitled

    Abstract: No abstract text available
    Text: 2N6782 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. APPLICATIONS 0.41 (0.016) 0.53 (0.021) dia. • FAST SWITCHING


    Original     		PDF 2N6782 O-205AF) 2N6782" 2N6782 2N6782-JQR-B 2N6782LCC4 2N6782LCC4-JQR-B 2N6782SMD 2N6782SMD-JQR-B O276AB)

    2N6782LCC4

    Abstract: IRFE110
    Text: 2N6782LCC4 IRFE110 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 VDSS ID(cont)


    Original     		PDF 2N6782LCC4 IRFE110 300ms, 2N6782LCC4 IRFE110

    Untitled

    Abstract: No abstract text available
    Text: 2N6786+JANTX Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)400 V(BR)GSS (V) I(D) Max. (A)1.2 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)15 Minimum Operating Temp (øC)


    Original     		PDF 2N6786

    2N6786

    Abstract: No abstract text available
    Text: Standard Power MOSFETs 2N6786 T j , JUNC TION TEMPERATURE fC T j, JUNCTION TEMPERATURE *C) 92GS-4412? Fig. 8 - B re a k d o w n v o lta g e vs. te m p e ra tu re . O 10 20 30 92GS-44128 Fig. 9 - N o rm a liz e d o n -re s is ta n c e vs. te m p e ra tu re .


    OCR Scan     		PDF 2N6786 92GS-44129 92GS-44131 92GS-44132 2N6786

    Untitled

    Abstract: No abstract text available
    Text: TE D DEI ^ EI ci347clt.3 0QlUb4d UnTtrode cokh 9347963 UN I TRODE CORP 92D POWER MOSFET TRANSISTORS 100 Volt, 0.30 Ohm N-Channel 10542 D r -3*1-01 2N6787 2N6788 FEATURES • Fast S w itch in g • Low Drive C urren t DESC RIPTIO N T h e U n itrode pow er M OSFET design utilizes th e m ost advanced technology available.


    OCR Scan     		PDF i347c

    1RF9130

    Abstract: jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120
    Text: Government/ Space Products bitematinnai ¡¡¡F te S ? H E X F E T , Mil-Qualified N-Channel Types JEDEC 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6796 2N6798 2N6800 2N6802 Part Numbers JANTX 2N6782 2N6784 2N6786 2N6788 JANTX2N6790


    OCR Scan     		PDF JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790 JANTX2N6792 JANTX2N6794 JANTX2N6796 JANTX2N6798 JANTX2N6800 1RF9130 jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120

    2n6789

    Abstract: No abstract text available
    Text: UNITRODE te corp 9347963 UN I T R O D E C O R P DE7| c13M7cit!3 QG1G54Û 92D 10548 ^ D POWER MOSFET TRANSISTORS 2N6789 2N6790 200 Volt, 0.80 Ohm N-Channel FEA TU RES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Tem perature Stability


    OCR Scan     		PDF c13M7cit QG1G54Û 2N6789 2N6790

    2N6782

    Abstract: 2n6800 LH0063 QPL-19500
    Text: Standard Power MOSFETs 2N6782 File Number 1592 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 3.5A, 100V ro s o n = 0 .6 O Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds


    OCR Scan     		PDF 2N6782 2N6782 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 LH0063 QPL-19500

    2N1146

    Abstract: GERMANIUM* 2n1099 2N1100 2N1557 2N1358 2N1558 2N278 TO36 2N1031B 2N1982
    Text: 55 GERM ANIUM POWER TRANSISTORS CURREIV JT G A IN S A T U R A T IO IM V O LT A G E S @ T Y PE N U M BER C A SE T YPE V CBO V 15 AIV P G E mm 2N278 2N677 2N677A TO-36 TO-3 TO-3 2N677B 2N677C 2N678 V C EO V EBO V UM PIVIP Obse V C ER V ve — i'' V C ES V


    OCR Scan     		PDF 2N278 2N677 2N677A 2N677B 2N677C 2N678 2N678A 2N678B 2N278 2N677 2N1146 GERMANIUM* 2n1099 2N1100 2N1557 2N1358 2N1558 TO36 2N1031B 2N1982

    Untitled

    Abstract: No abstract text available
    Text: •I 43 02 27 1 0 Q S 3 7 b l 35fl ■ HAS 2N6788 Jg HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Features Package T0-205A F BOTTOM VIEW • 6.0 A , 1 0 0V • rD S on = 0 - 3 0 n • S O A is P o w er-D issip atio n Lim ited


    OCR Scan     		PDF 2N6788 T0-205A LH0Q63