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    2N413 Search Results

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    2N413 Price and Stock

    Central Semiconductor Corp 2N4137

    TRANS 20V 0.2A TO18
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    DigiKey 2N4137 Box
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    Microchip Technology Inc 2N4138

    SMALL-SIGNAL BJT
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    Avnet Americas 2N4138 Bulk 22 Weeks 100
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    Mouser Electronics 2N4138
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    Newark 2N4138 Bulk 100
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    Microchip Technology Inc 2N4138 1
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    Onlinecomponents.com 2N4138
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    NAC 2N4138 20
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    Master Electronics 2N4138
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    Nisshinbo Micro Devices R1202N413B-TR-FE

    IC REG BOOST ADJ 350MA TSOT23-6
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    DigiKey R1202N413B-TR-FE Reel 3,000
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    Nisshinbo Micro Devices R1202N413A-TR-FE

    IC REG BOOST ADJ 350MA TSOT23-6
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    DigiKey R1202N413A-TR-FE Reel 3,000
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    Mouser Electronics R1202N413A-TR-FE
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    Samsung Semiconductor 2N4137

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    Bristol Electronics 2N4137 13 1
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    Quest Components 2N4137 10
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    2N413 Datasheets (128)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N413 General Electric Semiconductor Data Book 1971 Scan PDF
    2N413 Germanium Power Devices Germanium PNP Mesa Transistors Scan PDF
    2N413 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N413 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N413 Unknown GE Transistor Specifications Scan PDF
    2N413 Unknown GE Transistor Specifications Scan PDF
    2N413 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N413 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N413 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N413 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    2N413 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N413 Unknown Vintage Transistor Datasheets Scan PDF
    2N413 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N413 Semitron Alloy Junction Germanium Transistor Scan PDF
    2N413 Semitronics Alloy-Junction Germanium Transistors Scan PDF
    2N4130 ITT Semiconductors Semiconductor Summary 1969 Scan PDF
    2N4130 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N4130 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N4130 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N4130 Unknown Transistor Replacements Scan PDF
    ...

    2N413 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nkt270

    Abstract: Low-Power Germanium PNP 2N2635 2G30 2N2209 TR104 tr320 2g603 2N426 2N801
    Text: LOW-POWER GERMANIUM PNP Item Number . Part Number V BR CBO 5 10 2N413 2N413A 2N809 2N810 2N112 2N112A 2N1681 2N396A 2G396 2G396 ~~~~~ 15 20 -25 30 -35 40 2G303 2G303 2G303 2N801 2N802 2N426 2N1171 2N1017 NKT224 2G382 2G382 NKT221 NKT228 NKT303 2N623 TI385


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    PDF 2N413 2N413A 2N809 2N810 2N112 2N112A 2N1681 2N396A 2G396 nkt270 Low-Power Germanium PNP 2N2635 2G30 2N2209 TR104 tr320 2g603 2N426 2N801

    2N2101

    Abstract: 2N3713 2N4130 2N5632 t031
    Text: industrial power transistors 134 SILICON NPN •TRANSISTORS 1 0 Amp TYPE NUMBER CASE SIZE 2N2101 2N3713 2N3714 2N3715 2N3716 2N4130 2N5632 2N5633 2N5634 80T7711 80T7712 80T7713 80T7714 80T7715 80T7716 SOT7731 80T7732 80T7733 80T7734 80T7735 80T7736 80T7741


    Original
    PDF O-111 2N2101 2N3713 2N3714 2N3715 2N4130 2N5632 t031

    BD607

    Abstract: BDY17 sd1536-1 mj2940 motorola RCA1C07 bd608
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on fT tON r hFE ICBO (CE)set Toper Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) Max (°C) 275m 275m 275m 140 140 140 140 140 140 PD Package Style D vices 20 Watts or More, (Cont'd)


    Original
    PDF BD607 BD608 BDS10 BDS13 2SD369 2SD3690 2N5621 2N5622 2SD369Y BDY17 sd1536-1 mj2940 motorola RCA1C07

    2N2876

    Abstract: 2n3375 CE 65 M 2n3632 2N4132 TO-37 SPACE POWER ELECTRONICS
    Text: 8440355 SPACE SPACE POWER POWER 89C ELECTRONICS ELECTRONICS 7T RF P O W E R - 2 8 VOLT D 7~-33-o/ 00119 DE~|fi44D3SS D D D D i n • 424 "7437 • ASN <«14 .437 • 046 • 356 7T50" • 375 7455 • 1658 Rated Breakdown Voltages TYPE CASE 2N2876 2N3632


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    PDF -33-o/ fi44D3SS 2N2876 2N3632 2N3375 2N4132 CE 65 M TO-37 SPACE POWER ELECTRONICS

    switch NPN

    Abstract: BSY18 2N2369 2n4390
    Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV


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    PDF 2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A switch NPN BSY18 2N2369 2n4390

    2SK117BL

    Abstract: nec 2sk163 2Sk68a 2SK163 TO92 2sk163 2SK117-BL UC240 2SK523M 2SK105 TO92 2SK117-BL(F)
    Text: JUNCTION FETs Item Number Part Number Manufacturer V BR GSS loss 91s VGS(OH) IGSS (V) (A) Min (S) Max Max (V) Max (A) 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m


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    PDF 2N3069 2N3069A NDF9406 NDF9407 NDF9408 NDF9409 NDF9410 UC240 2SK117BL nec 2sk163 2Sk68a 2SK163 TO92 2sk163 2SK117-BL 2SK523M 2SK105 TO92 2SK117-BL(F)

    2N4136

    Abstract: 2N2432
    Text: M ILITA R Y APPROVED LOW LEVEL - HIGH SPEED ‘ 2N2432 2N2432A 2N4136 SILICON EPITAXIAL JUNCTION NPN SWITCHING TRANSISTORS GEOMETRY 485 M. E L E C T R IC A L D A T A J m i {A B SO LU T E M AXIM U M R A T IN G S ! P AR AM ETE R SYM BO L 2N2432/4138 2N2432A


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    PDF 2N2432 2N2432A 2N4136 2N2432/4138 2N4136 2N2432

    2N3933

    Abstract: BF180 BF181 2sc2570 2N3932 2N4134 2N4135 BF167 BF173 BF182
    Text: TO-72 METAL-CAN PACKAGE TRANSISTORS NPN E lectrical C haracteristics Maxim um R atings Type No. ts o (MA) hFE VCB « VCB0 VCE0 V EB0 (V) Min (V) Min (V) Min 2N3933 40 30 2.5 0.01 15 60 200 2 2N4134 30 30 3.0 0.05 10 25 200 2N4135 30 30 3.0 0.05 10 25 2N42S9


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    PDF 2N3933 2N4134 2N4135 2N42S9 BF167 O-72-1 2N2857 2N3478 2N3600 2NS180 BF180 BF181 2sc2570 2N3932 BF173 BF182

    2N2432A

    Abstract: 2n4138 2N243
    Text: TYPES 2*2432, 2N2432A, 2N4138 N-P-N SILICON TRANSISTORS BU LL ET IN NO. DL-S 6S9079, OCTOBER 1 9 6 6 -R E V lS E D JA N U A R Y 1968 FOR LOW-LEVEL, HIGH-SPEED CHOPPER APPLICATIONS IN INVERTED CONNECTION • Low Offset Voltage. . . 0.4 mV Max 2N2432A • low Iecs. . . 2 nA Max


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    PDF 2N2432A, 2N4138 6S9079, 2N2432A) 2N2432 2N2432A 2N243

    IC LA 4138

    Abstract: 2n343
    Text: M IL IT A R Y APPROVED LOW LEVEL - HIGH SPEED ‘ 2N2432 2N2432A S ILIC O N E P IT A X IA L JU N C TIO N NPN SW ITCH IN G T R A N S IS T O R S 2N4138 •AVAILABLE AS JAN. JAN-TX. JAN-TXV. JAN-S GEOMETRY 485 E L E C T R IC A L D A T A IA 8 S O I.U T I M A X IM U M M A T IN G S


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    PDF 2N2432 2N2432A 2N4138 i40kH T1779 IC LA 4138 2n343

    2N2432A

    Abstract: JAN-2N2432A 2N2432 2N4138 JAN-2N2432
    Text: M I L IT A R Y APPROVED LOW LEVEL - HIGH SPEED JAN-2N2432 JAN-2N2432A 2N4138 SILICON EP ITA XIAL JUNCTION NPN SWITCHING TRANSISTORS A V A IL A B L E AS JA N -T X AND J A N -T X -V GEOMETRY 41, PG. 57 ELECTRICAL D A TA ABSOLUTE M AXIM UM RATINGS PARAM ETER


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    PDF JAN-2N2432 JAN-2N2432A 2N4138 2N2432/4138 2N2432A 2N2432 2N4138

    BF167

    Abstract: BF200 transistor BF180 transistor 2sc2570 2n3600 2N4135 BFL84 2N3932 2N3933 2N4134
    Text: TO-72 METAL-CAN PACKAGE TRANSISTORS NPN E lectrical C haracteristics Maxim um R atings Type No. ts o (MA) hFE VCB « VCBO VCE0 V EBO (V) Min (V) Min (V) Min 2N3933 40 30 2.5 0.01 15 60 200 2 2N4134 30 30 3.0 0.05 10 25 200 2N4135 30 30 3.0 0.05 10 25 2N42S9


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    PDF 2N3933 2N4134 2N4135 2N42S9 BF167 2N2857 2N3478 2N3600 2NS180 MRFS01 BF200 transistor BF180 transistor 2sc2570 BFL84 2N3932

    to48c

    Abstract: IC LA 4138 TO-48C LA 4138 2N2432A TELEDYNE
    Text: TELEDYNE COMPONENTS aaE T - s r - i : 0T17bG2 GQObSfiH D D M ILITARY APPROVED LOW LEVEL - HIGH SPEED *2N2432 2N2432A 2N4138 SILICON E PITA XIA L JUNCTION NPN SWITCHING TRANSISTORS * AVAILABLE AS JAN, JAN-TX, JAN-TXV, JAN-S GEOMETRY 485 E LEC T R IC A L DATA


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    PDF 0T17bG2 2N2432 2N2432A 2N4138 2N2432/4138 flT17i a00b5 to48c IC LA 4138 TO-48C LA 4138 2N2432A TELEDYNE

    2n2432a

    Abstract: 2n2432
    Text: TYPES 2N2432, 2N2432A. ü4 « N-P-N SILICON TRANSISTORS B U L L E T IN NO. DL-S 6 8 9 0 7 9 , O C T O B E R 1 9 6 6 - R E V I S E D J A N U A R Y 1 9 6 8 FOR LOW-LEVEL, HIGH-SPEED CHOPPER APPLICATIONS IN INVERTED CONNECTION • Low Offset Voltage. . 0.4 mV Max 2N2432A


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    PDF 2N2432, 2N2432A. 2N2432A) 2N2432 2N2432A 2N4138

    UM9C

    Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651
    Text: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma


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    PDF DDDQS16 2N2242 2N2368 2N2369 2N2369A 2N2410 N2475 2N2481 2N2501 2N2651 UM9C J 2N930 2N2651

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION (V) (V) (V) (l*A) MIN MIN MIN MAX *ICES "IC E V @ lc hFE BVCBO BVCEO b v e b o ICBO @ VCBO (mA) (V) MIN e VCE VCE(SAT) @ 1C Cob (V) MAX (V) (mA) MAX (pF) fT NF ton (MHZ) (dB) (ns) MAX MIN


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    PDF 2N3576 2N3672 2N3700 2N4962 2N4963 2N5056 2N5057 2N4209 2N4269

    2N404

    Abstract: 2N508 2N414 same 2N1305 2N1415 2N525 2N527 GE 2N526 2N396 2N1924
    Text: 281 282 GERMANIUM SIGNAL TRANSISTORS B V ce r fh lb Package Outline No. Specification Sheet Ho. See 2N525. 281 20.10 See 2N524. 281 20.10 See 2N508, 2 N 1 17 5 and 2 N 1 41 3 series. 281 80.15 Pr Max. mW @ 1V, 20mA (iiA) (V) 2N43A’ 34-65 1.3 30 16 45 240


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    PDF 2N43A' 2N525. 2N44A 2N524. 2N188A 34-6S 2N508, 2N1175 2N1413 2N241A 2N404 2N508 2N414 same 2N1305 2N1415 2N525 2N527 GE 2N526 2N396 2N1924

    2N4122

    Abstract: 2N4121 2N4134 2n3771 2N4080 2N4135 2N3713 2N3714 2N3715 2N3716
    Text: 02 58354 ADVANCED SEMICO ND UC TOR_ _ ADVANCED S E M I C O N D U C T O R - 05 DE I 0 E S Ô 3 S 4 82 D 00044 DDDDD44 □ D 7"w- s 2— o S I L I C O N _« _ _ THAPJSISTOfiS Pd DEVICE TYPE NO. 2N3713 2N3714 2N3715 2N3716 2N3734 2N3735 2N3740 2N3741


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    PDF DDD44 2N3713 2N3714 2N3715 2N3716 2N3734 2N3735 2N3740 2N3741 2N3742 2N4122 2N4121 2N4134 2n3771 2N4080 2N4135

    2N3633

    Abstract: No abstract text available
    Text: CENTRAL SEMICONDUCTOR PE § QOOOSlfl 5 | NPN METAL CAN - SATURATED SWITCH Cont'd, VCB VCE V ge hFE at •c VCE Vc e (s) a* lc 2 } fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 _ 12 12 12 - 25 15 18 18 55 i V V V min


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    PDF 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2475 2N2481 2N2501 2N2651 2N2710 2N3633

    2N5057

    Abstract: JAN2N706A 2n5456
    Text: TRANSISTORS—SMALL SIGNAL NPN HIGH SPEED SATURATED SWITCHING TRANSISTORS BY ASCENDING VcEO METAL PACKAGE (toff ) ns @ IQ 2N834 M AX mA @ *C MIN - M A X mA TC 25°C MHz pF Ta 25°C mA MIN M AX mW W Package Complement 0.25 @ 10 350 4.0 300 1.0 TO-18 2N2894A


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    PDF 2N834 2N709 FT709 2N3010 2N709A 2N2475 2N3647 2N3510 2N3011 2N743 2N5057 JAN2N706A 2n5456

    2n3298

    Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613
    Text: jGmitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max


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    PDF 2N1613 2N16I3A 2N1613B 2N17I1 2N17IIA 2N3725A 2N3947 2N40B0 2N4137 2N4207 2n3298 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888

    2N4303

    Abstract: sd215 siliconix 2n4416 jfet JFET u1898 cross 2N4381 2N4393 JFET 2N3330 2n4267 2N4302
    Text: si6halFET Product Specifications 7-io N & P-Channel Single JFETs Siliconix N N N P P P 8.0 6.0 11.5 6.5 3.2 5.0 5.0 9.5. 20 20 40 40 40 30 30 30 _ - _ _ _ _ _ _ _ 45 45 - _ _ - _ 0.9 2.0 0.2 0.44 1.0 2.0 5.0 1.0 2.0 0.5 0.1 3.0 I5.0 15.0 _ 25 75 150 _ 90 60


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    PDF P1087 P1087-18 SD210 SD211 S0212 SD213 SD214 SD215 U1897 U1897-18 2N4303 sd215 siliconix 2n4416 jfet JFET u1898 cross 2N4381 2N4393 JFET 2N3330 2n4267 2N4302

    2N859

    Abstract: 2N270b 2N4135 2N915 2N2708 2N2865 2N4134 2N721 2N916 2N917
    Text: CENTRAL SEMICONDUCTOR : ' tï F Ë 1 nfl*nt3 D O O O S n 7 f 61C “00219. T ~ 5 l -0 / 1989963 CENTRAL SfcMlLUNÜUCTUK NPN METAL CAN - LOW IMOISE LEVEL AM PLIFIER ContU VCB VCE V EB hpE at •c VCE V V V min max mA V V mA MHz 2N3117 2N4383 2N4384 2N4385


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    PDF 2n3117 to-18 2n4383 2n4384 2n4385 2n4386 CBR30 0000S23 2N859 2N270b 2N4135 2N915 2N2708 2N2865 2N4134 2N721 2N916 2N917

    2N9308

    Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
    Text: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5


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    PDF 00DDS7Ã T-A7-01 2N497 12/3S 30/S9 2N3725A 2N3947 2N4080 2N4137 2N4207 2N9308 2N221BA 2N69S 2N3304 2M2193 2NI893 2N236S 2N408 2N238