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    2N426 Price and Stock

    Rochester Electronics LLC 2N4264

    TRANS NPN 15V 0.2A TO92
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    Microchip Technology Inc 2N4261

    TRANS PNP 15V 0.03A TO72
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    Microchip Technology Inc 2N4261UB

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    Microchip Technology Inc JAN2N4261

    TRANS PNP 15V 0.03A TO72
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    Microchip Technology Inc JAN2N4261UB

    TRANS PNP 15V 0.03A UB
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    2N426 Datasheets (125)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N426 Germanium Power Devices Germanium PNP Mesa Transistors Scan PDF
    2N426 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N426 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N426 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N426 Unknown GE Transistor Specifications Scan PDF
    2N426 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N426 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N426 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N426 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N426 Unknown Vintage Transistor Datasheets Scan PDF
    2N426 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N426 Semitron Alloy Junction Germanium Transistor Scan PDF
    2N426 Semitronics Alloy-Junction Germanium Transistors Scan PDF
    2N4260 Semico Chip Type 2C4261 Geometry 0014 Polarity PNP - Pol=PNP / Pkg=TO72 / Vceo=15 / Ic=30m / Hfe=25min / fT(Hz)=.6G / Pwr(W)=0.2 Original PDF
    2N4260 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N4260 Motorola The European Selection Data Book 1976 Scan PDF
    2N4260 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N4260 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N4260 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N4260 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    ...

    2N426 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N4261

    Abstract: 2N4261UB
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/511 DEVICES LEVELS 2N4261 2N4261UB JAN JANTX JANTXV


    Original     		PDF MIL-PRF-19500/511 2N4261 2N4261UB 2N4261UB, T4-LDS-0150 2N4261 2N4261UB

    Untitled

    Abstract: No abstract text available
    Text: 2N4262 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)25 I(C) Max. (A)200m Absolute Max. Power Diss. (W)1.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n÷ @V(CBO) (V) (Test Condition)


    Original     		PDF 2N4262 Freq900M

    Untitled

    Abstract: No abstract text available
    Text: ^s.m.i-Condimto'i 'Lpioaucti, One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N4261 Polarity PNP Features: • • Fast switching small signal silicon transistor. Housed in a TO-72 case.


    Original     		PDF 2N4261 -65to

    2N4261

    Abstract: 2N4261J 2N4261JS 2N4261JV 2N4261JX
    Text: 2N4261 Silicon PNP Transistor D a ta S h e e t Description Applications Semicoa offers: • General purpose switching transistor • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4261J • JANTX level (2N4261JX)


    Original     		PDF 2N4261 MIL-PRF-19500 2N4261J) 2N4261JX) 2N4261JV) 2N4261JS) MIL-STD-750 MIL-PRF-19500/511 2N4261 2N4261J 2N4261JS 2N4261JV 2N4261JX

    Untitled

    Abstract: No abstract text available
    Text: 2N4269S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 140V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products


    Original     		PDF 2N4269S O206AA) 10/10m 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N4261UB Compliant available PNP Small Signal Silicon Transistor Qualified per MIL-PRF-19500/511 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This 2N4261UB small signal transistor features ceramic bodied construction with a metal lid for military grade products per MIL-PRF-19500/511. It is also available with a ceramic lid in the


    Original     		PDF 2N4261UB MIL-PRF-19500/511 2N4261UB MIL-PRF-19500/511. 2N4261 T4-LDS-0150-1,

    2N4261

    Abstract: 2N4261J 2N4261JS 2N4261JV 2N4261JX
    Text: 2N4261 Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching transistor • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4261J


    Original     		PDF 2N4261 MIL-PRF-19500 2N4261J) 2N4261JX) 2N4261JV) 2N4261JS) MIL-STD-750 MIL-PRF-19500/511 2N4261 2N4261J 2N4261JS 2N4261JV 2N4261JX

    Untitled

    Abstract: No abstract text available
    Text: 2N4261+JANTX Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelY V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)5.0n÷ @V(CBO) (V) (Test Condition)10


    Original     		PDF 2N4261

    2n4269

    Abstract: No abstract text available
    Text: 2N4269 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 140V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products


    Original     		PDF 2N4269 O206AA) 10/10m 16-Jul-02 2n4269

    Untitled

    Abstract: No abstract text available
    Text: 2N4269 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 140V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products


    Original     		PDF 2N4269 O206AA) 10/10m 19-Jun-02

    2n4260

    Abstract: No abstract text available
    Text: 2N4260 Chip: geometry 0014; polarity PNP 4.99 Transistors UHF/Micr. 1 of 1 Home Part Number: 2N4260 Online Store 2N4260 Diodes C hip: geo m et ry 0 0 1 4 ; po larit y PNP Transistors Enter code INTER3 at


    Original     		PDF 2N4260 com/2n4260 2N4260

    2N4261

    Abstract: No abstract text available
    Text: 2N4261 Chip: 4.5V; 30A geometry 0014; polarity PNP 4.99 Transistors . 1 of 1 Home Part Number: 2N4261 Online Store 2N4261 Diodes C hip: 4 .5 V; 3 0 A ge o m et ry 0 0 1 4 ; po larity PNP Transistors


    Original     		PDF 2N4261 com/2n4261 2N4261

    nkt270

    Abstract: Low-Power Germanium PNP 2N2635 2G30 2N2209 TR104 tr320 2g603 2N426 2N801
    Text: LOW-POWER GERMANIUM PNP Item Number . Part Number V BR CBO 5 10 2N413 2N413A 2N809 2N810 2N112 2N112A 2N1681 2N396A 2G396 2G396 ~~~~~ 15 20 -25 30 -35 40 2G303 2G303 2G303 2N801 2N802 2N426 2N1171 2N1017 NKT224 2G382 2G382 NKT221 NKT228 NKT303 2N623 TI385


    Original     		PDF 2N413 2N413A 2N809 2N810 2N112 2N112A 2N1681 2N396A 2G396 nkt270 Low-Power Germanium PNP 2N2635 2G30 2N2209 TR104 tr320 2g603 2N426 2N801

    diode bsy28

    Abstract: BF152 CS9018 BF158 2SC738 2N3984 bsy28 diode SC2644 PN3563 BSY28
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 BSY17 BSY18 BSY18 EN744 2N3985 BF153 BSX90 BSX90 BSX90 2N4421 2N4421 BSX91 BSX91 BSX91 2N4265 2S131 2S131 2S131 2SC739 C111E ~~~~9 25 30 - 35 -40 45 - 50 55 60 65 70 75 80 -85 90 95 BSY28


    Original     		PDF BSY17 BSY18 EN744 2N3985 BF153 BSX90 2N4421 diode bsy28 BF152 CS9018 BF158 2SC738 2N3984 bsy28 diode SC2644 PN3563 BSY28

    Untitled

    Abstract: No abstract text available
    Text: 2N4267 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)25 I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)400m Minimum Operating Temp (øC)


    Original     		PDF 2N4267

    Untitled

    Abstract: No abstract text available
    Text: 2N426 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)30 I(C) Max. (A)400m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)4.0u @V(CBO) (V) (Test Condition)1.5 h(FE) Min. Current gain.30 h(FE) Max. Current gain.60


    Original     		PDF 2N426

    Untitled

    Abstract: No abstract text available
    Text: 2N4261+JANTXV Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelY V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)5.0n÷ @V(CBO) (V) (Test Condition)10


    Original     		PDF 2N4261

    Untitled

    Abstract: No abstract text available
    Text: 2N4264 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)310m Maximum Operating Temp (øC)135þ I(CBO) Max. (A).1uØ÷ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.


    Original     		PDF 2N4264 Freq300M

    Untitled

    Abstract: No abstract text available
    Text: 2N4261 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)5.0n÷ @V(CBO) (V) (Test Condition)10


    Original     		PDF 2N4261

    N2369

    Abstract: 2N4260 2N2368 2N3546 2N2369A 2N3227 2N4261 2N706 2N708 2N869A
    Text: TO-18 T R A N S IS T O R S F A S T S P E E D SW IT C H NPN Device Type 2N706 2N708 2N914 2N2368 2N 2369 2 N 2369A 2N3227 BSX90 2N4260 2N4261 lc max. mA Polarity v C EO , VcER<+> (Volts) NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 20 (+ ) 15 15 15 15 15 20 12


    OCR Scan     		PDF 2N706 2N708 2N914 N2368 N2369 2N2369A 2N3227 BSX90 2N4260 2N4261 2N2368 2N3546 2N869A

    2N4265

    Abstract: 2N4264 QS 100 NPN Transistor
    Text: 2N4264 2N4265 MAXIMUM RATINGS Symbol 2N4264 2N4265 Collector-Emitter Voltage VCEO 15 12 Collector-Base Voltage v CBO Emitter-Base Voltage Characteristic 30 Unit Vdc Ve b o 6.0 Vdc Collector Current — Continuous Ic 200 mAdc Total Device Dissipation a T a = 25°C


    OCR Scan     		PDF 2N4264 2N4265 2N4265 O-226AA) 2N426S QS 100 NPN Transistor

    2N4260

    Abstract: 2N4261
    Text: TYPES 2N4260, 2N4261 P-N-P SILICON TRANSISTORS B U L L E T IN N O . O L -S 7 3 1 1 9 3 3 , J U N E 1 9 7 3 DESIGNED FOR VHF AND UHF AMPLIFIER APPLICATIONS • High f j . . . 2 GHz Min 2N4261 • Low Capacitances . . . 2.5 pF Max Ccb and Ceb • Calculated f maxt . . . 1.27 GHz Min (2N4261)


    OCR Scan     		PDF 2N4260, 2N4261 2N4261) 2N4260

    2N4265

    Abstract: 2904S
    Text: 2N4264 2N4265 MAXIMUM RATINGS Symbol 2N4264 2N4265 Unit Collector-Emltter Voltage Characteristic VCEO 15 12 Vdc Collector-Base Voltage v CBO Emitter-Base Voltage 30 v EBO 6.0 Vdc Collector Current — Continuous ic 200 mAdc Total Device Dissipation @ Ta = 25°C


    OCR Scan     		PDF 2N4264 2N4265 2N4265 O-226AA) 010332b 2904S

    2n426

    Abstract: 2N4264 2n4265
    Text: 2N4264 2N4265 M AXIMUM RATINGS Symbol 2N4264 2 N4265 Unit C o lle c to r-E m itte r V o lta g e v CEO 15 12 Vdc C o lle c to r-B a s e V o lta g e v CBO E m itte r-B a s e V o lta g e Characteristic 30 v EBO 6.0 Vdc C o lle c to r C u rre n t — C o n tin u o u s


    OCR Scan     		PDF 2N4264 2N4265 2N4264 N4265 O-226AA) 2N4264, 2n426 2n4265