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    2N4862 Search Results

    2N4862 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N4862 API Electronics Transistor Selection Guide Scan PDF
    2N4862 API Electronics Short form transistor data Short Form PDF
    2N4862 API Electronics Short form transistor data Short Form PDF
    2N4862 General Diode Transistor Selection Guide Scan PDF
    2N4862 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N4862 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N4862 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N4862 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N4862 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N4862 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N4862 Unknown Vintage Transistor Datasheets Scan PDF
    2N4862 Unknown Vintage Transistor Datasheets Scan PDF
    2N4862 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N4862 Pirgo Electronics Silicon Planar Power Transistors Scan PDF
    2N4862 Pirgo Electronics Silicon Planar Power Transistors Scan PDF
    2N4862 Pirgo Electronics 2 Amp NPN Silicon Planar Power Transistors Scan PDF
    2N4862 Semitronics Silicon Power Transistors Scan PDF
    2N4862 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF

    2N4862 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SDT5055

    Abstract: SDT5001 SDT5052 SDT5505 Datasheet SDT5554 SDT5010 SDT5513 2N2150 2N2151 2N3788
    Text: hFE V Device VCEO @ IC A CE (sat) @ IC (A) Type (V) Min/Max Max (V) 2N2150 80 20/60 1.0 1.25 1.0 2N2151 80 40/120 1.0 1.25 1.0 2N3788 325 20/180 0.5 1.00 1.5 2N3917 40 30/120 1.0 1.20 1.0 2N3918 40 100/300 1.0 1.20 1.0 2N4300 80 30/120 1.0 0.50 0.2 2N4862


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    PDF 2N2150 2N2151 2N3788 2N3917 2N3918 2N4300 2N4862 2N4863 2N4864 2N4998 SDT5055 SDT5001 SDT5052 SDT5505 Datasheet SDT5554 SDT5010 SDT5513 2N2150 2N2151 2N3788

    2N1718

    Abstract: 2N1720 2N1714
    Text: 8440355 SPACE POWER SPACE POWER 89C ELECTRONICS 00098 D J^JS~0 DE | 5440355 ODOOOIA 0 Hi-Rel PLANAR P O W E R — 2 AMP NPN ELECTRONICS FOR D E T A I L E D S P E C I F I C A T I O N S C O N T A C T ENGINEERING MOTES I (Three Leads (Dim. .011 mln. and .019 aax.) applies between (.050


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    2n4889

    Abstract: 2N4858 TEXAS 2N4418 2sa777 2n4891 2N4917 2SA8150 6ae diode 2N4417 2N6556
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M


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    2N1720

    Abstract: 2N1718 2N1714 2N2992 2N486
    Text: 8440355 SPACE POWER SPACE POWER 89C ELECTRONICS 00098 D J^JS~0 DE | 5440355 ODOOOIA 0 Hi-Rel PLANAR P O W E R — 2 AMP NPN ELECTRONICS FOR D E T A I L E D S P E C I F I C A T I O N S C O N T A C T ENGINEERING MOTES I (Three Leads (Dim. .011 mln. and .019 aax.) applies between (.050


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    2N4858 TEXAS

    Abstract: 2N4872 SIEMENS 5SN 2N4433 Qualidyne 2N4418 transtek 40391 RCA 2N4417 api 560
    Text: POWER SILICON PNP Item Number Part Number I C 15 20 25 35 45 55 60 65 320 300 300 300 400 80M 70M 70M 70M KSA931 2N3468 2S8733 2N6094 8CX69-10 2S8956 8CX69-16 8CX69-25 MPS6651 MPS6651 Samsung See Index NEC Corp JA See Index Siemens Akt Matsushita Siemens Akt


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    PDF O-126 O-126var 2S8549 2S8527 2S8528 2S81217 KSA931 2N3468 2S8733 2N4858 TEXAS 2N4872 SIEMENS 5SN 2N4433 Qualidyne 2N4418 transtek 40391 RCA 2N4417 api 560

    Untitled

    Abstract: No abstract text available
    Text: COLLECTOR CURRENT = 2 AMPS NPN TYPES 2N1720 2N1889 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992 2N2993 2N2994 2N3665 2N3666 2N3766 2N3767 2N3917 2N3918 2N4000 2N4001 2N4237 2N4238 2N4239 2N4240 2N4862 2N4863 2N4864 2N4910 2N4911 2N4912 2N5050


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    PDF 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2N1718 2N1719

    2N4863A

    Abstract: 2N4862 2N4863 2N4864
    Text: 0043 592 A P I ELECTRONICS : 93A004S T -2 7 -0 9 TNC P I ELECTRONICS INC De | O O ^ S I S POWER TRANSISTORS ENGINEERING BULLETIN • GG_GGG4ê "1 2N4862/2N4863/2N4864 TYPE 2N 4862, 2N4863, 2N 4864,2 AMP NPN SILICON PLANAR POWER TRANSISTORS wgm T E R M IN A L C O N N E C T O N S


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    PDF 93A004S T-27-09 43ST2 2N4862/2N4863/2N4864 2N4863 2N4862 11sec; 789100V 2N4863A 2N4862 2N4863 2N4864

    2N4862

    Abstract: 2N4863 TG70 2N4864 Pirgo Electronics 95a0 95A048
    Text: 0043 592 A P I ELECTRONICS TNC 95A0 48 T-g7-09_ P I ELECTRONICS INC . T3 DE 1^0435^2 DOOOOMfl T POWER TRANSISTORS ENGINEERING BULLETIN ID 2N4862/2N4863/2N4864 TYPE 2N 4862, 2N 4863, 2 N 4 8 6 4 ,2 AMP NPN SILICON PLANAR POW ER TRANSISTORS


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    PDF T-g7-09 2N4862/2N4863/2N4864 2N4862, 2N4863, 2N4862 789100V 2N4862 2N4863 TG70 2N4864 Pirgo Electronics 95a0 95A048

    2N4863

    Abstract: 2N4862 2N4864 TG70
    Text: 0043 592 A P I ELECTRONICS 95A0 48 T-g7-09_ TNC P I ELECTRONICS INC . T3 DE 1 ^ 0 4 3 5 ^ 2 DOOOOMfl T POWER TRANSISTORS ENGINEERING BULLETIN ID 2N4862/2N4863/2N4864 TYPE 2N 4862, 2N 4863, 2 N 4 8 6 4 ,2 AMP NPN SILICON PLANAR POW ER TRANSISTORS


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    PDF T-g7-09 2N4862/2N4863/2N4864 2N4862, 2N4863, 2N4862 2N4863 789100V 2N4864 TG70

    PG2020

    Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053
    Text: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6


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    PDF 2N4862 PG1001 PG1002 PG1003 PG1004 PG1005 PG1006 PG1007 PG1008 PG1009 PG2020 PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053

    2N2991

    Abstract: 2N2992 2N2993 2N2994 2N3665 2N3766 2N3767 2N3917 2N3918 2N4000
    Text: 0043592 A P I ELECTRONICS A P I ELECTRONICS INC 26C 00 2 1 8 I NC lit . DE I OOMBS^a ODODaia ñ COLLECTOR CURRENT = 2 AMPS NPN TYPES - CONTINUED Device No 2N2991 Case T O -5 STUD T O -5 STUD T O -5 STUD TO -5 STUD T O -5 T O -5 T O -66 T O -66 T O -3 TO -3


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    PDF 2N2991 2N2992 2N2993 2N2994 2N3665 -2n3666 2N3766 2N5680 2N6211 2N6212 2N3767 2N3917 2N3918 2N4000

    SDT423

    Abstract: No abstract text available
    Text: _ 8 3686 02 SO LITRON D EV IC ES INC_ 95D 02758 SOLITRON DEVICES INC T5 D — T"“- 3 3 - 0 / Ïm F | ù3bflbD2 00D57SA S | T i - t^WÊÊÊFBlË • P L A N A R P O W ER TR A N S IS TO R S % 5m O < M M DEVICE TYPE hpE MIN/MAX @ ic A


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    PDF 00D57SA 2N2150 2N2151 2N3788 2N3917 2N3918 O-111 2N3025 2N3026 SDT423

    pg2010

    Abstract: PG1083 PG2020 2N4862 PG1001 PG1002 PG1003 PG1004 PG1005 PG2001
    Text: Linear hFE from 10 mA to 2 amps Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi.„,i to 160 volts 'M h '.4 M T O —46 T O —46 T O —4 6 T O —4 6 T O —46 T O —4 6 S iîS $*‘v>


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    PDF 2N4862 PG1001 PG1002 PG1003 PG1004 PG1005 PG1006 PG1007 PG1008 PG1009 pg2010 PG1083 PG2020 PG2001

    2n2301

    Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
    Text: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74


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    PDF 2N727 2N869A 2N929A 2N930' 2N930A 2N1572 2N1S73 2N1574 2N24S3 2N2484 2n2301 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815

    Untitled

    Abstract: No abstract text available
    Text: 1 1 1 ESSOELECTRONICS, INC. PARAMETER TABLES COLLECTOR CURRENT = 2 AMPS NPN TYPES ì 1 ] ] ] 1 1 11 1 1 1 fl 1 1 Device No 2N1252 2N1253 2N1506 2N1506A 2NX714 2N1715 2N1716 2N1717 2NX718 2N1719 2N1720 2N1721 2N1B89 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989


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    PDF 2N1252 2N1253 2N1506 2N1506A 2NX714 2N1715 2N1716 2N1717 2NX718 2N1719

    2N1718

    Abstract: 2N1720 2N3665 SDT5052 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1716
    Text: 11 SILICON POWER TRANSISTORS CURREIS T G A IN SATURATIO N J V O LT A G E S 3 TYPE NUM BER CASE TYPE V CBO V Yceo v V EBO V h FE M IN . I M A X . v V CE s) V BE(s> V I V A 'c A I *B A 2 AMP SILICON NPN 2N1252 2N1253 2N 1506 TO-5 TO-5 TO-5 30 30 60 20 20 40


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    PDF 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1716 2N1718 MT-13 2N1720 2N3665 SDT5052

    2N3774

    Abstract: 2N2991 2N2992 2N2993 2N2994 2N3665 2N3666 2N3766 2N3767 2N3917
    Text: 0043592 A P I A P I EL ECT RONICS ELECTRONICS INC 26C I NC lit . 00218 DE I OOMBS^a ODODaia ñ COLLECTOR CURRENT = 2 AMPS NPN TYPES - CONTINUED Device No 2N2991 Case T O -5 STUD T O -5 STUD T O -5 STUD TO -5 STUD T O -5 T O -5 T O -66 T O -66 T O -3 TO -3


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    PDF DT-33- 2N2991 2N2992 2N2993 2N2994 2N3665 -2N3666 2N3766 2N5680 2N6211 2N3774 2N3666 2N3767 2N3917

    pg2004

    Abstract: PG2011 pg2001 PG2006
    Text: O a P I ELECTRONICS INC ^3 DE • G n ^ S I S 0000004 Q • Linear hFE from 10 mA to 2 amps • Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi i to 160 volts «■’ S T 1 B hF E hFE


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    PDF 2N4862 PG1001 PG1002 PG1003 PG1004 PG1005 PG1006 PG1007 PG1008 PG1009 pg2004 PG2011 pg2001 PG2006

    Untitled

    Abstract: No abstract text available
    Text: [A F I E L E C T R O N IC S 13 Y - _ ^3 A 0 0 75f IN C DE~| aDM aS^S 0D 0007S 1 p IN T E R IM B U L LE T IN Subject to Revision W ithout Notice -July 15, 1971 POWER TRANSISTOR ENGINEERING BULLETIN P I R G O E itC T R om cs inc. TYPE PG lbO l thru PG1017, 2 A M P NPN


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    PDF 0007S PG1017, PG1001 PG1002 PG1003 2N4862 PG1004 PG1005 PG1006 PG1007

    2N3016

    Abstract: SDT5052 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1716 2N1718 2N1720
    Text: 11 SILICON POWER TRANSISTORS CURREIS T G A IN SATURATIO N J V O LT A G E S 3 TYPE NUM BER CASE TYPE V CBO V Yceo v V EBO V h FE M IN . I M A X . v V CE s) V BE(s> V I V A 'c A I *B A 2 AMP SILICON NPN 2N1252 2N1253 2N 1506 TO-5 TO-5 TO-5 30 30 60 20 20 40


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    PDF 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1716 2N1718 MT-13 2N1720 2N3016 SDT5052

    2N1718

    Abstract: 2N1720 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717
    Text: Ü J iä ELECTRONICS, INC. \ - 7 PARAMETER TABLES COLLECTOR CURRENT = 2 AMPS NPN TYPES Device No 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2N1718 2N1719 2N1720 2N1721 2N1889 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992 2N2993


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    PDF 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2N1718 2N1719 2N1720

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    2N2222A mps

    Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
    Text: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71


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    PDF 1N34A 1N55AB 1N100 1N102 1N103 1N104 1N107 1N108 1N111/ 1N117 2N2222A mps 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304

    2N3920

    Abstract: 2N648 2N2004 2N2995 2N2202 2N2860 TO11 2N2228 2N29SA 2n4307
    Text: £ ^ I jemitronicr hot line discrete devices TOLL FREE NUMBER 800-777-3960 silicon transistors cont-d silicon small signal transistors choppers Type Polarity Power Dissipation @ 25°C mw tlFE @ lc Tj (°C) BVcbo (volts) HILL (volts) Vet (SAT @ lc (Min.)


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    PDF 2N941* 2N942* 2N943* 2N944* 2N945* 2N946* 2N1676 2N1677 2N1917* 2N1918* 2N3920 2N648 2N2004 2N2995 2N2202 2N2860 TO11 2N2228 2N29SA 2n4307