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Microchip Technology Inc 2N3766 TRANS NPN 60V 4A TO66
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NAC	2N3766	Tray			12	1 $29.59 10 $29.59 100 $27.25 1000 $25.26 10000 $25.26	Buy Now
Master Electronics	2N3766					1 - 10 - 100 $25.71 1000 $25.71 10000 $25.71	Buy Now
Microchip Technology Inc JAN2N3766 TRANS NPN 60V 4A TO66
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DigiKey	JAN2N3766	Bulk			100	1 - 10 - 100 $24.79 1000 $24.79 10000 $24.79	Buy Now
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Microchip Technology Inc	JAN2N3766					1 $26.7 10 $26.7 100 $26.7 1000 $26.7 10000 $26.7	Buy Now
NAC	JAN2N3766	Tray			13	1 $27.24 10 $27.24 100 $25.09 1000 $23.26 10000 $23.26	Buy Now

Avnet Silica	JAN2N3766			38 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	JAN2N3766			37 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	JAN2N3766					1 - 10 - 100 $23.67 1000 $23.67 10000 $23.67	Buy Now
Microchip Technology Inc JANTX2N3766 TRANS NPN 60V 4A TO66
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DigiKey	JANTX2N3766	Bulk			100	1 - 10 - 100 $28.5101 1000 $28.5101 10000 $28.5101	Buy Now
Avnet Americas	JANTX2N3766	Bulk		36 Weeks	100	1 $30.7 10 $30.7 100 $28.51 1000 $27.41 10000 $27.41	Buy Now
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Microchip Technology Inc	JANTX2N3766		489			1 $30.7 10 $30.7 100 $30.7 1000 $30.7 10000 $30.7	Buy Now
NAC	JANTX2N3766	Tray			11	1 $31.33 10 $31.33 100 $28.86 1000 $26.74 10000 $26.74	Buy Now

Avnet Silica	JANTX2N3766			38 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	JANTX2N3766					1 - 10 - 100 $27.22 1000 $27.22 10000 $27.22	Buy Now
Microchip Technology Inc JANTXV2N3766 TRANS NPN 60V 4A TO66
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DigiKey	JANTXV2N3766	Bulk			100	1 - 10 - 100 $31.0801 1000 $31.0801 10000 $31.0801	Buy Now
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Microchip Technology Inc	JANTXV2N3766					1 $33.47 10 $33.47 100 $33.47 1000 $33.47 10000 $33.47	Buy Now
NAC	JANTXV2N3766	Tray			10	1 $34.16 10 $34.16 100 $31.46 1000 $29.16 10000 $29.16	Buy Now

Master Electronics	JANTXV2N3766					1 - 10 - 100 $29.68 1000 $29.68 10000 $29.68	Buy Now
VPT Components JANSR2N3766 JANSR2N3766 - Bulk (Alt: JANSR2N3766)
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Avnet Americas	JANSR2N3766	Bulk			22	1 - 10 - 100 $63.1176 1000 $59.4048 10000 $59.4048	Buy Now
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2N3766 Datasheets (53)

Part	Manufacturer	Description	Datasheet Type	PDF
2N3766	Microsemi	NPN Power Silicon Transistor	Original	PDF
2N3766	Semelab	Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package - Pol=NPN / Pkg=TO66 / Vceo=60 / Ic=4 / Hfe=40-160 / fT(Hz)=10M / Pwr(W)=20	Original	PDF
2N3766	Advanced Semiconductor	Silicon Transistors	Scan	PDF
2N3766	API Electronics	Transistor Selection Guide	Scan	PDF
2N3766	API Electronics	Short form transistor data	Short Form	PDF
2N3766	API Electronics	Short form transistor data	Short Form	PDF
2N3766	Central Semiconductor	BJT, NPN, Power Transistor, IC 4A - Pol=NPN / Pkg=TO66 / Vceo=60 / Ic=4 / Hfe=40-160 / fT(Hz)=10M / Pwr(W)=20	Scan	PDF
2N3766	Diode Transistor	Transistors	Scan	PDF
2N3766	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	Scan	PDF
2N3766	General Diode	Transistor Selection Guide	Scan	PDF
2N3766	General Semiconductor	Low Frequency Silicon Power Transistor (Also available in JAN & JANTX)	Scan	PDF
2N3766	General Transistor	Power Transistor Selection Guide	Scan	PDF
2N3766	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2N3766	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF

2N3766	Motorola	The European Selection Data Book 1976	Scan	PDF
2N3766	Motorola	European Master Selection Guide 1986	Scan	PDF
2N3766	Motorola	Power Transistor Selection Guide	Scan	PDF
2N3766	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N3766	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N3766	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF

2N3766 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N3766 Abstract: No abstract text available Text: 2N3766 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a	Original	PDF	2N3766 O213AA) 1-Aug-02 2N3766
2N3766 Abstract: 2N3767 JANTX 2N3767 Text: NPN Power Silicon Transistor 2N3766 & 2N3767 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/518 • TO-66 TO-213AA Package Maximum Ratings Symbol 2N3766 2N3767 Units Collector - Emitter Voltage Ratings VCEO 60 80 Vdc Collector - Base Voltage	Original	PDF	2N3766 2N3767 MIL-PRF-19500/518 O-213AA) 2N3766 2N3767 JANTX
2N3766 Abstract: transistor 2N3766 Text: NPN SILICON TRANSISTOR Semelab Limited 2N3766 • LOW SATURATION VOLTAGE • HIGH GAIN CHARACTERISTICS • HERMETICALLY SEALED TO-66 METAL PACKAGE • SCREENING OPTIONS AVAILABLE • SWITCHING APPLICATIONS • MEDIUM POWER AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated	Original	PDF	2N3766 143mW/ O-213AA) 2N3766 transistor 2N3766
2N3738 equivalent Abstract: 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420 Text: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912	Original	PDF	2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420 2N6421 2N3738 equivalent 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420
2N3767 Abstract: 2N3766 2000C transistor 2N3766 Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/518 Devices Qualified Level 2N3766 JAN JANTX JANTXV 2N3767 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current	Original	PDF	MIL-PRF-19500/518 2N3766 2N3767 O-213AA) 2000C 2N3767 2N3766 2000C transistor 2N3766
Untitled Abstract: No abstract text available Text: 2N3766+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2N3766 Freq10M
2N3766SMD05 Abstract: No abstract text available Text: 2N3766SMD05 Dimensions in mm inches . 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3.05 (0.120) 0.127 (0.005) 3 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount	Original	PDF	2N3766SMD05 O276AA) 15-Aug-02 2N3766SMD05
2N4001 diode Abstract: 2N2990 MT27 2N3665 2N4001 diode 2n4001 2N2987 2N2988 2N2989 2N2991 Text: Device Type VCEO hFE V Min/Max 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992 2N2993 2N2994 2N3439 2N3440 2N3665 2N3666 2N3766 2N3767 2N4000 2N4001 2N4237 2N4238 2N4239 2N4910 2N4911 2N4912 2N5660 2N5661 2N5662 2N5663 2N5681 2N5682 80 100 80 100 80 100 80 100	Original	PDF	2N2987 2N2988 2N2989 2N2990 2N2991 2N2992 2N2993 2N2994 2N3439 2N3440 2N4001 diode 2N2990 MT27 2N3665 2N4001 diode 2n4001 2N2987 2N2988 2N2989 2N2991
900NT Abstract: 2N3766 Text: 2N3766 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME \| CATALOG \| CART \|EXPRESS CHECKOUT \| PARTS WATCH \| NEW ITEMS \|RFQ\| Home 2N3766 Availability Online Store	Original	PDF	2N3766 2N3766 STV3208 LM3909N LM3909 900NT
Untitled Abstract: No abstract text available Text: NPN SILICON TRANSISTOR Semelab Limited 2N3766 • LOW SATURATION VOLTAGE • HIGH GAIN CHARACTERISTICS • HERMETICALLY SEALED TO-66 METAL PACKAGE • SCREENING OPTIONS AVAILABLE • SWITCHING APPLICATIONS • MEDIUM POWER AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated	Original	PDF	2N3766 143mW/Â 100mA O-213AA)
Untitled Abstract: No abstract text available Text: 2N3766 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a	Original	PDF	2N3766 O213AA) 30-Jul-02
Untitled Abstract: No abstract text available Text: 2N3766+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2N3766 Freq10M
2N5428 Abstract: No abstract text available Text: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912	Original	PDF	2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420 2N6421 2N5428
2N3766SMD Abstract: 2n3766 Text: 2N3766SMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed	Original	PDF	2N3766SMD O276AB) 15-Aug-02 2N3766SMD 2n3766

Untitled Abstract: No abstract text available Text: 2N3766+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2N3766 Freq10M
STRS6307 Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020 Text: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173	Original	PDF	2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766 2N4273 2N4909 2N3055 2N3767 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
2n3767 Abstract: 2N3766 transistor 2N3766 TO-66 CASE TRANSISTOR TO-66 Text: Central 2N3766 2N3767 NPN SILICON POWER TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3766, 2N3767 types are silicon NPN power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications.	Original	PDF	2N3766 2N3767 2N3766, 2N3767 100mA 2N3766) 2N3767) 2N3766 transistor 2N3766 TO-66 CASE TRANSISTOR TO-66
Untitled Abstract: No abstract text available Text: COLLECTOR CURRENT = 2 AMPS NPN TYPES 2N1720 2N1889 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992 2N2993 2N2994 2N3665 2N3666 2N3766 2N3767 2N3917 2N3918 2N4000 2N4001 2N4237 2N4238 2N4239 2N4240 2N4862 2N4863 2N4864 2N4910 2N4911 2N4912 2N5050	OCR Scan	PDF	2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2N1718 2N1719
2N3806 2N3906 Abstract: 2N3907 2N3904DCSM 2N2222ADCSM hirel bfy81 2N2640DCSM 2N3904D Text: 37E S E M E L A B LTD 5133167 □□□□□17 T> fl ISMLB 7 Type No. Reliability Polarity Option 2N3763 2N3764 2N3765 2N3766 2N3767 HI-REL HI-REL HI-REL HI-REL HI-REL PNP PNP PNP NPN NPN 2N3771 2N3772 2N3773 2N3782 2N3789 SCREEN SCREEN SCREEN SCREEN CECC ^	OCR Scan	PDF	2N3763 2N3764 2N3765 2N3766 2N3767 2N3771 2N3772 2N3773 2N3782 2N3789 2N3806 2N3906 2N3907 2N3904DCSM 2N2222ADCSM hirel bfy81 2N2640DCSM 2N3904D
Untitled Abstract: No abstract text available Text: General Transistor Corporation CASE TO-66 lc MAX = 1-5A VcEO(SUS) • 40-425V PNP Power Transistors NPN Typ. No. 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 coinplMMnl 2N3766 2N3767 2N4910 2N4911 2N4912 (A) VCE(SAT) 0IC/IB (V0A/A) VBE IOVCE	OCR Scan	PDF	0-425V 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 2N3766
2N3766 MOTOROLA Abstract: 2N3766 2N3741 MOTOROLA 2n3767 motorola 2N3767 2N3741 2h37 2N3740 motorola motorola 2n3766 Text: MOTORCLA SC XST R S/R F - 0 9 12E D \| t.3b?2Si\| □ 0 â 4 4 û c! 1 \| MOTOROLA 2N3766 2N3767 SEMICONDUCTOR TECHNICAL DATA M E D IU M - P O W E R N P N S IL IC O N T R A N S I S T O R S . . . fo r use in driver circuits, switching, and m e d iu m -p o w e r-am p lifie rs applica	OCR Scan	PDF	2N3766 2N3767 O-213AA 2N3740 2N3766) 2N3741 2N3767) 2N3766 MOTOROLA 2N3741 MOTOROLA 2n3767 motorola 2N3767 2N3741 2h37 2N3740 motorola motorola 2n3766
2N3740 Abstract: 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4898 2N4899 2N4910 2N4911 Text: NE III ENGLAND SEMI CONDUCT OR 5TE bSbHTTa D = 1-5À VCEO SUS = 4 0 -4 2 5 V fT = 3-10 M H z □□□□□SO lc ( M A X ) Type No. 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N4898 2N4899 2N4900 2N5344 2N4910 2N4911 2N4912 2N3767 VCEQ (SUS) (V) 1C (MAX) (A) 60	OCR Scan	PDF	0-425V 2N3740 2N3766 2N3740A 2N3741 2N3767 2N3741A 2N4898 2N4910 2N1483 2N3740A 2N3741A 2N4899 2N4911
Untitled Abstract: No abstract text available Text: 0CH3592 A P I A P I ELECTRONICS ELECTRONICS INC 26C I NC EL, D 7^-3 00218 DE \| DOMBSTS 3-b I ß COLLECTOR CURRENT = 2 AMPS NPN TYPES - CONTINUED Device No 2N2991 2N2992 2N2993 2N2994 2N3665 •2N3666 2N3766 2N3767 2N3917 2N3918 2N4000 2N4001 2N4237 2N4238	OCR Scan	PDF	0CH3592 2N2991 2N2992 2N2993 2N2994 2N3665 2N3666 2N3766 2N3767 2N3917
MC 151 pnp Abstract: 05Z5 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4698 2N4900 Text: General Transistor Corporation CASE TO-66 lc MAX = 1-5A VcEO(SUS) « 40-425V PNP Power Transistors NFN Typ* No. comptait«»! 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N4898 2N4699 2N4900 2N5344 2N3767 2N4910 2N4911 2N4912 VCE(SAT) 0IC/IB (V0A/A) VCEO <»»>	OCR Scan	PDF	0-425V 2N3740 2N3766 2N3740A 2N3741 2N3767 2N3741A 2N4698 2N4910 2N2853 MC 151 pnp 05Z5 2N3740A 2N3741A 2N4900

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2N3766 Price and Stock

Microchip Technology Inc 2N3766

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2N3766 Datasheets (53)

2N3766 Datasheets Context Search

2N3766

2N3766

2N3766

2N3738 equivalent

2N3767

Untitled

2N3766SMD05

2N4001 diode

900NT

Untitled

Untitled

Untitled

2N5428

2N3766SMD

Untitled

STRS6307

2n3767

Untitled

2N3806 2N3906

Untitled

2N3766 MOTOROLA

2N3740

Untitled

MC 151 pnp